Richard Southwick resumes & CV records
Resumes
Richard Southwick
Richard Southwick
Richard G Southwick, 443 New Netherland Way, Halfmoon, NY 12065
Richard Southwick Phones & Addresses
3 New Netherland Way, Clifton Park, NY 12065 518-6522113
Halfmoon, NY
Glens Falls, NY
10433 Carlyn Ridge Rd, Damascus, MD 20872 301-2534814
Boise, ID
Horseshoe Bend, ID
Briggsdale, CO
Mentions for Richard G Southwick
Publications & IP owners
Us Patents
Dual Channel Silicon/Silicon Germanium Complementary Metal Oxide Semiconductor Performance With Interface Engineering
US Patent:
2019022, Jul 25, 2019
Filed:
Apr 1, 2019
Appl. No.:
16/371621
Inventors:
- Armonk NY, US
Hemanth Jagannathan - Niskayuna NY, US
Choonghyun Lee - Rensselaer NY, US
Richard G. Southwick - Albany NY, US
Hemanth Jagannathan - Niskayuna NY, US
Choonghyun Lee - Rensselaer NY, US
Richard G. Southwick - Albany NY, US
International Classification:
H01L 21/8238
H01L 29/10
H01L 29/66
H01L 21/324
H01L 29/10
H01L 29/66
H01L 21/324
Abstract:
A method of forming fin structures that includes providing at least one silicon germanium containing fin structure, and forming a fin liner on the at least one silicon germanium containing fin structure. The fin liner includes a silicon germanium and oxygen containing layer. The method continues with annealing the at least on silicon germanium containing fin structure having the fin liner present thereon. During the annealing, the silicon germanium oxygen containing layer reacts with the silicon germanium containing fin structure to provide surface formation of a silicon rich layer on the silicon germanium containing fin structure.
Dual Channel Silicon/Silicon Germanium Complementary Metal Oxide Semiconductor Performance With Interface Engineering
US Patent:
2018031, Nov 1, 2018
Filed:
Apr 26, 2017
Appl. No.:
15/497817
Inventors:
- Armonk NY, US
Hemanth Jagannathan - Niskayuna NY, US
Choonghyun Lee - Rensselaer NY, US
Richard G. Southwick - Albany NY, US
Hemanth Jagannathan - Niskayuna NY, US
Choonghyun Lee - Rensselaer NY, US
Richard G. Southwick - Albany NY, US
International Classification:
H01L 21/8238
H01L 29/66
H01L 29/165
H01L 21/324
H01L 21/02
H01L 21/311
H01L 29/66
H01L 29/165
H01L 21/324
H01L 21/02
H01L 21/311
Abstract:
A method of forming fin structures that includes providing at least one silicon germanium containing fin structure, and forming a fin liner on the at least one silicon germanium containing fin structure. The fin liner includes a silicon germanium and oxygen containing layer. The method continues with annealing the at least on silicon germanium containing fin structure having the fin liner present thereon. During the annealing, the silicon germanium oxygen containing layer reacts with the silicon germanium containing fin structure to provide surface formation of a silicon rich layer on the silicon germanium containing fin structure.
Isbn (Books And Publications)
Search Inference And Dependencies In Artificial Intelligence
Author:
Richard Southwick
ISBN #:
0137968892
Search Inference And Dependencies In Artificial Intelligence
Author:
Richard Southwick
ISBN #:
0470216182
Search, Inference And Dependencies In Artificial Intelligence
Author:
Richard Southwick
ISBN #:
0745804888
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