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Sharad C Kapur, 5414 Baldwin Dr, Murray Hill, NJ 07974

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14 Baldwin Dr, New Providence, NJ 07974    908-4640885   

Basking Ridge, NJ   

Summit, NJ   

86 Clinton St, Hoboken, NJ 07030    201-7983922   

86 Clinton St #2, Hoboken, NJ 07030    201-7983922   

40 Newport Pkwy, Jersey City, NJ 07310    201-7983922   

Berkeley Heights, NJ   

New Haven, CT   

Union, NJ   

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Us Patents

System And Method For Determining Capacitance For Large-Scale Integrated Circuits

US Patent:
6871167, Mar 22, 2005
Filed:
Oct 26, 1999
Appl. No.:
09/427238
Inventors:
Sharad Kapur - Jersey City NJ, US
David E. Long - New Providence NJ, US
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
G06F017/10
US Classification:
703 2, 703 13, 703 14, 702 27, 382285
Abstract:
For use in an integral equation formulation of capacitance, a system for, and method of, generating a representation of charge distribution for a given capacitive structure (which may be an integrated circuit). In one embodiment, the system includes: (1) a charge variation function generator that creates a multidimensional charge variation function that is not directly dependent on a conductive geometry of the structure and (2) a conductive geometry generator, associated with the charge variation generator, that creates a conductive geometry that is independent of charge variation in the structure, the charge variation function and the conductive geometry employable in the integral equation formulation to reduce a complexity thereof.

Efficient Large-Scale Full-Wave Simulation

US Patent:
7721233, May 18, 2010
Filed:
Sep 20, 2005
Appl. No.:
11/231122
Inventors:
Sharad Kapur - Hoboken NJ, US
David E. Long - New Providence NJ, US
International Classification:
G06F 17/50
US Classification:
716 4
Abstract:
Significant improvement is achieved in the analysis of IC layout by utilizing the fact that IC designs exhibit a large amount of regularity. By employing a unique mesh generation approach that takes advantage of the regularity, combined with the use of a limited number of different shapes for the majority of the IC geometry greatly increases the speed of processing. Additionally, by employing a unique approach for specifying the different mesh elements—based on the parameters that define the relative difference between one shape and another—provides significant additional reductions in the necessary calculations, and a corresponding increase in speed of IC simulations. Yet another improvement is realized by simplifying the inductive influence calculations by employing averages that permit using dot products of vectors rather than integrations of non-constant vectors.

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