Shobha R Singh, 9544 Pine St, Cherry Brook, MA 02493

5388114, Feb 7, 1995

Mar 17, 1994

8/210037

Joseph H. Zarrabi - Malden MA
Shobha Singh - Weston MA
Pavle Gavrilovic - Brockton MA

Polaroid Corporation - Cambridge MA

H01S 316
H01S 311
G02F 137

372 22

A diode-pumped monolithic laser is fabricated from a self-doubling host material co-doped with two ionic species, where one ionic dopant converts pump radiation to continuous radiation at a fundamental frequency and the other dopant acts as a saturable absorber to Q-switch the fundamental radiation which is then frequency doubled to produce pulsed high-intensity green light, the green light being either outputted or further frequency-doubled, into pulsed coherent UV radiation, by means of a non-linear crystal.

6154598, Nov 28, 2000

Dec 22, 1997

8/995445

Pavle Gavrilovic - Melrose MA
Anish K. Goyal - Sommerville MA
Hong Po - Sherborn MA
Shobha Singh - Weston MA

Polaroid Corporation - Cambridge MA

G02B 600
H01S 307

385141

An optical waveguide laser, preferably a fiber laser, has unintentionally incorporated impurities disposed in the lasing medium which upconvert a portion of the lasing radiation to radiation of shorter wavelength, thereby introducing defects in the medium which result in increased absorption due to photodarkening. Suitable rare-earth co-dopants are intentionally incorporated during the manufacture of the fiber for effectively shunting the upconversion process. The lifetime of the fiber laser is thereby increased.

5280534, Jan 18, 1994

Feb 25, 1993

8/022483

Pavle Gavrilovic - Brockton MA
Shobha Singh - Weston MA

Polaroid Corporation - Cambridge MA

H01S 310

372 20

A crystalline material for use in a solid state tunable laser is YAG:Mn wherein the Mn is predominantly trivalent. The laser is tunable in the yellow-orange range (0. 59-0. 63. mu. m) and the near infrared range (1. 04-1. 2. mu. m).

4332440, Jun 1, 1982

Mar 17, 1980

6/131080

Mauro DiDomenico - Bernardsville NJ
Shobha Singh - Summit NJ
LeGrand G. Van Uitert - Morristown NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G02F 117

350357

Display devices are described in which certain structural features prevent cross-talk effects between individual display elements. This ensures sharp delineation between individual display elements which promotes high contrast and sharp displays. These structural features are particularly advantageous for multiplexed display systems so as to simplify circuit arrangements and ensure sharp, high-contrast displays.

4240716, Dec 23, 1980

Dec 15, 1978

5/969773

Irfan Camlibel - Stirling NJ
Shobha Singh - Summit NJ
LeGrand G. Van Uitert - Morristown NJ
George J. Zydzik - Columbia NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G02F 129

350363

An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide and bromide. The electrolyte also contains an opacifier made up of solid semiconductor substance and solid insulator substance. Such display devices have high contrast, large viewing angle and a pleasing variety of colors including blue, red and brown.

5011794, Apr 30, 1991

May 1, 1989

7/345923

Karen A. Grim - Reading PA
Shobha Singh - Summit NJ
LeGrand G. Van Uitert - Morristown NJ
George J. Zydzik - Columbia NJ

AT&T Bell Laboratories - Murray Hill NJ

H01L 2100
H01L 2102
H01L 2118
H01L 2120

437247

This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA. In a preferred embodiment the RTA comprises (a) a pre-anneal step which includes heating to a temperature and for a period sufficient to preheat the wafer so as to reduce thermal shock due to a main annealing step, (b) the main annealing step being at a temperature and for a period sufficient to remove damage caused to said surface by the dopant implantation and to activate implanted dopant, and (c) a post-anneal step carried out at a temperature and for a period sufficient to relieve stresses which may result from the main-annealing step. The combined use of the RTA and the black box leads to wafers substantially free or slip lines and with reproducibly high mobilities and uniform activation.

4731293, Mar 15, 1988

Jun 20, 1986

6/876442

David T. Ekholm - Mountainside NJ
William H. Grodkiewicz - Glen Gardner NJ
Bertram Schwartz - Westfield NJ
Shobha Singh - Summit NJ
LeGrand G. Van Uitert - Morris Township, Morris County NJ
George J. Zydzik - Columbia NJ

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

B32B 1706

428426

A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc. , particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

4187530, Feb 5, 1980

Jun 1, 1978

5/911338

Shobha Singh - Summit NJ
LeGrand G. Van Uitert - Morris Township, Morris County NJ
George J. Zydzik - Columbia NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01G 900

361433

Certain structures are described for solid state electrical switches which employ electrochromic material. These structures involve use of a common base contact for both switching and readout circuits. The structures are particularly easy to fabricate using integrated circuit techniques and exhibit reduced electrical shorts due to reduced migration of metallic ions.