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Steven Herbert Griffiths, 34107 Waltons Creek Rd, Morrisville, NC 27560

Steven Griffiths Phones & Addresses

Morrisville, NC   

Durham, NC   

Santa Barbara, CA   

Ann Arbor, MI   

Silver Lake, OH   

1931 Duffield St, Ann Arbor, MI 48109   

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Steven Herbert Griffiths

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Work

Company: Wolfspeed May 2017 Position: Research scientist, r and d materials - power and rf

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Uc Santa Barbara 2012 to 2017 Specialities: Philosophy

Skills

Scanning Electron Microscopy • Matlab • Thin Films • Characterization • Research • Afm • Mathematica • Materials Science • Arduino Hardware and Software • Atomic Force Microscopy • Energy Dispersive Spectroscopy • Minitab Statistical Software • Technical Writing

Interests

Camping/Backpacking • Environmental Conservatism • Skiing • Alternative Energy • Hiking • Brewing

Industries

Semiconductors

Mentions for Steven Herbert Griffiths

Steven Griffiths resumes & CV records

Resumes

Steven Griffiths Photo 30

Research Scientist, R And D Materials

Location:
107 Waltons Creek Rd, Morrisville, NC 27560
Industry:
Semiconductors
Work:
Wolfspeed
Research Scientist, R and D Materials - Power and Rf
Uc Santa Barbara Jun 2012 - May 2017
Ph.d Candidate
University of Michigan May 2010 - Apr 2012
Research Assistant
University of Michigan Aug 2010 - Dec 2011
Resident Advisor
Dow Corning May 2011 - Aug 2011
Solar Wafer Intern
May 2011 - Aug 2011
Research Scientist, R and D Materials
Education:
Uc Santa Barbara 2012 - 2017
Doctorates, Doctor of Philosophy, Philosophy
University of Michigan 2008 - 2012
Bachelor of Science In Engineering, Bachelors, Materials Science, Engineering
Skills:
Scanning Electron Microscopy, Matlab, Thin Films, Characterization, Research, Afm, Mathematica, Materials Science, Arduino Hardware and Software, Atomic Force Microscopy, Energy Dispersive Spectroscopy, Minitab Statistical Software, Technical Writing
Interests:
Camping/Backpacking
Environmental Conservatism
Skiing
Alternative Energy
Hiking
Brewing

Publications & IP owners

Us Patents

Large Dimension Silicon Carbide Single Crystalline Materials With Reduced Crystallographic Stress

US Patent:
2022018, Jun 16, 2022
Filed:
Dec 15, 2020
Appl. No.:
17/121863
Inventors:
- Durham NC, US
Varad R. Sakhalkar - Morrisville NC, US
Caleb A. Kent - Durham NC, US
Valeri F. Tsvetkov - Durham NC, US
Michael J. Paisley - Raleigh NC, US
Oleksandr Kramarenko - Durham NC, US
Matthew David Conrad - Durham NC, US
Eugene Deyneka - Raleigh NC, US
Steven Griffiths - Morrisville NC, US
Simon Bubel - Carrboro NC, US
Adrian R. Powell - Cary NC, US
Robert Tyler Leonard - Raleigh NC, US
Elif Balkas - Cary NC, US
Curt Progl - Raleigh NC, US
Michael Fusco - Wake Forest NC, US
Alexander Shveyd - Chapel Hill NC, US
Kathy Doverspike - Cary NC, US
Lukas Nattermann - Chapel Hill NC, US
International Classification:
H01L 21/02
C30B 29/36
Abstract:
Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

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