Terence J Riley DeceasedCornwall Hud, NY

4232328, Nov 4, 1980

Dec 20, 1978

5/971632

Adrian R. Hartman - New Providence NJ
Terence J. Riley - Warren NJ
Peter W. Shackle - Bridgewater NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 2704

357 49

Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as. pi. material, for the material of the pocket, one transistor is a PN. pi. P device, and the other is an NP. pi. N. In the PN. pi. P the reverse-biased base-collector pn junction is the interface between the N base zone (16) and the. pi. portion (12) of the collector zone. In the NP. pi.

4586073, Apr 29, 1986

Mar 27, 1981

6/248205

Adrian R. Hartman - New Providence NJ
Bernard T. Murphy - Summit NJ
Terence J. Riley - Wyomissing PA
Peter W. Shackle - West Melborne FL

AT&T Bell Laboratories - Murray Hill NJ

H01L 2978

357 45

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body on an n type semiconductor substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. The anode region and second p type region are separated from each other by a portion of the semiconductor body. The semiconductor substrate, which acts as a gate, has an electrode connected thereto. Separate electrodes are connected to the anode and cathode regions.

4587656, May 6, 1986

Mar 27, 1981

6/248207

Adrian R. Hartman - New Providence NJ
Terence J. Riley - Wyomissing PA
Peter W. Shackle - West Melborne FL

AT&T Bell Laboratories - Murray Hill NJ

H01L 2972

357 38

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first n type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. A second p type region of lower impurity concentration than the anode region surrounds the cathode region so as to separate it from the bulk portion of the semiconductor body. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.

4608590, Aug 26, 1986

Dec 22, 1981

6/333461

Adrian R. Hartman - New Providence NJ
Terence J. Riley - Wyomissing PA
Peter W. Shackle - West Melborne FL

AT&T Bell Laboratories - Murray Hill NJ

H01L 2974

357 38

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.

4447744, May 8, 1984

Dec 22, 1981

6/333434

Adrian R. Hartman - New Providence NJ
James E. Kohl - North Brunswick NJ
William F. MacPherson - Winfield Township, DuPage County IL
Terence J. Riley - Wyomissing PA

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H03K 1712
H03K 1772

307252R

Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially of first and second p-n-p transistors. The collector of the first p-n-p transistor is coupled to an anode of the control switch. The emitter of the first p-n-p transistor is coupled to the base of the second p-n-p transistor and to a control circuitry input terminal. The collector of the second p-n-p transistor is coupled to a gate terminal of the control switch. The control circuitry limits undesirable current flow into the load switch and has fewer components than commonly used control circuitry which performs a like function.