Ruben B Montez, 642704 Cashell Wood Cv, Cedar Park, TX 78613

8058143, Nov 15, 2011

Jan 21, 2009

12/356939

Ruben B. Montez - Cedar Park TX, US
Alex P. Pamatat - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/30
H01L 21/46

438456, 438119, 438117, 257E21122, 257E21129, 257E21496

A method that in one embodiment is useful in bonding a first substrate to a second substrate includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate is formed a first layer comprising silicon. A second layer comprising germanium and silicon is formed on the first layer. A third layer comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.

8455286, Jun 4, 2013

Oct 29, 2010

12/916395

Lisa H. Karlin - Chandler AZ, US
David W. Kierst - Austin TX, US
Lianjun Liu - Chandler AZ, US
Wei Liu - Chandler AZ, US
Ruben B. Montez - Cedar Park TX, US
Robert F. Steimle - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/00

438 50, 438 48, 438 51, 438107, 257E21215, 257E29324

A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form a structure having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer to form the movable portion of the MEMS device.

8592926, Nov 26, 2013

Oct 14, 2011

13/273389

Ruben B. Montez - Cedar Park TX, US
Alex P. Pamatat - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/50
H01L 23/10
B81C 1/00

257417, 257704, 257782, 438 51, 438 52, 438118

In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.

8633088, Jan 21, 2014

Apr 30, 2012

13/460020

Ruben B Montez - Cedar Park TX, US
Robert F Steimle - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/30
H01L 21/00
H01L 21/46
H01L 23/06

438456, 438 52, 438 53, 438455, 257684

A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.

2010015, Jun 24, 2010

Dec 19, 2008

12/340202

Lisa Z. Zhang - Gilbert AZ, US
Lisa H. Karlin - Chandler AZ, US
Ruben B. Montez - Cedar Park TX, US
Woo Tae Park - Chandler AZ, US

Freescale Semiconductor, Inc. - Austin TX

H01L 29/84
H01L 21/762

257415, 438424, 257E21545, 257E29324

A microelectromechanical systems (MEMS) device () includes a polysilicon structural layer () having movable microstructures () formed therein and suspended above a substrate (). Isolation trenches () extend through the layer () such that the microstructures () are laterally anchored to the isolation trenches (). A sacrificial layer () is formed overlying the substrate (), and the structural layer () is formed overlying the sacrificial layer (). The isolation trenches () are formed by etching through the polysilicon structural layer () and depositing a nitride (), such as silicon-rich nitride, in the trenches (). The microstructures () are then formed in the structural layer (), and electrical connections () are formed over the isolation trenches (). The sacrificial layer () is subsequently removed to form the MEMS device () having the isolated microstructures () spaced apart from the substrate ().

2016031, Oct 27, 2016

Apr 27, 2015

14/697081

- Austin TX, US
Aaron A. GEISBERGER - Austin TX, US
Jeffrey D. HANNA - Spicewood TX, US
Ruben B. MONTEZ - Cedar Park TX, US

B81B 3/00
B81C 1/00

A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.

2016027, Sep 22, 2016

Mar 16, 2015

14/658598

- AUSTIN TX, US
FENGYUAN LI - CHANDLER AZ, US
RUBEN B. MONTEZ - CEDAR PARK TX, US
COLIN B. STEVENS - AUSTIN TX, US

B81B 3/00
B81C 1/00

A microelectromechanical systems (MEMS) die includes a substrate having a first substrate layer, a second substrate layer, and an insulator layer interposed between the first and second substrate layers. A structure is formed in the first substrate layer and includes a platform upon which a MEMS device resides. Fabrication methodology entails forming the MEMS device on a front side of the first substrate layer of the substrate, forming openings extending through the second substrate layer from a back side of the second substrate layer to the insulator layer, and forming a trench in the first substrate layer extending from the front side to the insulator layer. The trench is laterally offset from the openings. The trench surrounds the MEMS device to produce the structure in the first substrate layer on which the MEMS device resides. The insulator layer is removed underlying the structure to suspend the structure.

2016016, Jun 16, 2016

Feb 23, 2016

15/051264

- Austin TX, US
Ruben B. Montez - Cedar Park TX, US

B81B 3/00
B81C 1/00

A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.