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Thomas Earl Anthony, 6227201 Hickory St, Holden, LA 70744

Known as:
Thomas E Anthony Tom E Anthony Jacquelyn Anthony Thomas Anthonye Thomas Bridges Anthony Earl Thomas Anthony E Thomas Anthony Jackie
Related to:
Melissa M Anthony 36

Thomas Anthony Phones & Addresses

27201 Hickory St, Holden, LA 70744    225-5677856   

27203 Hickory St, Holden, LA 70744    225-5677856   

Anna, TX   

Homer, LA   

Albany, LA   

Albany, NY   

Hammond, LA   

Dallas, TX   

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Career records & work history

Lawyers & Attorneys

Thomas Anthony Photo 1

Thomas James Anthony - Lawyer

Licenses:
New York - Currently registered 1997
Education:
The University of Chicago
Thomas Anthony Photo 2

Thomas James Anthony Jr. - Lawyer

Licenses:
Virginia - Authorized to practice law 1985
Thomas Anthony Photo 3

Thomas Anthony, Plano TX - Lawyer

Address:
2121 W Spring Creek Pkwy, Plano, TX 75023
Phone:
972-6182600 (Phone)
Experience:
26 years
Specialties:
Business Law, Consumer Law, Divorce, Employment Law, Estate Planning, Family Law, Personal Injury, Real Estate Law, Other
Jurisdiction:
Texas (1999)
Law School:
Southern Methodist University
Education:
Southern Methodist University, JD
Languages:
Chinese
Memberships:
Texas State Bar (1999)

Medicine Doctors

Thomas J. Anthony

Specialties:
Cardiovascular Disease
Work:
Thomas J Anthony MD
9801 Georgia Ave STE 116, Silver Spring, MD 20902
301-5937510 (phone) 301-5937572 (fax)
Thomas J Anthony MD
4 Executive Park Ct, Germantown, MD 20874
301-5402680 (phone) 301-5402682 (fax)
Education:
Medical School
Gandhi Med Coll, Ntr Univ of Hlth Sci, Hyderabad, Ap, India
Graduated: 1981
Procedures:
Angioplasty, Cardiac Catheterization, Cardiac Stress Test, Continuous EKG, Echocardiogram, Electrocardiogram (EKG or ECG)
Conditions:
Acute Myocardial Infarction (AMI), Angina Pectoris, Aortic Valvular Disease, Atrial Fibrillation and Atrial Flutter, Cardiac Arrhythmia, Cardiomyopathy, Conduction Disorders, Congenital Anomalies of the Heart, Heart Failure, Ischemic Heart Disease, Mitral Valvular Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Pericardidtis
Languages:
English
Description:
Dr. Anthony graduated from the Gandhi Med Coll, Ntr Univ of Hlth Sci, Hyderabad, Ap, India in 1981. He works in Silver Spring, MD and 1 other location and specializes in Cardiovascular Disease. Dr. Anthony is affiliated with Adventist Healthcare Shady Grove Medical Center, Holy Cross Hospital, Suburban Hospital and Washington Adventist Hospital.
Thomas Anthony Photo 4

Thomas Anthony

Specialties:
Surgery
Surgical Oncology
Hematology & Oncology
Medical Oncology
Education:
University of Kansas(1988)

License Records

Thomas G Anthony

Licenses:
License #: 2705044446 - Expired
Category: Contractor
Issued Date: May 1, 1998
Expiration Date: May 31, 2016
Type: Class C

Thomas B Anthony

Licenses:
License #: 8738 - Active
Issued Date: Jul 1, 1984
Expiration Date: Jun 30, 2018
Type: Certified Public Accountant

Thomas F Anthony

Licenses:
License #: LS130808L - Expired
Category: Real Estate Commission
Type: Cemetery Salesperson-Standard

Publications & IP owners

Wikipedia

Thomas Anthony Photo 59

Thomas Anthy Dooley Iii

Thomas Anthony Dooley III (January 17, 1927 January 18, 1961) was an American who, while serving as a physician in the United States Navy, ...

Us Patents

Method Of Detection Of Natural Diamonds That Have Been Processed At High Pressure And High Temperatures

US Patent:
6377340, Apr 23, 2002
Filed:
Oct 29, 1999
Appl. No.:
09/430477
Inventors:
Thomas Richard Anthony - Niskayuna NY
John Kieran Casey - Dublin, IE
Alan Cameron Smith - Dublin, IE
Suresh Shankarappa Vagarali - Columbus OH
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01N 2100
US Classification:
356 30, 356244, 250372, 250330
Abstract:
A method for detecting whether a natural diamond has been processed at high pressure and high temperature (HPHT) conditions comprises steps of disposing the diamond in a cyrostat that is provided at temperatures equal to or less than liquid nitrogen; illuminating the diamond with a laser beam; recording an optical spectrum of the diamond with a photoluminescence spectrometer; and examining the optical spectrum of the diamond to detect an absence of selected photoluminescent spectral lines. The invention also sets forth a method for predicting whether a natural diamond has been treated under HPHT conditions.

Surface Impurity-Enriched Diamond And Method Of Making

US Patent:
6887144, May 3, 2005
Filed:
Feb 14, 2001
Appl. No.:
09/783441
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
Clifford Lawrence Spiro - Willoughby Hills OH, US
Yue Meng - Columbus OH, US
Christopher Allen Long - Westerville OH, US
Assignee:
Diamond Innovations, Inc. - Worthington OH
International Classification:
C01B031/06
US Classification:
451462, 423275, 423446, 117929, 428408
Abstract:
An element-doped diamond crystal is disclosed herein. The crystal includes at least one dopant element which has a greater concentration toward or near an outermost surface of the crystal than in the center of the crystal. The concentration of the dopant element is at a local minimum at least about 5 micrometers below the surface. The concentration-profile of the dopant element for these diamond crystals causes an expansion of the diamond lattice, thereby generating tangential compressive stresses at the surface of the diamond crystal. These stresses beneficially increase the compressive fracture strength of the diamond.

Method For Reducing Defect Concentrations In Crystals

US Patent:
7175704, Feb 13, 2007
Filed:
Jun 5, 2003
Appl. No.:
10/455007
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
Stephen Daley Arthur - Glenville NY, US
Lionel Monty Levinson - Niskayuna NY, US
John William Lucek - Powell OH, US
Larry Burton Rowland - Scotia NY, US
Suresh Shankarappa Vagarali - Columbus OH, US
Assignee:
Diamond Innovations, Inc. - Worthington OH
International Classification:
C30B 7/10
US Classification:
117 2, 117 1, 117 68, 117 69, 117 70
Abstract:
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

High Pressure And High Temperature Production Of Diamonds

US Patent:
7241434, Jul 10, 2007
Filed:
Aug 8, 2001
Appl. No.:
10/344249
Inventors:
Thomas R. Anthony - Schenectady NY, US
Yavuz Kadioglu - Clifton Park NY, US
Suresh S. Vagarali - Columbus OH, US
Steven W. Webb - Worthington OH, US
William E. Jackson - Solon OH, US
William F. Banholzer - Niskayuna NY, US
John K. Casey - Dublin, IE
Alan C. Smith - Dublin, IE
Assignee:
Bellataire International, LLC - Worthington OH
International Classification:
C01B 31/06
US Classification:
423446, 117929, 423264
Abstract:
The present invention is directed to a method for treating discolored natural diamond, especially Type IIa diamond and Type IaA/B diamond with nitrogen as predominantly B centers, for improving its color. The method includes preblocking and preshaping a discolored natural diamond to prevent its breakage in a high pressure/high temperature (HP/HT) press, placing said discolored natural diamond in a pressure transmitting medium which is consolidated into a pill. Next, the pill is placed into a HP/HT press at elevated pressure and elevated temperature within the graphite-stable or diamond-stable range of the carbon phase diagram for a time sufficient to improve the color of said diamond. Finally, the diamond is recovered from said press. Colorless and fancy colored diamonds can be made by this method.

Method For Reducing Defect Concentration In Crystals

US Patent:
8216370, Jul 10, 2012
Filed:
Dec 12, 2005
Appl. No.:
11/300660
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
Stephen Daley Arthur - Glenville NY, US
Lionel Monty Levinson - Niskayuna NY, US
John William Lucek - Powell OH, US
Larry Burton Rowland - Scotia NY, US
Suresh Shankarappa Vagarali - Columbus OH, US
Assignee:
Momentive Performance Materials Inc. - Albany NY
International Classification:
C30B 21/04
US Classification:
117201, 117202, 118716, 118718
Abstract:
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Process Of Making A Deep Diode Solid State Transformer

US Patent:
4071378, Jan 31, 1978
Filed:
Nov 4, 1976
Appl. No.:
5/738709
Inventors:
Thomas R. Anthony - Schenectady NY
Harvey E. Cline - Schenectady NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21225
US Classification:
148 15
Abstract:
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.

Uniform Thermomigration Utilizing Sample Movement

US Patent:
4081293, Mar 28, 1978
Filed:
Oct 18, 1976
Appl. No.:
5/733238
Inventors:
Harvey E. Cline - Schenectady NY
Thomas R. Anthony - Schenectady NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21228
US Classification:
148 15
Abstract:
The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by noncentro-symmetric rotation of the solid body about an axis displaced therefrom, by centro-symmetric rotation of the solid body, by translation of the solid body, by a combination of centro-symmetric rotation and translation of the solid body or by a combination of noncentro-symmetric rotation and translation of the solid body while being heated by a suitable heat source.

Deep Buried Layers For Semiconductor Devices

US Patent:
3990093, Nov 2, 1976
Filed:
Feb 26, 1975
Appl. No.:
5/553170
Inventors:
Harvey E. Cline - Schenectady NY
Thomas R. Anthony - Schenectady NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 2978
H01L 2906
H01L 2904
H01L 2348
US Classification:
357 60
Abstract:
A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.

Possible Relatives

Cynthia A Anthony  David Anthony  Davina R Anthony  Dawn Y Anthony  Daisy E Anthony  Dale S Anthony  Damien J Anthony  Thomas D Johnson  Thomas Stamps  Thomas W Stancil 

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