Randy Wayne Cotton, 6317132 Ardisia Dr, Pflugerville, TX 78660

7544575, Jun 9, 2009

Jan 19, 2006

11/337036

Olubunmi O. Adetutu - Austin TX, US
Dharmesh Jawarani - Round Rock TX, US
Randy W. Cotton - Pflugerville TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/336

438299, 438592, 438664, 257E21438

A semiconductor process and apparatus provide a polysilicon structure () and source/drain regions () formed adjacent thereto in which a dual silicide scheme is used to form first silicide regions in the polysilicon, source and drain regions () using a first metal (e. g. , cobalt). After forming sidewall spacers (), a second metal (e. g. , nickel) is used to form second silicide regions in the polysilicon, source and drain regions () to reduce encroachment by the second silicide in the source/drain () and to reduce resistance in the polysilicon structure caused by agglomeration and voiding from the first silicide ().

2006006, Mar 23, 2006

Sep 22, 2004

10/946938

Dina Triyoso - Austin TX, US
Olubunmi Adetutu - Austin TX, US
Randy Cotton - Pflugerville TX, US

H01L 21/336

438287000

A method for forming a semiconductor device () creates a dielectric layer () with high dielectric constant. An interfacial layer () is formed over a semiconductor substrate (). A dielectric layer () is formed over the interfacial layer, wherein the dielectric layer has a high dielectric constant (K). The dielectric layer is thinned, such as by etching or chemical mechanical polishing, wherein a thickness of the thinned dielectric layer is less than a thickness of the dielectric layer prior to thinning. In one form, the method is used to form a transistor having a gate electrode layer formed over the thinned dielectric layer and source/drain diffusions () within the semiconductor substrate.