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Us Patents

Probe For Testing Semiconductor Devices With Features That Increase Stress Tolerance

US Patent:
7772859, Aug 10, 2010
Filed:
Mar 4, 2008
Appl. No.:
12/042295
Inventors:
Melvin Khoo - San Gabriel CA, US
Nim Tea - Orange CA, US
Ting Hu - Monrovia CA, US
Zhiyong An - Los Angles CA, US
Assignee:
Touchdown Technologies, Inc. - Baldwin Park CA
International Classification:
G01R 31/02
US Classification:
324754, 324762
Abstract:
A novel probe design is presented that increases a probe tolerance to stress fractures. The probe includes a base, a torsion element connected to the base, and a second element connected to the torsion element through a union angle. The union angle includes an interface between the torsion element and the second element, and the edge of the interface is shaped to diffuse stress. What is further-disclosed are three features that increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

Probe For Testing Semiconductor Devices

US Patent:
8344748, Jan 1, 2013
Filed:
Jan 25, 2010
Appl. No.:
12/693428
Inventors:
Melvin Khoo - San Gabriel CA, US
Ting Hu - Monrovia CA, US
Matthew Losey - Alta Loma CA, US
Assignee:
Advantest America, Inc. - San Jose CA
International Classification:
G01R 31/00
US Classification:
32475507, 32475504, 32475603
Abstract:
A novel hybrid probe design is presented that comprises a torsion element and a bending element. These elements allow the probe to store the displacement energy as torsion or as bending. The novel hybrid probe comprises a probe base, a torsion element, a bending element, and a probe tip. The probe elastically deforms to absorb the displacement energy as the probe tip contacts the DUT contact pad. The bending element absorbs some of the displacement energy through bending. Because the torsion element and the bending element join at an angle between −90 degrees and 90 degrees, a portion of the displacement energy is transferred to the torsion element causing it to twist (torque). The torsion element can also bend to accommodate the storage of energy through torsion and bending. Also, adjusting the position of a pivot can be manipulated to alter the energy absorption characteristics of the probe. One or more additional angular elements may be added to change the energy absorption characteristics of the probe.

Hybrid Probe For Testing Semiconductor Devices

US Patent:
7589542, Sep 15, 2009
Filed:
Apr 12, 2007
Appl. No.:
11/734434
Inventors:
Melvin Khoo - San Gabriel CA, US
Nim Tea - Orange CA, US
Zhiyong An - Los Angeles CA, US
Ting Hu - Monrovia CA, US
Assignee:
Touchdown Technologies Inc. - Palo Alto CA
International Classification:
G01R 31/02
US Classification:
324754, 324762
Abstract:
A hybrid probe design is presented that includes a torsion element and a bending element. These elements allow the probe to store the displacement energy as torsion or as bending. The probe includes a base, a torsion element, a bending element, and a tip. The probe elastically deforms to absorb the displacement energy as the probe tip contacts the DUT contact pad. The bending element absorbs some of the displacement energy through bending. Because the torsion element and the bending element join at an angle, a portion of the displacement energy is transferred to the torsion element causing it to twist (torque). The torsion element can also bend to accommodate the storage of energy through torsion and bending. Adjusting the position of a pivot can alter the probe's energy absorption characteristics. One or more additional angular elements may be added to change the energy absorption characteristics of the probe.

Fine Pitch Probes For Semiconductor Testing, And A Method To Fabricate And Assemble Same

US Patent:
2014013, May 15, 2014
Filed:
Jan 17, 2013
Appl. No.:
13/744190
Inventors:
- Baldwin Park CA, US
Lakshmi Namburi - Baldwin Park CA, US
Ting Hu - Baldwin Park CA, US
Assignee:
ADVANTEST AMERICA, INC. - Baldwin Park CA
International Classification:
G01R 1/067
US Classification:
32475403, 295921
Abstract:
An apparatus for testing electronic devices is disclosed. The apparatus includes a plurality of probes attached to a substrate; each probe capable of elastic deformation when the probe tip comes in contact with the electronic; each probe comprising a plurality of isolated electrical vertical interconnected accesses (vias) connecting each probe tip to the substrate, such that each probe tip of the plurality is capable of conducting an electrical current from the device under test to the substrate. The plurality of probes may form a probe comb. Also disclosed is a probe comb holder that has at least one slot where the probe comb may be disposed. A method for assembling and disassembling the probe comb and probe comb holder is also disclosed which allows for geometric alignment of individual probes.

Fine Pitch Probes For Semiconductor Testing, And A Method To Fabricate And Assemble Same

US Patent:
2014013, May 15, 2014
Filed:
Jan 17, 2013
Appl. No.:
13/744194
Inventors:
- Baldwin Park CA, US
Lakshmi Namburi - Baldwin Park CA, US
Ting Hu - Baldwin Park CA, US
Assignee:
ADVANTEST AMERICA, INC. - Baldwin Park CA
International Classification:
G01R 1/067
US Classification:
32475505, 32475506
Abstract:
An apparatus for testing electronic devices is disclosed. The apparatus includes a plurality of probes attached to a substrate; each probe capable of elastic deformation when the probe tip comes in contact with the electronic; each probe comprising a plurality of isolated electrical vertical interconnected accesses (vias) connecting each probe tip to the substrate, such that each probe tip of the plurality is capable of conducting an electrical current from the device under test to the substrate. The plurality of probes may form a probe comb. Also disclosed is a probe comb holder that has at least one slot where the probe comb may be disposed. A method for assembling and disassembling the probe comb and probe comb holder is also disclosed which allows for geometric alignment of individual probes.

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