Robert A Rizzuto, 581 Shawnee Rd, Worcester, MA 01606
Robert Rizzuto Phones & Addresses
1 Shawnee Rd, Worcester, MA 01606 508-8536088
18 Tyson Rd, Worcester, MA 01606 508-8536088
West Boylston, MA
Mentions for Robert A Rizzuto
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Us Patents
Sapphire Substrates And Methods Of Making Same
US Patent:
7956356, Jun 7, 2011
Filed:
Dec 21, 2007
Appl. No.:
11/963369
Inventors:
Brahmanandam V. Tanikella - Northboro MA, US
Matthew A. Simpson - Sudbury MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Sudbury MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
H01L 29/10
US Classification:
257 43, 257E291
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0. 037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9. 0 cm.
Sapphire Substrates And Methods Of Making Same
US Patent:
8197303, Jun 12, 2012
Filed:
Dec 21, 2007
Appl. No.:
11/963454
Inventors:
Brahmanandam V. Tanikella - Northboro MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
B24B 1/00
US Classification:
451 41, 451 63
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0. 037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9. 0 cm.
Sapphire Substrates And Methods Of Making Same
US Patent:
8455879, Jun 4, 2013
Filed:
Dec 21, 2007
Appl. No.:
11/963420
Inventors:
Brahmanandam V. Tanikella - Northboro MA, US
Matthew A. Simpson - Sudbury MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Sudbury MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Ramanujam Vedantham - Worcester MA, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
H01L 29/15
US Classification:
257 76, 257190, 428329, 428332
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0. 037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9. 0 cm.
Sapphire Substrates And Methods Of Making Same
US Patent:
2012028, Nov 15, 2012
Filed:
May 15, 2012
Appl. No.:
13/472179
Inventors:
Brahmanandam V. Tanikella - Northboro MA, US
Palaniappan Chinnakaruppan - West Carrollton OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Palaniappan Chinnakaruppan - West Carrollton OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Assignee:
SAINT-GOBAIN CERAMICS & PLASTICS, INC. - Worcester MA
International Classification:
B24B 1/00
US Classification:
451 41
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Spinel Wafers And Methods Of Preparation
US Patent:
7919815, Apr 5, 2011
Filed:
Mar 1, 2006
Appl. No.:
11/365465
Inventors:
Brahmanandam Tanikella - Northboro MA, US
Elizabeth Thomas - Southington OH, US
Frank L. Csillag - Hopkinton MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Jadwiga Jaroniec - Stow OH, US
Eric Virey - Portland OR, US
Robert A. Rizzuto - Worcester MA, US
Elizabeth Thomas - Southington OH, US
Frank L. Csillag - Hopkinton MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Jadwiga Jaroniec - Stow OH, US
Eric Virey - Portland OR, US
Robert A. Rizzuto - Worcester MA, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
H01L 27/01
H01L 27/12
H01L 31/0392
H01L 23/58
H01L 27/12
H01L 31/0392
H01L 23/58
US Classification:
257352, 257629, 257631, 257E21121, 438974
Abstract:
Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise α-AlOand an organic phosphate.
Sapphire Substrate
US Patent:
2014033, Nov 13, 2014
Filed:
Jul 25, 2014
Appl. No.:
14/340820
Inventors:
- Worcester MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Evergreen CO, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Evergreen CO, US
International Classification:
C30B 29/20
H01L 23/15
H01L 23/15
US Classification:
428141
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Sapphire Substrate
US Patent:
2014023, Aug 21, 2014
Filed:
Feb 6, 2014
Appl. No.:
14/174602
Inventors:
- Worcester MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Evergreen CO, US
Palaniappan Chinnakaruppan - Springboro OH, US
Robert A. Rizzuto - Worcester MA, US
Isaac K. Cherian - Shrewsbury MA, US
Ramanujam Vedantham - Worcester MA, US
Matthew A. Simpson - Evergreen CO, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
H01L 21/02
US Classification:
428 641
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Modified Microgrinding Process
US Patent:
2014009, Apr 3, 2014
Filed:
Sep 18, 2013
Appl. No.:
14/030843
Inventors:
Robert A. Rizzuto - Worcester MA, US
Ajay Krishnan - Westford MA, US
Christopher Arcona - Northborough MA, US
Anand Tanikella - Northborough MA, US
Ajay Krishnan - Westford MA, US
Christopher Arcona - Northborough MA, US
Anand Tanikella - Northborough MA, US
International Classification:
B24B 7/22
US Classification:
451 41
Abstract:
A method of forming a substrate is performed by grinding a substrate using abrasives so that both major surfaces of the substrate achieve desired flatness, smoothness, or both. In an embodiment, a coarser abrasive is used to grind one major surface, while a finer abrasive is simultaneously used to grind the other major surface. A single grinding step can used to produce a substrate having opposing surfaces of different surface roughnesses. This may help to eliminate a typical second downstream fine polishing step used in the prior art. Embodiments can be used with a wide variety of substrates, including sapphire, silicon carbide and gallium nitride single crystal structures grown by various techniques.
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