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Shanshan Liu, 3980TH Greenacres Ave, Scarsdale, NY 10583

Known as:
Shasha Liu
Related to:
Ting Li 45 Laiqiang Huang 54

Shanshan Liu Phones & Addresses

Scarsdale, NY   

Rego Park, NY   

Vernon Hills, IL   

Athens, GA   

Wheeling, IL   

Hermitage, TN   

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Mentions for Shanshan Liu

Career records & work history

Lawyers & Attorneys

Shanshan Liu Photo 1

Shanshan Liu - Lawyer

Specialties:
Business Immigration & Compliance
ISLN:
923323393
Admitted:
2015
University:
Cornell University, Cornell Institute for Public Affairs, M.P.A., 2012; Imperial College, University of London, B.S., 2009
Law School:
American University Washington College of Law, J.D.; American University Washington College of Law, J.D.

Shanshan Liu resumes & CV records

Resumes

Shanshan Liu Photo 33

Math Tutor

Location:
Flushing, NY
Work:
Queensborough Community College
Math Tutor
Education:
Baruch College 2015 - 2017
Bachelors
Shanshan Liu Photo 34

Math Tutor

Location:
Flushing, NY
Industry:
Financial Services
Work:
Queensborough Community College
Math Tutor Soho Beauty Spa Apr 2012 - Aug 2016
Manager Baruch College Apr 2012 - Aug 2016
Student Laguardia Community College Sep 2013 - Aug 2015
Student Laguardia Community College Sep 2014 - Jan 2015
President's Society Ambassador Apex For Youth Sep 2014 - Jan 2015
Office Manager
Education:
Baruch College 2015 - 2016
Bachelors, Actuarial Science Laguardia Community College 2013 - 2015
Associates, Business Administration, Management, Business Administration and Management
Skills:
Detail Oriented Quick Learner, Able To Be Quickly Adapted To Different Environment, Good Communication Skills In English and Chinese, Outstanding Customer Service Skills, Microsoft Word, Powerpoint, Excels, Windows 7, Windows Xp Pro, Microsoft Office, Time Management, Photoshop, Social Media, Nonprofits
Shanshan Liu Photo 35

Shanshan Liu

Shanshan Liu Photo 36

Shanshan Liu

Shanshan Liu Photo 37

Shanshan Liu

Shanshan Liu Photo 38

Shanshan Liu

Shanshan Liu Photo 39

Shanshan Liu

Shanshan Liu Photo 40

Shanshan Liu

Publications & IP owners

Us Patents

Method For Fabrication Of Crack-Free Ceramic Dielectric Films

US Patent:
2013008, Apr 4, 2013
Filed:
Sep 30, 2011
Appl. No.:
13/250926
Inventors:
Beihai Ma - Naperville IL, US
Uthamalingam Balachandran - Willowbrook IL, US
Sheng Chao - Greensburg PA, US
Shanshan Liu - Naperville IL, US
Manoj Narayanan - Woodridge IL, US
Assignee:
UCHICAGO ARGONNE, LLC - Chicago IL
International Classification:
B05D 5/12
B32B 7/02
US Classification:
428216, 427 77
Abstract:
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Method Of Making Dielectric Capacitors With Increased Dielectric Breakdown Strength

US Patent:
2013033, Dec 19, 2013
Filed:
Jun 14, 2012
Appl. No.:
13/523335
Inventors:
Beihai Ma - Naperville IL, US
Uthamalingam Balachandran - Willowbrook IL, US
Shanshan Liu - Naperville IL, US
Assignee:
UCHICAGO ARGONNE, LLC. - Chicago IL
International Classification:
H01G 4/12
H01G 4/10
H01G 4/008
H01G 4/00
US Classification:
361305, 361311, 3613215, 29 2542
Abstract:
The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Method For Fabrication Of Crack-Free Ceramic Dielectric Films

US Patent:
2016037, Dec 29, 2016
Filed:
May 26, 2016
Appl. No.:
15/165427
Inventors:
Beihai Ma - Naperville IL, US
Manoj Narayanan - Edison NJ, US
Uthamalingam Balachandran - Willowbrook IL, US
Sheng Chao - Lotrobe PA, US
Shanshan Liu - Homer Glen IL, US
Assignee:
UCHICAGO ARGONNE, LLC - Chicago IL
International Classification:
C23C 18/12
H01L 21/3105
H01L 49/02
H01L 21/02
Abstract:
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Possible Relatives

Cynthia S Liu  David Y Liu  Dean Liu  Da J Liu  Debbie Y Liu  Deborah Y Liu  Dan Liu  Shanshan S Zheng  Shanshan Zhou  Shanshan H Kung 

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