Inventors:
- Midland MI, US
- Marlborough MA, US
Huaxing Zhou - Furlong PA, US
Jong Keun Park - Shrewsbury MA, US
Phillip D. Hustad - Natick MA, US
Jin Wuk Sung - Northborough MA, US
International Classification:
G03F 7/40
G03F 7/38
G03F 7/32
G03F 7/20
Abstract:
Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
