Steven D Peterson, 67Springfield, IL

6442061, Aug 27, 2002

Feb 14, 2001

09/783653

Weiran Kong - Sunnyvale CA
Gary K. Giust - Cupertino CA
Ramnath Venkatraman - San Jose CA
Franklin Duan - Sunnyvale CA
Ruggero Castagnetti - Menlo Park CA
Steven M. Peterson - Eagan MN
Myron J. Buer - Shakopee MN
Minh Tien Nguyen - San Jose CA

LSI Logic Corporation - Milpitas CA

G11C 1100

365154, 365188, 365156

A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first pass gate transistor is electrically connected to a first bit line, and the drain of the first pass gate transistor is electrically connected to a first state node. The gate of the first pass gate transistor is electrically connected to a memory cell enable line. A second pass gate transistor is also formed of the first transistor type. The second pass gate transistor also has a gate oxide with the first thickness. The source of the second pass gate transistor is electrically connected to a second bit line, and the drain of the second pass gate transistor is electrically connected to a second state node. The gate of the second pass gate transistor is electrically connected to the memory cell enable line. A first state node transistor is also formed of the first transistor type.

6472715, Oct 29, 2002

Sep 28, 2000

09/675109

Helmut Puchner - Santa Clara CA
Ruggero Castagnetti - San Jose CA
Weiran Kong - Sunnyvale CA
Lee Phan - Fremont CA
Franklin Duan - Sunnyvale CA
Steven Michael Peterson - Eagan MN

LSI Logic Corporation - Milpitas CA

H01L 2976

257371, 257376, 257387

An integrated circuit structures such as an SRAM construction wherein the soft error rate is reduced comprises an integrated circuit structure formed in a semiconductor substrate, wherein at least one N channel transistor is built in a P well adjacent to one or more deep N wells connected to the high voltage supply and the deep N wells extend from the surface of the substrate down into the substrate to a depth at least equal to that depth at which alpha particle-generated electron-hole pairs can effectively cause a soft error in the SRAM cell. For a 0. 25 m SRAM design having one or more N wells of a conventional depth not exceeding about 0. 5 m, the depth at which alpha particle-generated electron-hole pairs can effectively cause a soft error in the SRAM cell is from 1 to 3 m. The deep N well of the 0. 25 m SRAM design, therefore, extends down from the substrate surface a distance of at least about 1 m, and preferably at least about 2 m.

7289460, Oct 30, 2007

Jun 12, 2003

10/462094

John C. Thacker - Los Altos CA, US
Steven R. Peterson - Merion Station PA, US
Scott Blanchard - Mesa AZ, US
Gregory E. Edlund - Torrance CA, US

Lockheed Martin Corporation - Bethesda MD
General Dynamics Decision Systems, Inc. - Scottsdale AZ

H04B 7/216

370320

Embodiments of the present invention are directed to a satellite communications system between satellites and terminal units that are sufficiently small to be handheld units and that operate within the earth power flux density limit. This is accomplished by using spreading spectrum waveform protocols that make efficient use of the allocated bandwidth. In one embodiment, a satellite communications system comprises at least one satellite, and at least one ground station each corresponding to one of the at least one satellite. Each ground station includes a spread spectrum transmitter and a spread spectrum receiver. Each of a plurality of mobile terminals includes a spread spectrum transmitter and a spread spectrum receiver. The spread spectrum transmitter of the at least one ground station is configured to communicate via the corresponding satellite with the spread spectrum receivers of the mobile terminals, and the spread spectrum receiver of the at least one ground station is configured to communicate via the satellite with the spread spectrum transmitter of the mobile terminals, using spread spectrum signals generated from baseband information signals narrower in bandwidth than the spread spectrum signals.

2012021, Aug 16, 2012

Jan 12, 2012

13/349345

Michael Luna - San Jose CA, US
Isabelle Dumont - Half Moon Bay CA, US
Steven L. Peterson - Los Gatos CA, US
Anthony Stevens - San Francisco CA, US
Ronald G. Earley - Pleasanton CA, US

G06F 3/048
G06F 15/16
G06F 3/01

715753, 715835

Systems and methods for unified access and management of events across multiple applications and the associated contacts thereof are disclosed. In one aspect, embodiments of the present disclosure include a method, which may be implemented on a system, for enabling multi-application access of associated events via a single interface, including, depicting in the single interface on a device, representations of multiple applications available for access at the device where the single interface is further populated with the events associated with the multiple applications. One embodiment further includes, updating the single interface to visually depict recent events received content from the multiple applications where each of the representations in the single interface, are selectable or actionable to access application features of a corresponding application in a different interface.