Shahid I Butt1303 Avenue Z UNIT 2, Brooklyn, NY 11235

6566219, May 20, 2003

Sep 21, 2001

09/957937

Gerhard Kunkel - Radebeul, DE
Shahid Butt - Ossining NY
Ramachandra Divakaruni - Ossining NY
Armin M. Reith - Muenchen, DE
Munir D. Naeem - Poughkeepsie NY

Infineon Technologies AG - Munich

H01L 21475

438386, 438763, 438764, 438787

A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e. g. , polysilicon) is formed over a semiconductor region (e. g. , a silicon substrate). The first layer is patterned to remove portions of the first material. A second material (e. g. , oxide) can then be deposited to fill the portions where the first material was removed. After removing the remaining portions of the first layer of first material, a trench can be etched in the semiconductor region. The trench would be substantially aligned to the second material.

6571383, May 27, 2003

Apr 28, 2000

09/562700

Shahid Butt - Ossining NY
Henning Haffner - Dresden, DE
Beate Frankowsky - Munich, DE

Infineon Technologies, AG - Munich

G06F 1750

716 19, 716 4, 430 30, 382149

A method of fabricating a semiconductor device is outlined in FIG. . An ideal (or desired) pattern of a layer of the semiconductor device is designed ( ). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e. g. , aerial image effects ( ). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors ( ). The second pass corrected pattern can be used to build a photomask ( ). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip ( ).

6590657, Jul 8, 2003

Sep 29, 1999

09/408246

Christian Summerer - Munich, DE
Shahid Butt - Ossining NY
Gerhard Kunkel - Fishkill NY
Uwe Paul Schroeder - Fishkill NY

Infineon Technologies North America Corp. - Cupertino CA

G01B 1100

356401, 430322

A semiconductor body having an alignment mark comprising a material adapted to absorb impinging light and to radiate light in response to the absorption of the impinging light, such radiated light being radiated with a wavelength different from the wavelength of the impinging light. Also a method and apparatus for detecting an alignment mark on a semiconductor body. The method and apparatus successively scan an alignment illumination comprising the impinging light over the surface of the semiconductor surface and over the alignment mark. The impinging energy is reflected by the surface of the semiconductor when such impinging light is over and is reflected by the surface of the semiconductor. The impinging energy is absorbed by the material and is then radiated by the material when such impinging energy is scanned over such material. The reflected light is selectively filtered while the radiated light is passed to a detector.

6606151, Aug 12, 2003

Jul 27, 2001

09/916917

Gerhard Kunkel - Radebeul, DE
Shahid Butt - Ossining NY
Joseph Kirk - Chelsea NY

Infineon Technologies AG - Munich
International Business Machines Corporation - Armonk NY

G01B 900

356124, 359575, 356515

Methods and reticles for evaluating lenses are disclosed. In one instance, a reticle which permits light to pass therethrough is provided which includes a first surface with a grating profile formed thereon. The grating profile includes a plurality of grouped stepped portions. Each group of the stepped portions includes a first step which prevents light from propagating therethrough, a second step which propagates light therethrough and a third step which propagates light therethrough at an angle 60 degrees out of phase with the light propagated through the second step.

6842222, Jan 11, 2005

Apr 4, 2003

10/406888

Gerhard Kunkel - Radebeul, DE
Shahid Butt - Ossining NY, US
Alan Thomas - Hughsonville NY, US
Juergen Preuninger - Munich, DE

Infineon Technologies AG

G03B 2742
G03B 2732

355 53, 355 77, 430311

A projected image is formed during a material substrate. A photolithographic mask is illuminated with substantially coherent light at an oblique angle of incidence with respect to a surface of the photolithographic mask. The photolithographic mask includes a substantially transparent mask substrate and one or more lines and spaces patterns formed on the mask substrate and having a periodicity P. The mask substrate includes at least one phase shifting region. At least part of the light that is transmitted through the photolithographic mask is collected using one or more projection lenses which project the portion of the transmitted light onto the material substrate. The material substrate is disposed substantially parallel with, but at a distance from, a focal plane of the projection lens system. The phase shifting region of the mask substrate and the distance from the focal plane are selected such that a substantially focused image is projected onto the material substrate that includes the lines and spaces patterned but with a periodicity P/2.

6940583, Sep 6, 2005

Jul 28, 2003

10/604519

Shahid Butt - Ossining NY, US
Martin Burkhardt - White Plains NY, US

International Business Machines Corporation - Armonk NY
Infineon Technologies North America Corp. - San Jose CA

G03B027/42
G03B027/72
G03B027/32
G03C005/04
G02B027/44

355 53, 71 77, 430396, 359563

A method of projecting a pattern from a mask onto a substrate comprises providing an energy source, a substrate, and a mask containing a pattern of features to be projected onto the substrate, and projecting an energy beam from the energy source though the mask toward the substrate to create a projected mask pattern image. The projected mask pattern image is created by zeroth and higher orders of the energy beam. The method then includes diffracting zeroth order beams of the projected mask pattern image to an extent that prevents the zeroth order beams from reaching the substrate, while permitting higher order beams of the projected mask pattern image to reach the substrate. Preferably, the zeroth order beams of the projected mask pattern image are diffracted at an obtuse angle.

7016027, Mar 21, 2006

May 8, 2003

10/431368

Shahid Butt - Ossining NY, US
Shoaib Zaidi - Poughkeepsie NY, US

Infineon Technologies AG - Munich

G01N 21/00

3562371

A method and system for detecting the quality of an alternating phase shift mask having a number of 180-degree phase shift areas alternating with a number of 0-degree phase shift areas is disclosed. In operation, a light source which provides wavelength-adjustable incident lights illuminates the incident lights on the alternating phase shift mask. The light outputs from boundaries between the 0-degree phase shift areas and the 180-degree phase shift areas of the alternating phase shift mask are detected. Relation curves of the wavelength of the incident light and a light intensity of the boundaries are then calculated. Phase errors of the alternating phase shift mask can thus be measured from the relation curves.

7056628, Jun 6, 2006

Sep 2, 2003

10/653537

Shahid Butt - Ossining NY, US
Henning Haffner - Dresden, DE

Infineon Technologies AG - Munich

G01F 9/00

430 5

A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.