BackgroundCheck.run
Search For

William H Gascoyne, 66Aptos, CA

William Gascoyne Phones & Addresses

Aptos, CA   

933 Northrup St, San Jose, CA 95126    408-2983020   

935 Northrup St, San Jose, CA 95126   

Mountain View, CA   

Saratoga, CA   

Worcester, MA   

Santa Clara, CA   

Castroville, CA   

Kerman, CA   

Mentions for William H Gascoyne

William Gascoyne resumes & CV records

Resumes

William Gascoyne Photo 10

William Gascoyne

William Gascoyne Photo 11

William Gascoyne

Location:
United States

Publications & IP owners

Wikipedia

William Gascoyne Photo 12

Lord William Cecil (Bishop)

Lord Rupert Ernest William Gascoyne-Cecil (9 March 186323 June 1936) (nicknamed 'Fish') was Bishop of Exeter from 1916 to 1936. Cecil was something of an eccentric.
William Gascoyne Photo 13

James Gascoynececil 2Nd Marquess Of Salisbury The ...

James Brownlow William Gascoyne-Cecil, 2nd Marquess of Salisbury, KG, PC (17 April 1791 12 April 1868), styled Viscount Cranborne until 1823, was a British Conservative politician

Us Patents

Semiconductor Package Electrostatic Discharge Damage Protection

US Patent:
5552951, Sep 3, 1996
Filed:
Jun 5, 1995
Appl. No.:
8/461133
Inventors:
Nicholas F. Pasch - Pacifica CA
William Gascoyne - San Jose CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H02H 322
US Classification:
361 56
Abstract:
A semiconductor circuit package includes features forming an electrostatic charge distribution network having nodes which are defined by the electrical contact leads of the package for the semiconductor circuit, and which are effectively connected with one another by spark-gaps. In one embodiment electrical leads of the package are provided with pointed protrusions lying in the plane of the electrical leads. Accordingly, an inadvertent electrostatic discharge is distributed throughout the semiconductor circuit at safe voltage levels determined by the characteristics of the spark gaps of the charge distribution network.

Process Monitor Circuit

US Patent:
5068547, Nov 26, 1991
Filed:
Sep 5, 1990
Appl. No.:
7/577945
Inventors:
William H. Gascoyne - San Jose CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H03K 513
H03K 5159
US Classification:
307443
Abstract:
In accordance with the present invention, a process monitor circuit and a method for monitoring a process are provided. The process monitor circuit provides first and second logic paths, the first logic path having a delay sensitive to whether the input logic transition is from logic high to logic low, or from logic low to logic high. The second logic path has substantially equal delays for either logic state transition. The two differences in delay between the first and second logic paths under the two logic state transitions are used to monitor the process steps for manufacturing the P and N transistors.

Protection Of Proprietary Circuit Designs During Gate Level Static Timing Analysis

US Patent:
5886900, Mar 23, 1999
Filed:
Sep 25, 1996
Appl. No.:
8/719508
Inventors:
William H. Gascoyne - San Jose CA
Jay S. Hidy - Saratoga CA
Assignee:
LSI Logic Gorporation
International Classification:
G06F 1750
US Classification:
364490
Abstract:
A method for providing a nonfunctional circuit design for evaluation in accordance with a static timing analysis is provided herein. The method initially generates a netlist, and then creates a standard delay format (SDF) file from the netlist. The standard delay format file contains occurrence names and delays associated with all elements of the design. The method subsequently selects elements of the design, alters the functionality of each selected element, and alters the standard delay format file entries corresponding to each selected element. The functional alteration of selected elements comprises altering an AND gate to be an OR gate, altering a NAND gate to be a NOR gate, altering an OR gate to be an AND gate, altering a NOR gate to be a NAND gate, altering an XOR to be an XNOR, and/or altering an XNOR to be an XOR in a predetermined manner. The method may accomplish random selection using a random number generator, or alternatively by visually selecting various design elements and altering the functionality of the gate as described. An alternative embodiment is disclosed wherein all elements having similar timing characteristics and different functionality are given identical functionality, such as all AND gates are changed to OR gates, so that all AND and OR gates have OR functionality.

Semiconductor Package Electrostatic Discharge Damage Protection

US Patent:
5424896, Jun 13, 1995
Filed:
Aug 12, 1993
Appl. No.:
8/105833
Inventors:
Nicholas F. Pasch - Pacifica CA
William Gascoyne - San Jose CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H02H 322
US Classification:
361 56
Abstract:
A semiconductor circuit package includes features forming an electrostatic charge distribution network having nodes which are defined by the electrical contact leads of the package for the semiconductor circuit, and which are effectively connected with one another by spark-gaps. In one embodiment electrical leads of the package are provided with pointed protrusions lying in the plane of the electrical leads. Accordingly, an inadvertent electrostatic discharge is distributed throughout the semiconductor circuit at safe voltage levels determined by the characteristics of the spark gaps of the charge distribution network.

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.