Inventors:
John J. Corcoran - Portola Valley CA
Travis N. Blalock - Charlottesville VA
Paul J. Vande Voorde - San Mateo CA
Thomas A. Knotts - Palo Alto CA
Neela B. Gaddis - Saratoga CA
Assignee:
Agilent Technologies, Inc. - Palo Alto CA
International Classification:
H01L 31332
US Classification:
438140, 438 48, 438570, 438454
Abstract:
An apparatus and a method for protecting charge storage elements from photo-induced currents in silicon integrated circuits are provided. In order to protect against photo-induced currents that are generated outside the storage node circuits themselves, an n-well guard ring is placed as closely as possible to the transistors and other elements in the storage node circuits. As a result there is a minimum of exposed silicon area in which light can produce current in areas next to the storage node circuits, and the n-well guard ring captures photo-induced currents that are generated outside the storage node circuits. In order to protect against the photo-induced currents that are generated inside the storage node circuits, an aluminum interconnect layer is placed on top of the storage node circuit, separated by an insulating layer of silicon dioxide. This creates a shield against the light and protects the storage node circuit by reflecting light away.