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Shawn T Walsh, 4552 Greenway Ln, Rye Brook, NY 10573

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52 Greenway Ln, Port Chester, NY 10573   

Rye Brook, NY   

Fairfield, CT   

Larchmont, NY   

Greenwich, CT   

Work

Company: Network & solutions training Address: 312 Larkfield Rd, Elwood, NY 11731 Phones: 877-6788080 Position: Project manager Industries: Computer Integrated Systems Design

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Shawn Walsh resumes & CV records

Resumes

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Shawn Walsh

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Shawn Walsh

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Shawn Walsh

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Shawn Walsh

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Creative Director, Unify Interactive, Llc

Position:
Creative Director at Unify Interactive, LLC
Location:
Greater New York City Area
Industry:
Marketing and Advertising
Work:
Unify Interactive, LLC since Mar 2009
Creative Director
Zeta Interactive Jan 2008 - Apr 2009
SEO Specialist
Innodata Isogen Jan 2007 - Nov 2007
Manager, Creative Services /SEO
The Creative Group Jan 2006 - Jan 2007
Freelance Web Designer
1 Media Group Jan 2004 - Jan 2006
Creative Director
Sony Electronics May 2003 - Jan 2004
Web Designer
Bon Venture Services Jan 2002 - May 2003
Graphic Designer
Thornton Marketing and Design Jan 2000 - Jan 2002
Intern Web Designer
Education:
Search Engine Marketing Professional Organization 2008 - 2008
NCC 2000 - 2002
Skills:
Photoshop, Illustrator, Indesign, Dreamweaver, Flash, Search Engine Optimization, Google Analytics, SEO, Organic Search, Online Advertising, Social Media Marketing, Interactive Advertising, Information Architecture, User Experience, Interaction Design, Digital Strategy, Email Marketing, Content Strategy, Web Design, Wordpress, Creative Strategy, Advertising, Graphic Design, Logo Design, Creative Direction, Art Direction
Shawn Walsh Photo 55

Future Technologies At Ibm

Position:
Future Technologies at IBM
Location:
Greater New York City Area
Industry:
Semiconductors
Work:
IBM
Future Technologies
Shawn Walsh Photo 56

Shawn Walsh

Location:
United States
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Shawn Walsh

Location:
United States

Publications & IP owners

Wikipedia

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Shawn Walsh

William Shawn Walsh (June 21, 1955 in White Plains, New York September 26, 2001 in Bangor, Maine) was the head ice hockey coach for the University of ...

Us Patents

Self-Aligned Dual Damascene Beol Structures With Patternable Low-K Material And Methods Of Forming Same

US Patent:
8415248, Apr 9, 2013
Filed:
May 17, 2012
Appl. No.:
13/474349
Inventors:
Qinghuang Lin - Yorktown Heights NY, US
Sampath Purushothaman - Yorktown Heights NY, US
Terry A. Spooner - Albany NY, US
Shawn M. Walsh - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/4763
US Classification:
438623, 257E21575
Abstract:
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

Self-Aligned Dual Damascene Beol Structures With Patternable Low- K Material And Methods Of Forming Same

US Patent:
8519540, Aug 27, 2013
Filed:
Jun 16, 2009
Appl. No.:
12/485366
Inventors:
Qinghuang Lin - Yorktown Heights NY, US
Sampath Purushothaman - Yorktown Heights NY, US
Terry A. Spooner - Albany NY, US
Shawn M. Walsh - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/48
US Classification:
257759, 257E23142
Abstract:
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

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