Resumes & CV records
Resumes
Retred
Location:
Westford, MA
Industry:
Higher Education
Work:
Retred
Steven Brierley
Steven Brierley
Steven K Brierley, 7716 Phillips Dr, Graniteville, MA 01886
Steven Brierley Phones & Addresses
16 Phillips Dr, Westford, MA 01886 978-6925280 978-6926460
Conway, NH
Campton, NH
Andover, MA
Berwyn, PA
16 Phillips Dr, Westford, MA 01886 978-8526008
Work
Position:
Executive, Administrative, and Managerial Occupations
Education
Degree:
Bachelor's degree or higher
Mentions for Steven K Brierley
Retred
Publications & IP owners
Us Patents
Semiconductor Structure And Method
US Patent:
2011004, Mar 3, 2011
Filed:
Sep 3, 2009
Appl. No.:
12/553249
Inventors:
Eduardo M. Chumbes - Andover MA, US
William E. Hoke - Wayland MA, US
Kelly P. Ip - Lowell MA, US
Dale M. Shaw - Groton MA, US
Steven K. Brierley - Westford MA, US
William E. Hoke - Wayland MA, US
Kelly P. Ip - Lowell MA, US
Dale M. Shaw - Groton MA, US
Steven K. Brierley - Westford MA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
H01L 27/06
H01L 21/302
H01L 21/02
H01L 29/38
H01L 21/31
H01L 21/302
H01L 21/02
H01L 29/38
H01L 21/31
US Classification:
257277, 438703, 438393, 257618, 438778, 257E27016, 257E29105, 257E21214, 257E2124, 257E21011
Abstract:
A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.
Gan High Electron Mobility Transistor (Hemt) Structures
US Patent:
2010021, Sep 2, 2010
Filed:
Feb 27, 2009
Appl. No.:
12/394182
Inventors:
STEVEN K. BRIERLEY - Westford MA, US
International Classification:
H01L 29/778
H01L 21/335
H01L 21/335
US Classification:
257194, 438172, 257E29246, 257E21403
Abstract:
A GaN HEMT structure having: a first III-N layer on GaN; a source electrode in contact with a first surface portion the first III-N layer disposed over a first region in the GaN layer; a drain electrode in contact with a second surface portion of the first III-N layer disposed over a second region in the GaN layer; a gate electrode disposed over a third surface portion of the first III-N layer, such third surface portion being disposed over a third region in the GaN layer. The GaN layer has: a fourth region therein disposed between the first region therein and the third region; and a fifth region therein disposed between the third region therein and the second region therein. A second III-N layer is disposed over the first III-N layer for generating a two-dimensional electron gas density in the GaN density in at least one of the fourth region and fifth region greater than the density in the third region of the GaN layer.
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