Walter L Bloss, 7427930 Beechgate Dr, Rancho Palos Verdes, CA 90275
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Rancho Palos Verdes, CA
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Us Patents
Heptagonal Antenna Array
US Patent:
8314748, Nov 20, 2012
Filed:
Mar 9, 2010
Appl. No.:
12/720659
Inventors:
David A. Ksienski - Los Angeles CA, US
Walter L. Bloss - Rancho Palos Verdes CA, US
James P. McKay - Hermosa Beach CA, US
Walter L. Bloss - Rancho Palos Verdes CA, US
James P. McKay - Hermosa Beach CA, US
Assignee:
The Aerospace Corporation - El Segundo CA
International Classification:
H01Q 21/00
US Classification:
343844, 343705, 343853, 2441726
Abstract:
An antenna system includes a heptagonal antenna array having one center antenna element and seven circumferentially surrounding antenna elements offering improved near and far sidelobe rejection, which is well suited for mechanically-gimbaled and time delayed electrical steering antenna applications.
Heptagonal Antenna Array System
US Patent:
2009000, Jan 1, 2009
Filed:
Jun 26, 2007
Appl. No.:
11/821931
Inventors:
Walter L. Bloss - Rancho Palos Verdes CA, US
David A. Ksienski - Los Angeles CA, US
James P. McKay - Hermosa Beach CA, US
David A. Ksienski - Los Angeles CA, US
James P. McKay - Hermosa Beach CA, US
International Classification:
H01Q 3/02
H01Q 13/02
H01Q 21/00
H01Q 13/02
H01Q 21/00
US Classification:
343758, 343781 R, 343824
Abstract:
An antenna system includes a heptagonal antenna array having one center antenna element and seven circumferentially surrounding antenna elements offering improved near and far sidelobe rejection, which is well suited for mechanically-gimbaled and time delayed electrical steering antenna applications.
Radiation Hard Gaas High Electron Mobility Transistor
US Patent:
5028968, Jul 2, 1991
Filed:
Jan 2, 1990
Appl. No.:
7/460206
Inventors:
Michael J. O'Loughlin - Irvine CA
Richard J. Krantz - Torrance CA
Walter L. Bloss - Rancho Palos Verdes CA
Richard J. Krantz - Torrance CA
Walter L. Bloss - Rancho Palos Verdes CA
Assignee:
The Aerospace Corporation - El Segundo CA
International Classification:
H01L 29161
US Classification:
357 16
Abstract:
The incorporation of a GaAs layer that is intentionally p-doped into a standard HEMT device structure has been shown to produce a HEMT transistor with greatly enhanced radiation hardness under exposure to neutron radiation.
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