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Vincent Ngo1200 S 6Th St, Alhambra, CA 91801

Known as:
Bvincent Ngo Ngo Vicent

Vincent Ngo Phones & Addresses

1200 S 6Th St, Alhambra, CA 91801    626-2817626   

1835 Curtis Ave, Alhambra, CA 91803   

128 E Broadway APT B, San Gabriel, CA 91776   

3165 Avalo Dr, Hacienda Heights, CA 91745   

La Puente, CA   

Los Angeles, CA   

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Mentions for Vincent Ngo

Vincent Ngo resumes & CV records

Resumes

Vincent Ngo Photo 38

Student At Chapman University, The George L. Argyros School Of Business And Economics

Location:
Orange County, California Area
Industry:
Investment Banking
Work:
Argyros school of Business and Economics 2010 - 2010
Student
Education:
Chapman University 2010 - 2012
MBA, Finance Chapman University, The George L. Argyros School of Business and Economics 2010 - 2012
Vincent Ngo Photo 39

Senior Engineer Ii At Raytheon

Location:
Greater Los Angeles Area
Industry:
Defense & Space
Vincent Ngo Photo 40

Vincent Ngo

Location:
Greater Los Angeles Area
Industry:
Motion Pictures and Film
Vincent Ngo Photo 41

Vincent Ngo

Vincent Ngo Photo 42

Vincent Ngo - Santa Ana, CA

Work:
Reader - University of California - Berkeley, CA Sep 2014 to Dec 2014 Production - Covidien plc - Irvine, CA Jun 2013 to Aug 2013 Orange Coast College - Costa Mesa, CA Aug 2011 to Dec 2011
Teaching Assistant
Education:
University of California, Berkeley - Berkeley, CA Dec 2014
Bachelor of Science in Chemical Engineering Orange Coast College - Costa Mesa, CA May 2012
Associate of Science in Chemistry
Vincent Ngo Photo 43

Vincent Ngo

Location:
United States
Vincent Ngo Photo 44

Vincent Ngo - Hacienda Heights, CA

Work:
21st Century Insurance 1996 to 2000 21st Century Insurance 2003 to 2010
Material Damage Field Adjuster 21st Century Insurance 2000 to 2003
Total Loss Adjuster 21st Century Insurance 1996 to 2000
Office Adjuster
Vincent Ngo Photo 45

Penner

Location:
Großraum Seattle und Umgebung
Industry:
Computer Games
Education:
University of Washington
University of Washington School of Law

Publications & IP owners

Wikipedia

Vincent Ngo Photo 46

Hancock (Film)

The story was originally written by Vincent Ngo in 1996. It languished in development hell .... Vincent Ngo wrote the spec script Tonight, He Comes in 1996. ...

Us Patents

High Power Transistors

US Patent:
2022026, Aug 18, 2022
Filed:
May 5, 2022
Appl. No.:
17/662138
Inventors:
- Lowell MA, US
Vincent Ngo - Westminster CA, US
International Classification:
H01L 23/482
H01L 29/778
H01L 23/31
H01L 23/498
H01L 29/20
H01L 29/205
H01L 29/417
Abstract:
High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of contacts in parallel. Thereby, the total gate width and the power rating of a high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.

High Power Transistors

US Patent:
2019021, Jul 11, 2019
Filed:
Oct 19, 2018
Appl. No.:
16/165261
Inventors:
- Lowell MA, US
Vincent Ngo - Westminster CA, US
Assignee:
MACOM Technology Solutions Holdings, Inc. - Lowell MA
International Classification:
H01L 23/482
H01L 23/498
H01L 29/20
H01L 29/417
H01L 23/31
H01L 29/205
H01L 29/778
Abstract:
High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.

High Power Transistors

US Patent:
2018004, Feb 15, 2018
Filed:
Aug 10, 2016
Appl. No.:
15/233556
Inventors:
- Lowell MA, US
Vincent Ngo - Westminster CA, US
Assignee:
MACOM Technology Solutions Holdings, Inc. - Lowell MA
International Classification:
H01L 23/482
H01L 29/205
H01L 23/31
H01L 29/417
H01L 23/498
H01L 29/20
H01L 29/778
Abstract:
High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.

Possible Relatives

Cynthia Ngo  Dean V Ngo  Dai H Ngo  Debbie Ngo  Dam H Ngo  Dang H Ngo  Aaron Ngo  Vincent R Stanbro  Vincent Johnston 

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