William J Bintz, 67316 Pinewood Shrs, Wakefield, NH 03830

2007008, Apr 19, 2007

Sep 30, 2005

11/241406

Shengwu Chang - South Hamilton MA, US
Isao Tsunoda - Yokohama, JP
Dennis Rodier - Francestown NH, US
Joseph Olson - Beverly MA, US
Donna Smatlak - Belmont MA, US
Damian Brennan - Gloucester MA, US
William Bintz - Londonderry NH, US

H01J 37/08

250492210

The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

2023003, Feb 9, 2023

Aug 5, 2022

17/881833

- Beverly MA, US
James S. DeLuca - Beverly MA, US
William Bintz - Londonderry NH, US

H01J 37/317
H01J 37/08
H01J 37/20

An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.

2021024, Aug 12, 2021

Feb 5, 2021

17/168897

- Beverly MA, US
Shu Satoh - Byfield MA, US
Genise Bonacorsi - Newburyport MA, US
William Bintz - Londonderry NH, US

H01J 37/317
H01J 37/08

A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

2015031, Nov 5, 2015

Apr 21, 2015

14/692395

- Beverly MA, US
William Bintz - Londonderry NH, US

H01J 37/147
H01J 37/317
H01J 37/20

An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.