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Wei Gao, 643635 Huyton Ct, Charlotte, NC 28215

Known as:
Wel Gao Wei Liu Gao Wei
Related to:
Pin Kang Zhikai Gao

Wei Gao Phones & Addresses

3635 Huyton Ct, Charlotte, NC 28215   

Bolingbrook, IL   

Wheat Ridge, CO   

2402 180Th Ave, Vancouver, WA 98683    360-8821086   

3100 168Th Ave, Vancouver, WA 98683   

Raleigh, NC   

Work

Company: Epir 2010 Position: Senior photovoltaic engineer

Education

School / High School: University of Abertay- Dundee 1996 Specialities: Ph.D. in Electronic and Electrical Engineering

Ranks

Licence: New York - Currently registered Date: 2007
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Mentions for Wei Gao

Career records & work history

Lawyers & Attorneys

Wei Gao Photo 1

Wei Gao - Lawyer

Licenses:
New York - Currently registered 2007
Education:
Ucla

Medicine Doctors

Wei S. Gao

Specialties:
Family Medicine
Work:
Wei S Gao MD
3501 N Macarthur Blvd STE 330, Irving, TX 75062
972-6072340 (phone) 972-6072347 (fax)
Education:
Medical School
Shanghai Second Med Univ, Shanghai City, Shanghai, China
Graduated: 1984
Procedures:
Cardiac Stress Test, Electrocardiogram (EKG or ECG), Pulmonary Function Tests, Skin Tags Removal, Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding, Acne, Acute Conjunctivitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Anxiety Phobic Disorders, Atopic Dermatitis, Constipation, Gastritis and Duodenitis, Hearing Loss, Herpes Simplex, Otitis Media, Abdominal Hernia, Acute Bronchitis, Alopecia Areata, Anal Fissure, Anal or Rectal Abscess, Anemia, Anxiety Dissociative and Somatoform Disorders, Attention Deficit Disorder (ADD), Autism, Bell's Palsy, Benign Paroxysmal Positional Vertigo, Benign Prostatic Hypertrophy, Benign Thyroid Diseases, Bipolar Disorder, Breast Disorders, Bronchial Asthma, Burns, Calculus of the Urinary System, Candidiasis, Candidiasis of Vulva and Vagina, Cardiac Arrhythmia, Carpel Tunnel Syndrome, Cholelethiasis or Cholecystitis, Chronic Sinusitis, Cirrhosis, Contact Dermatitis, Croup, Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Diverticulitis, Emphysema, Erectile Dysfunction (ED), Female Infertility, Fractures, Dislocations, Derangement, and Sprains, Gastroesophageal Reflux Disease (GERD), Genital HPV, Gingival and Periodontal Diseases, Gonorrhea, Gout, Hallux Valgus, Hemorrhoids, Herpes Genitalis, Herpes Zoster, HIV Infection, Hypertension (HTN), Hypothyroidism, Infectious Liver Disease, Influenza, Inguinal Hernia, Intervertebral Disc Degeneration, Intracranial Injury, Iron Deficiency Anemia, Irritable Bowel Syndrome (IBS), Menopausal and Postmenopausal Disorders, Migraine Headache, Non-Toxic Goiter, Obsessive-Compulsive Disorder (OCD), Obstructive Sleep Apnea, Orbital Infection, Osteoarthritis, Osteoporosis, Overweight and Obesity, Peptic Ulcer Disease, Peripheral Nerve Disorders, Plantar Fascitis, Plantar Warts, Pneumonia, Prostatitis, Psoriasis, Pulmonary Tuberculosis (TB), Restless Leg Syndrome, Rheumatoid Arthritis, Rosacea, Scoliosis or Kyphoscoliosis, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency, Tempromandibular Joint Disorders (TMJ), Tension Headache, Tinea Pedis, Tinea Unguium, Undescended and Retractile Testicle, Urinary Incontinence, Urinary Tract Infection (UT), Uterine Leiomyoma, Varicose Veins, Vitamin D Deficiency
Description:
Dr. Wei S. Gao graduated from the Shanghai Second Med University, Shanghai, China in 1984. He works in Irving, TX and specializes in Family Medicine. Dr. Gao is affiliated with UT Southwestern Medical Center Zale Lipshy University Hospital.
Wei Gao Photo 2

Wei Dong Gao

Specialties:
Anesthesiology
Family Medicine
Critical Care Medicine
Education:
Shanghai Jiao Tong University (1984)

Wei Gao resumes & CV records

Resumes

Wei Gao Photo 40

Graduate Student At University Of California, San Diego

Position:
HHMI International Student Research Fellow, Jacobs Fellow at University of California, San Diego
Location:
La Jolla, California
Industry:
Nanotechnology
Work:
University of California, San Diego - University of California, San Diego since 2009
HHMI International Student Research Fellow, Jacobs Fellow
Education:
University of California, San Diego 2009 - 2014
Ph.D., Chemical Engineering Tsinghua University 2007 - 2009
MS, MEMS, Precision Instruments Huazhong University of Science and Technology 2003 - 2007
Bachelor's degree, Mechanical Engineering
Skills:
Nanotechnology, Nanomaterials, Electrochemistry, Microfabrication, AFM, Scanning Electron Microscopy, CVD, TEM, Biosensors, Sputtering, Thin Films, Electron Microscopy, Microfluidics, Characterization, Chemistry, Nanoparticles, Biomedical Engineering
Interests:
Micro/Nano Machines, Nanomaterials, Polymers, Drug Delivery
Honor & Awards:
04/2013　MRS Graduate Student Silver Award 02/2013　Chinese Government Award for Outstanding Self-Financed Students Abroad 07/2012　HHMI International Student Research Fellowship 09/2009　Jacobs Fellowship, University of California, San Diego 11/2008　Excellent Graduate Leader, Tsinghua University 10/2008　Comprehensive outstanding Scholarship, Tsinghua University (Top10%) 06/2007　Outstanding Graduate of University, Huazhong University of Science and Technology 10/2005　Best Creative Design, Flying Leopard Cup Robot Contest 11/2005　FESTO Scholarship, Sponsored by Festo (China) Ltd. (German Co.) 09/2005　Academic Excellence Award, Huazhong University of Science and Technology (Top1%) 10/2004　People's Scholarship, Huazhong University of Science and Technology
Languages:
English
Chinese
Wei Gao Photo 41

Wei Gao

Location:
United States
Wei Gao Photo 42

Ph.d. Candidate In Rice University At Rice University

Location:
United States
Wei Gao Photo 43

Assistant Professor At Unc-Chapel Hill

Position:
Assistant Professor at UNC-Chapel Hill
Location:
Chapel Hill, North Carolina
Industry:
Research
Work:
UNC-Chapel Hill - UNC-Chapel hill since Jun 2011
Assistant Professor
Education:
University of North Carolina at Chapel Hill 2006 - 2010
PhD, Biomedical Engineering Tianjin University
BS, Biomedical Engineering Tianjin University
MS, Biomedical Engineering Tianjin University
BS, Scientific English
Interests:
Functional and Structural Brain Development Normal/Diseased Brain Functioning Mechanism Brain Imaging Design Optimization
Wei Gao Photo 44

Wei Gao - Bolingbrook, IL

Work:
EPIR 2010 to 2000
Senior photovoltaic engineer EPIR - Chicago, IL 2012 to 2013
Research Associate Professor Solasta Inc - Newton, MA 2009 to 2010
Senior photovoltaic engineer Sharp Labs of America - Camas, WA 2001 to 2009
Senior research engineer North Carolina State University - Raleigh, NC 2000 to 2001
Research Associate National Renewable Energy Laboratory - Golden, CO 1996 to 2000
Experimental Researcher University of Northumbria at Newcastle - Newcastle upon Tyne 1991 to 1992
Visiting Researcher General Research Institute for Non 1985 to 1991
Pilot Production Engineer
Education:
University of Abertay - Dundee 1996
Ph.D. in Electronic and Electrical Engineering General Research Institute for Non-ferrous Metals 1985
M.Sc. Tsinghua University 1982
B.S. in Solid State Physics and Materiasl Science
Wei Gao Photo 45

Manager At Pfizer Pharmaceuticals

Position:
Associate Principal Scientist - Clinical PK/PD at Merck
Location:
Groton, Connecticut
Industry:
Pharmaceuticals
Work:
Merck - West Point, PA since Oct 2012
Associate Principal Scientist - Clinical PK/PD Pfizer Pharmaceuticals Oct 2010 - Sep 2012
Manager - Clinical Pharmacology
Education:
State University of New York at Buffalo 2005 - 2010
Peking University
Skills:
Clinical Development, Pharmacodynamics, Clinical Pharmacology, Drug Development, Clinical Study Design

Publications & IP owners

Us Patents

Method Of Depositing A Conductive Niobium Monoxide Film For Mosfet Gates

US Patent:
6825106, Nov 30, 2004
Filed:
Sep 30, 2003
Appl. No.:
10/676987
Inventors:
Wei Gao - Vancouver WA
Yoshi Ono - Camas WA
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 213205
US Classification:
438585, 438197, 438608, 438648
Abstract:
A method is provided to deposit niobium monoxide gates. An elemental metal target, or a composite niobium monoxide target is provided within a sputtering chamber. A substrate with gate dielectric, for example silicon dioxide or a high-k gate dielectric, is provided in the sputtering chamber. The sputtering power and oxygen partial pressure within the chamber is set to deposit a film comprising niobium monoxide, without excess amounts of elemental niobium, NbO insulator, or Nb O insulator. The deposition method may be incorporated into a standard CMOS fabrication process, or a replacement gate CMOS process.

Mosfet Threshold Voltage Tuning With Metal Gate Stack Control

US Patent:
6861712, Mar 1, 2005
Filed:
Jan 15, 2003
Appl. No.:
10/345744
Inventors:
Wei Gao - Vancouver WA, US
Yoshi Ono - Camas WA, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L029/76
H01L029/94
H01L031/062
H01L031/113
H01L031/119
US Classification:
257369, 257407
Abstract:
A stacked metal gate MOSFET and fabrication method are provided. The method comprises: forming a gate oxide layer overlying a channel region; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer; and, establishing a gate work function in response to the combination of the first and second thicknesses. In one example, the first metal layer has a thickness of less than about 1. 5 nanometers (nm) the second metal layer has a thickness greater than about 10 nm. Then, establishing a gate work function includes establishing a gate work function substantially in response to the second metal second thickness. Alternately, the first metal thickness is greater than about 20 nm. Then, the gate work function is established substantially in response to the first metal thickness.

System And Method For Integrating Multiple Metal Gates For Cmos Applications

US Patent:
6873048, Mar 29, 2005
Filed:
Feb 27, 2003
Appl. No.:
10/376795
Inventors:
Wei Gao - Vancouver WA, US
Yoshi Ono - Camas WA, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L023/48
US Classification:
257750, 257764, 257748, 257736, 257763, 257741
Abstract:
A dual-gate MOSFET with metal gates and a method for setting threshold voltage in such a MOSFET is provided. The method comprises: forming a gate oxide layer overlying first and second channel regions; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer first thickness; selectively removing the second metal layer overlying the first channel region; forming a third metal layer; establishing a first MOSFET with a gate work function responsive to the thicknesses of the first and third metal layer overlying the first channel region; and, establishing a second MOSFET, complementary to the first MOSFET, with a gate work function responsive to the combination of the thicknesses of the first, second, and third metal layers overlying the second channel region.

Methods Of Forming A Microlens Array Over A Substrate Employing A Cmp Stop

US Patent:
7029944, Apr 18, 2006
Filed:
Sep 30, 2004
Appl. No.:
10/956789
Inventors:
Yoshi Ono - Camas WA, US
Wei Gao - Vancouver WA, US
David R. Evans - Beaverton OR, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 21/00
US Classification:
438 69, 438 60, 438 73
Abstract:
A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop overlying the transparent material; depositing a lens-shaping layer overlying the CMP stop layer; depositing and patterning a photoresist layer overlying the lens-shaping layer to form openings to expose the lens-shaping layer; introducing a first isotropic etchant into the openings and etching the lens-shaping layer where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the lens-shaping layer to a second isotropic etchant to increase the radius of the lens shapes; transferring the lens shape through the CMP stop layer into the transparent material using an anisotropic etch; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. Planarizing the lens material using CMP and stopping at the CMP stop layer.

Method Of Fabricating A P-Type Cao-Doped Srcuothin Film

US Patent:
7087526, Aug 8, 2006
Filed:
Oct 27, 2005
Appl. No.:
11/261020
Inventors:
Wei-Wei Zhuang - Vancouver WA, US
Wei Gao - Vancouver WA, US
Yoshi Ono - Camas WA, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 23/02
US Classification:
438681, 438782, 438E51022, 257 79
Abstract:
A method of CaO-doped SrCuOspin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCuOprecursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCuOlayer thereon.

Mosfet Structures With Conductive Niobium Oxide Gates

US Patent:
7129552, Oct 31, 2006
Filed:
Sep 30, 2003
Appl. No.:
10/677006
Inventors:
Wei Gao - Vancouver WA, US
Yoshi Ono - Camas WA, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 29/76
H01L 29/94
US Classification:
257411, 257412
Abstract:
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.

Electroluminescent Device

US Patent:
7208768, Apr 24, 2007
Filed:
Apr 30, 2004
Appl. No.:
10/836669
Inventors:
Yoshi Ono - Camas WA, US
Wei Gao - Vancouver WA, US
Osamu Nishio - Nara, JP
Keizo Sakiyama - Nara Pref., JP
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 27/15
US Classification:
257 79, 438 22, 257E33001, 977950
Abstract:
A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.

Rare Earth Element-Doped Silicon/Silicon Dioxide Lattice Structure

US Patent:
7256426, Aug 14, 2007
Filed:
Jan 19, 2005
Appl. No.:
11/039463
Inventors:
Tingkai Li - Vancouver WA, US
Wei Gao - Vancouver WA, US
Yoshi Ono - Camas WA, US
Sheng Teng Hsu - Camas WA, US
Assignee:
Sharp Laboratories of America, Inc. - Camas WA
International Classification:
H01L 27/15
H01L 21/00
US Classification:
257 80, 257103, 257222, 438 22, 438 29, 438 30, 438 45
Abstract:
Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with the rare earth element; DC sputtering a layer of SiO2 overlying the rare earth-doped Si; forming a lattice structure; annealing; and, in response to the annealing, forming nanocrystals in the rare-earth doped Si having a grain size in the range of 1 to 5 nanometers (nm). In one aspect, the rare earth element and Si are co-DC sputtered. Typically, the steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality (5-60) of alternating SiO2 and rare earth element-doped Si layers.

Amazon

Wei Gao Photo 50

Daily Talking Prenatal Education Book (Chinese Edition)

Author:
Gao Wei Na
Publisher:
Jilin Science and Technology Press
Binding:
Paperback
Pages:
289
ISBN #:
7538448705
EAN Code:
9787538448702
Daily Talking Prenatal Education Book prepares 280 days prenatal education for expectant mothers, covering nutrition, sports, music, nursery rhymes, poems, famous paintings, dialogues, stories, touching and meditation. Based on phased development characteristic of a fetus, it provides with prenatal ...
Wei Gao Photo 51

Boundary Element Programming In Mechanics

Author:
Xiao-Wei Gao, Trevor G. Davies
Publisher:
Cambridge University Press
Binding:
Paperback
Pages:
272
ISBN #:
1107400252
EAN Code:
9781107400252
This monograph describes the application of boundary element methods (BEM) in solid mechanics, beginning with basic theory and then explaining the numerical implementation of BEM in nonlinear stress analysis. In addition, the authors have developed state-of-the-art BEM source code, available for the...
Wei Gao Photo 52

Precision Nanometrology: Sensors And Measuring Systems For Nanomanufacturing (Springer Series In Advanced Manufacturing)

Author:
Wei Gao
Publisher:
Springer
Binding:
Hardcover
Pages:
354
ISBN #:
1849962537
EAN Code:
9781849962537
Precision Nanometrology describes the new field of precision nanometrology, which plays an important part in nanoscale manufacturing of semiconductors, optical elements, precision parts and similar items. It pays particular attention to the measurement of surface forms of precision workpieces and to...
Wei Gao Photo 53

Equity And Full Participation For Individuals With Severe Disabilities: A Vision For The Future

Publisher:
Brookes Publishing
Binding:
Paperback
Pages:
448
ISBN #:
1598572709
EAN Code:
9781598572704
Access the NEW ONLINE COMPANION MATERIALS now!
Wei Gao Photo 54

痛苦是化了妆的礼物

Author:
高伟
Publisher:
Jiuzhou Press
Binding:
Paperback
ISBN #:
7510834678
EAN Code:
9787510834677
Wei Gao Photo 55

Earth Science Satellite Remote Sensing (Volume 1)

Publisher:
Springer
Binding:
Hardcover
Pages:
418
ISBN #:
3540356061
EAN Code:
9783540356066
This book provides information on the Earth science remote sensing data information and data format such as HDF-EOS. It evaluates the current data processing approaches and introduces data searching and ordering from different public domains. It further explores the remote sensing and GIS migration ...
Wei Gao Photo 56

Uv Radiation In Global Climate Change: Measurements, Modeling And Effects On Ecosystems

Publisher:
Springer
Binding:
Hardcover
Pages:
544
ISBN #:
3642033121
EAN Code:
9783642033124
Numerous studies report that ultraviolet (UV) radiation is harmful to living organisms and detrimental to human health. Growing concerns regarding the increased levels of UV-B radiation that reach the earth's surface have led to the development of ground- and space-based measurement programs. Furthe...
Wei Gao Photo 57

Contributions On Topological Indices Of Chemical Graph Theory

Author:
Wei Gao, Li Liang, Yun Gao
Publisher:
LAP LAMBERT Academic Publishing
Binding:
Paperback
Pages:
52
ISBN #:
3659828351
EAN Code:
9783659828355
Chemical compounds and drugs are often modeled as graphs where each vertex represents an atom of molecule and covalent bounds between atoms are represented by edges between the corresponding vertices. This graph derived from a chemical compounds is often called its molecular graph and can be differe...

Isbn (Books And Publications)

Ultraviolet Ground- And Space-Based Measurements, Models, And Effects: 30 July-1 August 2001, San Diego, Usa

Author:
Wei Gao
ISBN #:
0819441961

Ecosystems Dynamics, Ecosystem-Society Interactions, And Remote Sensing Applications For Semi-Arid And Arid Land

Author:
Wei Gao
ISBN #:
0819446769

Ultraviolet Ground And Space-Based Measurements, Models, And Effects Ii

Author:
Wei Gao
ISBN #:
0819446823

Ultraviolet Ground-And Space-Based Measurements, Models, And Effects Iii

Author:
Wei Gao
ISBN #:
0819450294

Remote Sensinf And Modeling Of Ecosystems For Sustainability

Author:
Wei Gao
ISBN #:
0819454826

Remote Sensing And Modeling Of Ecosystems For Sustainability 2: 2-3 August, 2005, San Diego Ca, Usa

Author:
Wei Gao
ISBN #:
0819458899

Remote Sensing And Modeling Of Ecosystems For Sustainability 3

Author:
Wei Gao
ISBN #:
0819463779

Earth Science Satellite Remote Sensing: Science And Instruments

Author:
Wei Gao
ISBN #:
3540356061

Public records

Vehicle Records

Wei Gao

Address:
2402 SE 180 Ct, Vancouver, WA 98683
Phone:
360-8821086
VIN:
KNAFE161075004755
Make:
KIA
Model:
SPECTRA
Year:
2007

Possible Relatives

David Z Gao  Da Gao  Dan Gao  Deng Z Gao  Diping Gao  Fei F Gao  Feng Gao  Wei Y Kam  Wei E Lam  Wei J Lee 

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