Solomon S Assefa, 455 Brooke Club Dr APT 4, Crotonville, NY 10562

7248615, Jul 24, 2007

Nov 25, 2003

10/721841

Solomon Assefa - Cambridge MA, US
Leslie A. Kolodziekski - Belmont MA, US
Gale S. Petrich - Arlington MA, US

Massachusetts Institute of Technology - Cambridge MA

H01S 3/08

372 92, 372 97

A microcavity structure includes a first waveguide that includes a first photonic crystal microcavity. A second waveguide includes a second photonic crystal microcavity. A microcavity active region is created by overlapping the first and second microcavities.

7492631, Feb 17, 2009

May 9, 2008

12/118496

Solomon Assefa - Ossining NY, US
William J. Gallagher - Ardsley NY, US
Chung H. Lam - Peekskill NY, US
Jonathan Z. Sun - Shrub Oak NY, US

International Business Machines Corporation - Armonk NY

G11C 11/14

365171, 365158, 365173

An exemplary method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a conductor, wherein the first current is operative to change a direction of orientation of a magnetic reference layer, inducing a second current from the drain terminal to the write terminal via a conductive layer, wherein the second current is operative to change the direction of a magnetic state of a free layer magnet, and inducing a third current through the conductor, wherein the third current is operative to change the direction of magnetic orientation of the reference layer.

7505308, Mar 17, 2009

May 9, 2008

12/118441

Solomon Assefa - Ossining NY, US
William J. Gallagher - Ardsley NY, US
Chung H. Lam - Peekskill NY, US
Jonathan Z. Sun - Shrub Oak NY, US

International Business Machines Corporation - Armonk NY

G11C 11/14
G11C 11/15
G11C 11/16

365158, 365171, 365173, 3652255, 257414, 257421

An exemplary magnetic random access memory system comprising, a spin-current generating portion including, a ferromagnetic film layer, and a conductance layer, a first write portion in electrical contact with the ferromagnetic film including, a selection device, and a first read portion in electrical contact with the conductance layer including, a free layer magnet, a read non-magnetic layer, and a reference layer, a second write portion in electrical contact with the ferromagnetic film, and a second read portion in electrical contact with the conductance layer.

7531367, May 12, 2009

Jan 18, 2006

11/333997

Solomon Assefa - Elmsford NY, US
Michael C. Gaidis - Wappingers Falls NY, US
Sivananda Kanakasabapathy - Hopewell Junction NY, US
John P. Hummel - Millbrook NY, US
David W. Abraham - Croton-on-Hudson NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438 3, 257E21665

Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.

7738753, Jun 15, 2010

Jun 30, 2008

12/164580

Solomon Assefa - Ossining NY, US
Christopher Jahnes - Upper Saddle River NJ, US
Yurii Vlasov - Katonah NY, US

International Business Machines Corporation - Armonk NY

G02B 6/12
G02B 6/10
H01L 21/302

385 49, 385 14, 385 88, 385131, 438 31, 438 33, 216 2, 257E21214

An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.

7755921, Jul 13, 2010

Aug 14, 2007

11/838663

Solomon Assefa - Elmsford NY, US
Michael C. Gaidis - Wappingers Falls NY, US
Eric A. Joseph - White Plains NY, US
Stuart Stephen Papworth Parkin - San Jose CA, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

G11C 19/00

365 80, 365 87

In one embodiment, the invention is a method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices. One embodiment of a memory device includes a first stack of dielectric material formed of a first dielectric material, a second stack of dielectric material surrounding the first stack of dielectric material and formed of at least a second dielectric material, and at least one data track for storing information, positioned between the first stack of dielectric material and the second stack of dielectric material, the data track having a high aspect ratio and a substantially rectangular cross section.

7782660, Aug 24, 2010

Mar 20, 2008

12/052326

Solomon Assefa - Ossining NY, US
Sivananda K. Kanakasabapathy - Niskayuna NY, US
Janusz Jozef Nowak - Highland Mills NY, US
Philip L Trouilloud - Norwood NJ, US

International Business Machines Corporation - Armonk NY

G11C 11/00

365158, 365171, 365173

Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

7790495, Sep 7, 2010

Oct 26, 2007

11/925170

Solomon Assefa - Ossining NY, US
Stephen Walter Bedell - Wappingers Falls NY, US
Yurii A. Vlasov - Katonah NY, US
Fengnian Xia - New York NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438 63, 438 69, 438 93, 438 98, 257459, 257453, 257455, 257E31011, 257E21158

An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.