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Richard L Knipe, 644101 County Road 1006, Mckinney, TX 75071

Richard Knipe Phones & Addresses

4101 County Road 1006, Mc Kinney, TX 75069    972-5489536   

McKinney, TX   

Breckenridge, CO   

Stillwater, OK   

Gallatin, TN   

Santa Clara, CA   

Goodlettsville, TN   

4101 County Road 1006, Mc Kinney, TX 75071    214-2633801   

Work

Position: Sales Occupations

Education

Degree: High school graduate or higher

Mentions for Richard L Knipe

Career records & work history

Medicine Doctors

Richard A. Knipe

Specialties:
Hematology/Oncology
Work:
Florida Cancer Specialists & Research InstituteFlorida Cancer Specialists
1201 5 Ave N STE 505, Saint Petersburg, FL 33705
727-8210017 (phone) 727-8227473 (fax)
Site
Florida Cancer Specialists & Research InstituteFlorida Cancer Specialists
1615 Pasadena Ave S STE 400, Saint Petersburg, FL 33707
727-3411316 (phone) 727-8227473 (fax)
Site
Education:
Medical School
University of Florida College of Medicine at Gainesville
Graduated: 1989
Procedures:
Chemotherapy
Conditions:
Anemia, Iron Deficiency Anemia, Malignant Neoplasm of Female Breast, Bladder Cancer, Breast Neoplasm, Malignant, Cervical Cancer, Gastric Cancer, Hemolytic Anemia, Hodgkin's Lymphoma, Kidney Cancer, Laryngeal Cancer, Leukemia, Liver Cancer, Lung Cancer, Malignant Neoplasm of Colon, Malignant Neoplasm of Esophagus, Melanoma, Multiple Myeloma, Non-Hodgkin's Lymphoma, Ovarian Cancer, Pancreatic Cancer, Prostate Cancer, Rectal, Abdomen, Small Intestines, or Colon Cancer, Sickle-Cell Disease, Testicular Cancer, Thyroid Cancer, Uterine Cancer, Vitamin B12 Deficiency Anemia
Languages:
English, Spanish, Vietnamese
Description:
Dr. Knipe graduated from the University of Florida College of Medicine at Gainesville in 1989. He works in Saint Petersburg, FL and 1 other location and specializes in Hematology/Oncology. Dr. Knipe is affiliated with Bayfront Health St Petersburg, Palms Of Pasadena Hospital and St Anthonys Hospital.

Richard Knipe resumes & CV records

Resumes

Richard Knipe Photo 20

Richard Knipe

Richard Knipe Photo 21

Cto At Cavendish Kinetics

Position:
VP Engineering, CTO at Cavendish Kinetics
Location:
Dallas/Fort Worth Area
Industry:
Semiconductors
Work:
Cavendish Kinetics since Jun 2007
VP Engineering, CTO
Texas Instruments Mar 2004 - Jun 2007
Emerging MEMS markets
Texas Instruments Feb 2001 - Mar 2004
Optical networking business manager
Texas Instruments Aug 1991 - Jan 2001
DLP Technology Development Manager
Texas Instruments 1989 - 1991
Applied Mechanics
Texas Instruments Aug 1985 - Aug 1989
Antenna Design
Education:
The University of Texas at Arlington 1987 - 1993
PhD, Mechanical Engineering
Oklahoma State University
BSME
The University of Texas at Arlington
Doctor of Philosophy (PhD)
Richard Knipe Photo 22

Richard Knipe

Location:
United States
Richard Knipe Photo 23

Richard Knipe

Location:
United States

Publications & IP owners

Us Patents

Electrostatic Efficiency Of Micromechanical Devices

US Patent:
6552840, Apr 22, 2003
Filed:
Nov 30, 2000
Appl. No.:
09/726861
Inventors:
Richard L. Knipe - McKinney TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 2600
US Classification:
359291, 359292, 359295, 359223, 359224
Abstract:
An improved micromechanical device, particularly a micromirror device having improved electrostatic efficiency. A deflectable member comprised of a mirror and an active hinge yoke is suspended address and landing electrodes on a substrate and above upper address electrodes supported above the substrate The deflectable member is operable to rotate about a torsion hinge axis in response to an electrostatic force between the address electrodes and the deflectable member. The upper address electrodes have a stair stepped shape to narrow a gap between the deflectable member and the upper address electeodes. The gap is narrower near the axis of rotation compared to away from the axis. The stair stepped shape is achieved by embedding a portion of an oxide layer between a thin metal layer making up the upper address electrodes the active hinge yoke and the torsion hinges, and a thick metal layer making up the upper address electrodes and the active hinge yoke.

Memory Architecture For Micromirror Cell

US Patent:
6775174, Aug 10, 2004
Filed:
Dec 28, 2001
Appl. No.:
10/034896
Inventors:
James D. Huffman - Richardson TX
Larry J. Hornbeck - Van Alstyne TX
Richard L. Knipe - McKinney TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G11C 1124
US Classification:
365149, 365237, 365106
Abstract:
A one transistor one capacitor micromirror with DRAM memory cell built around a large polysilicon-to-substrate capacitor which is not susceptible to recombination of photo-generated carriers caused by illumination in the projector. This large polysilicon-to-substrate capacitor overshadows the much smaller inherent parallel depletion capacitance which is sensitive to light. The device is further 100% shielded from exposed light by metal layers and the address node is located under the center of the micromirror mirror to obtain maximum shielding of light for the smaller, light sensitive, depletion portion of the capacitance. As a result the micromirror of this invention can adequately hold the cell charge in excess of the device load time of 300 Sec even in extremely high brightness projector applications. This invention also provides a feature which automatically forces micromirror mirrors located over bad CMOS memory cell to the dark state, which is much less objectionable in most applications, thereby improving the overall effective processing yield.

Capacitively Coupled Micromirror

US Patent:
6906850, Jun 14, 2005
Filed:
Dec 21, 2001
Appl. No.:
10/027873
Inventors:
Richard L. Knipe - McKinney TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B026/00
G02B026/08
G09G003/34
US Classification:
359295, 359224, 345 85
Abstract:
A capacitively coupled microelectromechanical device comprising: a semiconductor substrate; a member operable to deflect to either of at least two states; and a switch for selectively connecting the member to a voltage signal. When a logic high signal is stored on memory capacitor, mirror transistor is turned on, grounding the mirror structure. When a logic low signal is stored on the memory capacitor, the mirror transistor is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.

Mems Device Wafer-Level Package

US Patent:
6908791, Jun 21, 2005
Filed:
Apr 29, 2002
Appl. No.:
10/135559
Inventors:
Thomas A. Kocian - Dallas TX, US
Richard L. Knipe - McKinney TX, US
Mark H. Strumpell - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L021/48
H01L021/50
US Classification:
438110, 438116, 438118
Abstract:
A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.

Yokeless Hidden Hinge Digital Micromirror Device

US Patent:
7011415, Mar 14, 2006
Filed:
Nov 18, 2002
Appl. No.:
10/298423
Inventors:
Anthony DiCarlo - Richardson TX, US
Patrick I. Oden - McKinney TX, US
Richard L. Knipe - McKinney TX, US
Rabah Mezenner - Richardson TX, US
James D. Huffman - Cambridge, GB
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 26/00
US Classification:
353 99, 359291, 359295, 359846, 347239
Abstract:
A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.

Capacitively Coupled Micromirror

US Patent:
7119940, Oct 10, 2006
Filed:
Jun 14, 2005
Appl. No.:
11/152794
Inventors:
Richard L. Knipe - McKinney TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 26/00
G09G 3/34
US Classification:
359290, 359295, 345 85
Abstract:
A capacitively coupled microelectromechanical device and method of operation. The micromechanical device comprises: a semiconductor substrate; a member operable to deflect about a torsion axis to either of at least two states; and a switch driven for selectively connecting the member to a voltage signal. When a logic high signal is stored on the memory capacitor , the mirror transistor is turned on, grounding the mirror structure. When a logic low signal is stored on the memory capacitor , the mirror transistor is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.

Mems Device Wafer-Level Package

US Patent:
7226810, Jun 5, 2007
Filed:
Jun 20, 2005
Appl. No.:
11/157024
Inventors:
Thomas A. Kocian - Dallas TX, US
Richard L. Knipe - McKinney TX, US
Mark H. Strumpell - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/50
H01L 21/46
US Classification:
438110, 438113, 438460, 257E21499
Abstract:
A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.

Mems Device Deflection Stop

US Patent:
7252395, Aug 7, 2007
Filed:
Mar 10, 2006
Appl. No.:
11/372686
Inventors:
Anthony DiCarlo - Richardson TX, US
Patrick I. Oden - McKinney TX, US
Richard L. Knipe - McKinney TX, US
Rabah Mezenner - Richardson TX, US
James D. Huffman - Cambridge, GB
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 26/00
US Classification:
353 99, 359291, 359295, 359846, 348771
Abstract:
A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.

Public records

Vehicle Records

Richard Knipe

Address:
4101 County Rd 1006, McKinney, TX 75071
VIN:
1HD1CX3197K424525
Make:
Cadillac
Model:
Escalade ESV AWD 4dr
Year:
2007

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