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Tamer B Onat, 566304 Hunting Ridge Ln, Mc Lean, VA 22101

Known as:
Tamer Ece Onat Tamer R Onat Baki Onat Tamer Onat Tamer Tamer T

Tamer Onat Phones & Addresses

6304 Hunting Ridge Ln, Mc Lean, VA 22101   

McLean, VA   

21 Prospect St, Reading, MA 01867    781-9444120   

Waltham, MA   

400 Cross St, Winchester, MA 01890    781-7210661    781-9444120   

400 Cross St #401, Winchester, MA 01890    781-7210661   

Bristol, RI   

Middletown, RI   

Boston, MA   

Boylston, MA   

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Tamer B Onat

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Work

Company: Nuwc 1992 to 1999 Position: Electrical engineer

Education

School / High School: Boston University 1990 to 1992

Industries

Semiconductors
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Mentions for Tamer B Onat

Tamer Onat resumes & CV records

Resumes

Tamer Onat Photo 9

Senior Systems Engineer

Location:
6304 Hunting Ridge Ln, Mclean, VA 22101
Industry:
Semiconductors
Work:
Nuwc 1992 - 1999
Electrical Engineer Boston University 1990 - 1992
Graduate Teaching Fellow Boston University 1989 - 1992
Student Varian Semiconductor 1989 - 1992
Senior Systems Engineer
Education:
Boston University 1990 - 1992

Publications & IP owners

Us Patents

Automated Faraday Sensor Test System

US Patent:
7564048, Jul 21, 2009
Filed:
Jun 30, 2006
Appl. No.:
11/479397
Inventors:
Joseph P. Dzengeleski - Newton NH, US
Greg Gibilaro - Topsfield MA, US
Gregg Norris - Rockport MA, US
David Olden - Acton MA, US
Tamer Onat - Winchester MA, US
Assignee:
Varian Semiconductor E1quipment Associates, Inc. - Gloucester MA
International Classification:
G21K 5/10
US Classification:
25049221, 2504921, 250397, 702 65, 324 713
Abstract:
A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.

Method And System For In-Situ Calibration Of A Dose Controller For Ion Implantation

US Patent:
2005013, Jun 23, 2005
Filed:
Dec 22, 2003
Appl. No.:
10/744250
Inventors:
Tamer Onat - Winchester MA, US
Rajen Sud - Burlington MA, US
Gregory Gibilaro - Topsfield MA, US
Joseph Dzengeleski - Newton NH, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J003/14
US Classification:
250397000
Abstract:
A systematic in-situ analysis is provided for ensuring that a uniform and accurate ion implantation dose for workpieces is being realized. Prior to implantation the system determines whether the calibration of a dose controller is within predetermined tolerance values. If the dose controller is outside of these values, the implantation process is halted so that the calibration can be remedied without further damaging any workpieces by mis-dosing.

Possible Relatives

Tamer H Hassan  Tamer O Onay  Tamer S Gaber  Tamer M Fakhouri  Tamer A Eid  Tamer S Hendi  Tamer M Elmasry  Tamer L Elsawy  Tamer E Khodier  Tamer E Qursha 

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