Roman Svetlana Shuba, 401187 Hillside Ave, Schenectady, NY 12309
Roman Shuba Phones & Addresses
1187 Hillside Ave, Schenectady, NY 12309
Niskayuna, NY
250 Beverly Blvd, Upper Darby, PA 19082
32 Earle Dr, Lee, NH 03861
Durham, NH
Albany, CA
Philadelphia, PA
Mentions for Roman Svetlana Shuba
Publications & IP owners
Us Patents
Treated Refractory Material And Methods Of Making
US Patent:
8105683, Jan 31, 2012
Filed:
Mar 7, 2007
Appl. No.:
11/683260
Inventors:
Anthony Mark Thompson - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Peter Joel Meschter - Niskayuna NY, US
Krishan Lal Luthra - Niskayuna NY, US
Vikas Behrani - Atlanta GA, US
Roman Shuba - Niskayuna NY, US
Peter Joel Meschter - Niskayuna NY, US
Krishan Lal Luthra - Niskayuna NY, US
Vikas Behrani - Atlanta GA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
C21B 7/06
US Classification:
4283077, 427140, 427226, 427314, 427229, 75330, 75301, 428701, 4283044
Abstract:
A treated refractory material includes a sintered porous refractory material having one or more protective materials disposed within pores of the refractory material, wherein the protective material is selected from the group consisting of aluminum oxide, chromium oxide, silica, rare earth oxides, rare earth zirconates, titanium oxide, mullite, zirconium oxide, zirconium silicate, yttrium oxide, magnesium oxide, iron oxide, and blends thereof. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory.
Refractory Material With Improved Resistance To Molten Slag
US Patent:
8481152, Jul 9, 2013
Filed:
Aug 14, 2008
Appl. No.:
12/191863
Inventors:
Roman Shuba - Niskayuna NY, US
Wei Chen - Sugar Land TX, US
Anthony Mark Thompson - Aliso Viejo CA, US
Wei Chen - Sugar Land TX, US
Anthony Mark Thompson - Aliso Viejo CA, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
B32B 5/18
B32B 18/00
B32B 18/00
US Classification:
4283055, 4283216, 4283179, 4283191, 4283202, 428432, 428697, 428702, 428472, 501103, 501127, 501132
Abstract:
A treated refractory material includes a porous refractory material having one or more protective materials disposed within pores of the refractory material. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory material.
Methods For Forming Back Contact Electrodes For Cadmium Telluride Photovoltaic Cells
US Patent:
8524524, Sep 3, 2013
Filed:
Apr 22, 2010
Appl. No.:
12/765225
Inventors:
Bastiaan Arie Korevaar - Schenectady NY, US
Juan Carlos Rojo - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Juan Carlos Rojo - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01L 21/00
US Classification:
438 98, 438 84, 438 95, 136260, 136264
Abstract:
A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
Method For The Preparation Of High Purity Silicon
US Patent:
2008031, Dec 25, 2008
Filed:
Jun 25, 2007
Appl. No.:
11/767951
Inventors:
Thomas Francis McNulty - Ballston Lake NY, US
John Thomas Leman - Niskayuna NY, US
Larry Neil Lewis - Scotia NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Victor Lienkong Lou - Schenectady NY, US
Roman Shuba - Niskayuna NY, US
Kenrick Martin Lewis - Flushing NY, US
Frank Dominic Mendicino - Marietta OH, US
Johan Heinrich van Dongeren - Odenthal, DE
John Thomas Leman - Niskayuna NY, US
Larry Neil Lewis - Scotia NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Victor Lienkong Lou - Schenectady NY, US
Roman Shuba - Niskayuna NY, US
Kenrick Martin Lewis - Flushing NY, US
Frank Dominic Mendicino - Marietta OH, US
Johan Heinrich van Dongeren - Odenthal, DE
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
H01L 31/00
C01B 33/021
C01B 33/021
US Classification:
136261, 423349
Abstract:
A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550 C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Processes For The Preparation Of Solar-Grade Silicon And Photovoltaic Cells
US Patent:
2008031, Dec 25, 2008
Filed:
Jun 25, 2007
Appl. No.:
11/767957
Inventors:
Thomas Francis McNulty - Ballston Lake NY, US
John Thomas Leman - Niskayuna NY, US
Larry Neil Lewis - Scotia NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Victor Lienkong Lou - Schenectady NY, US
Roman Shuba - Niskayuna NY, US
John Thomas Leman - Niskayuna NY, US
Larry Neil Lewis - Scotia NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Victor Lienkong Lou - Schenectady NY, US
Roman Shuba - Niskayuna NY, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
H01L 31/00
C01B 33/021
C01B 33/021
US Classification:
136261, 423349
Abstract:
A process for the manufacture of high-purity elemental silicon is described. The process includes the step of preparing a silica gel composition by reacting at least one organosilane compound with an aqueous composition, so as to form granules of the silica gel. A hydrocarbon species is then decomposed by way of a hydrocarbon cracking reaction in the presence of the silica gel composition, so that carbon resulting from the decomposition of the hydrocarbon species is deposited on the granules of the gel composition. Heating of the carbon-containing silica gel composition to an elevated temperature produces the elemental silicon product. Related methods for making photovoltaic cells, using the elemental silicon, are also described.
System And Method For Producing Solar Grade Silicon
US Patent:
2009007, Mar 19, 2009
Filed:
Sep 14, 2007
Appl. No.:
11/855233
Inventors:
Thomas Francis McNulty - Ballston Lake NY, US
Bruce Gordon Norman - Charlton NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Bruce Gordon Norman - Charlton NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Assignee:
GENERAL ELECTRIC COMPANY - SCHENECTADY NY
International Classification:
C01B 33/025
F02C 1/05
F02C 1/05
US Classification:
423349, 60772
Abstract:
A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power.
Treated Refractory Material And Methods Of Making
US Patent:
2009018, Jul 30, 2009
Filed:
Jan 26, 2009
Appl. No.:
12/359560
Inventors:
Wade Albert Taber - Katy TX, US
Wei Chen - Sugar Land TX, US
Peter Joel Meschter - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Wei Chen - Sugar Land TX, US
Peter Joel Meschter - Niskayuna NY, US
Roman Shuba - Niskayuna NY, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
C21B 7/06
US Classification:
75301, 75330
Abstract:
A treated refractory material includes a refractory material having a plurality of pores, wherein the refractory material comprises aluminum oxide, silicon oxide, magnesium oxide, chromium oxide, zirconium oxide, titanium oxide, calcium oxide, fireclay, silicon carbide, tungsten, mullite, dolomite, magnesite, magnesium aluminum oxide, chromite, magnetite, or a combination comprising at least one of the foregoing; and a protective material disposed within the plurality of pores of the refractory material, wherein the protective material is selected from the group consisting of aluminum oxide, chromium oxide, silica, rare earth oxides, rare earth zirconates, titanium oxide, mullite, zirconium oxide, zirconium silicate, yttrium oxide, magnesium oxide, iron oxide, and blends thereof.
Method For Deposition
US Patent:
2013010, May 2, 2013
Filed:
Oct 31, 2011
Appl. No.:
13/285501
Inventors:
Bastiaan Arie Korevaar - Schenectady NY, US
Roman Shuba - Albany CA, US
Roman Shuba - Albany CA, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
C23C 16/22
C23C 14/34
C23C 16/448
C23C 14/34
C23C 16/448
US Classification:
427255395, 118715, 2041921
Abstract:
Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.
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