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Stephen J Spaziani, 37Pt Of Pines, MA

Known as:
Steven Spaziani Spaziani Stephen
Related to:
Michael A Spaziani

Stephen Spaziani Phones & Addresses

Revere, MA   

30 Chestnut St #2, Stoneham, MA 02180   

East Falmouth, MA   

2 Stonecrest Dr, Saugus, MA 01906    781-5581255   

Milton, MA   

Reading, MA   

Roxbury, MA   

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Stephen Spaziani resumes & CV records

Resumes

Stephen Spaziani Photo 19

Production Transition Manager At Solid State Scientific Corp.

Location:
Greater Boston Area
Industry:
Defense & Space
Stephen Spaziani Photo 20

Process Engineer At Air Force Research Laboratory

Location:
Greater Boston Area
Industry:
Defense & Space
Stephen Spaziani Photo 21

Production Transition Manager At Solid State Scientific Corp.

Location:
Greater Boston Area
Industry:
Defense & Space

Publications & IP owners

Us Patents

Fet Optical Receiver Using Backside Illumination, Indium Materials Species

US Patent:
5608255, Mar 4, 1997
Filed:
May 17, 1995
Appl. No.:
8/443916
Inventors:
Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
William Waters - Glassborn NJ
Joseph P. Lorenzo - Stow MA
Stephen Spaziani - Nashua NH
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 2348
H01L 310224
H01L 2941
US Classification:
257466
Abstract:
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

Infrared Receiver Wafer Level Probe Testing

US Patent:
5631571, May 20, 1997
Filed:
Apr 3, 1996
Appl. No.:
8/626870
Inventors:
Stephen Spaziani - Nashua NH
Kenneth Vaccaro - Acton MA
William Waters - Bedford MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
G01R 3128
G01R 3126
G01R 1900
US Classification:
324752
Abstract:
A system for functionally testing opto-electronic devices, such as fiber-optic infrared receiver photodiodes, in the integral wafer or other optical port-exposed status. The testing arrangement uses a portable optical probe for communicating optical signals between the testing apparatus and the tested device in coincidence with electrical energization and functional operation of the electro-optical device by the test apparatus. The optical probe signals may be correlated in time relationship or other manner with the electrical signals applied-to the device-under-test. The invention provides simple conversion between a conventional electrical semiconductor device probe station and an electro-optical device probe station.

Transparent Ohmic Contacts For Schottky Diode Optical Detectors On Thin And Inverted Epitaxial Layers

US Patent:
5639673, Jun 17, 1997
Filed:
Jun 8, 1995
Appl. No.:
8/486442
Inventors:
Kenneth Vaccaro - Acton MA
Eric A. Martin - Medford MA
Stephen M. Spaziani - Nashua NH
Andrew Davis - Boston MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 3116
US Classification:
437 5
Abstract:
An InP buffer layer is first formed upon an InP substrate; a thin layer of heavily doped InGaAs, a thick layer of light absorbing InGaAs, and a thin layer of InAlAs are thereafter sequentially grown upon the InP buffer layer. A light reflective Schottky barrier metallic layer is then applied to the InAlAs layer and the resulting device is inverted and affixed to a newly provided substrate, to thus shield and protect the sensitive Schottky contact. The InP substrate layers are thereafter removed and the now exposed thin, heavily doped InGaAs layer is coated with a transparent, electrically conductive layer of Indium-tin-oxide.

Vertical Structure Schottky Diode Optical Detector

US Patent:
5652435, Jul 29, 1997
Filed:
Sep 1, 1995
Appl. No.:
8/522902
Inventors:
Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
Stephen M. Spaziani - Nashua NH
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 3100
US Classification:
257 21
Abstract:
A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigitated electrodes lying in a single plane, response time is improved due to reduced spacing between the electrodes. Response time is also improved since capacitance is reduced due to inherently low doping levels in the semiconductor material. Laterally offset finger electrodes are made light reflective to increase the production of carriers in the InGaAs absorption layer.

Fet Optical Receiver Using Backside Illumination, Indium Materials Species

US Patent:
5532173, Jul 2, 1996
Filed:
Jul 14, 1994
Appl. No.:
8/274930
Inventors:
Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
William Waters - Glassborn NJ
Joseph P. Lorenzo - Stow MA
Stephen Spaziani - Nashua NH
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 3118
US Classification:
437 2
Abstract:
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

Possible Relatives

David M Spaziani  Elizabeth A Spaziani  Franco A Spaziani  Mark A Spaziani  Michael L Spaziani  Robert V Spaziani  Anthony Spaziani  Stephen H Last  Stephen V Johnson  Stephen Stamps 

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