Xiwang Qi, 575101 Michelle Dr, Scottsdale, AZ 85254

7749900, Jul 6, 2010

Sep 30, 2008

12/242414

Yonggang Li - Chandler AZ, US
Amruthavalli P. Alur - Chandler AZ, US
Devarajan Balaraman - Chandler AZ, US
Xiwang Qi - Scottsdale AZ, US
Charan K. Gurumurthy - Higley AZ, US

Intel Corporation - Santa Clara CA

H01L 21/02

438667, 438123, 257E21002

A semiconductor package comprises a semiconductor substrate that may comprise a core. The core may comprise one or more materials selected from a group comprising ceramics and glass dielectrics. The package further comprises a set of one or more inner conductive elements that is provided on the core, a set of one or more outer conductive elements that is provided on an outer side of the substrate, and a semiconductor die to couple to the substrate via one or more of the outer conductive elements. Example materials for the core may comprise one or more from alumina, zirconia, carbides, nitrides, fused silica, quartz, sapphire, and Pyrex. A laser may be used to drill one or more plated through holes to couple an inner conductive element to an outer conductive element. A dielectric layer may be formed in the substrate to insulate an outer conductive element from the core or an inner conductive element.

8021795, Sep 20, 2011

Jan 30, 2006

11/307265

Xiwang Qi - Scottsdale AZ, US
Rong Fan - Rancho Palos Verdes CA, US
Andrew Philip Shapiro - Schenectady NY, US
Dacong Weng - Rancho Palos Verdes CA, US
Jie Guan - Torrance CA, US
James Daniel Power - Santa Monica CA, US
Stanley F. Simpson - Rancho Paolo Verdes CA, US

General Electric Company - Schenectady NY

H01M 8/12

429467, 429468, 429469, 429479, 429488

A method for manufacturing a solid oxide electrochemical device comprising disposing electrolyte between a first electrode and a second electrode, applying a bonding agent between the first electrode and a first interconnect, applying a sealing agent between the first electrode and the first interconnect, disposing a second interconnect adjacent to the second electrode, heating the first interconnect, the first electrode, the electrolyte, the second electrode, the second interconnect, the bonding agent, and the sealing agent to at least one intermediate temperature for at least one intermediate length of time, and then to a curing temperature, for a curing time, effective to bond and seal the first electrode to the first interconnect, wherein the at least one intermediate temperature is less than the curing temperature.

8456016, Jun 4, 2013

Mar 23, 2010

12/729821

Yonggang Li - Chandler AZ, US
Amruthavalli P. Alur - Chandler AZ, US
Devarajan Balaraman - Chandler AZ, US
Xiwang Qi - Scottsdale AZ, US
Charan K. Gurumurthy - Higley AZ, US

Intel Corporation - Santa Clara CA

H01L 23/48

257774, 257E23011

A semiconductor package comprises a semiconductor substrate that may comprise a core. The core may comprise one or more materials selected from a group comprising ceramics and glass dielectrics. The package further comprises a set of one or more inner conductive elements that is provided on the core, a set of one or more outer conductive elements that is provided on an outer side of the substrate, and a semiconductor die to couple to the substrate via one or more of the outer conductive elements. Example materials for the core may comprise one or more from alumina, zirconia, carbides, nitrides, fused silica, quartz, sapphire, and Pyrex. A laser may be used to drill one or more plated through holes to couple an inner conductive element to an outer conductive element. A dielectric layer may be formed in the substrate to insulate an outer conductive element from the core or an inner conductive element.

8557727, Oct 15, 2013

Dec 7, 2010

12/962508

Qinghua Yin - Tempe AZ, US
Xiwang Qi - Scottsdale AZ, US
Maximilian A. Biberger - Scottsdale AZ, US

SDCmaterials, Inc. - Tempe AZ

B01J 21/00
B01J 23/00
B01J 23/08
B01J 23/42
B01J 23/44
B01J 25/00
B01J 29/00
B01J 31/00

502167, 502100, 502150, 502172, 502300, 502334, 502339, 50252714, 50252724, 977773, 977810, 977811, 977840, 977963

A method of forming a catalyst, comprising: providing a plurality of support particles and a plurality of mobility-inhibiting particles, wherein each support particle in the plurality of support particles is bonded with its own catalytic particle; and bonding the plurality of mobility-inhibiting particles to the plurality of support particles, wherein each support particle is separated from every other support particle in the plurality of support particles by at least one of the mobility-inhibiting particles, and wherein the mobility-inhibiting particles are configured to prevent the catalytic particles from moving from one support particle to another support particle.

2009025, Oct 8, 2009

Apr 4, 2008

12/098311

Xiwang Qi - Scottsdale AZ, US
Charan K. Gurumurthy - Higley AZ, US
Tamil Selvy Selvamuniandy - Chandler AZ, US
Isao Yamada - Tokyo, JP

H01L 23/48
H01L 21/00

257786, 438121, 257E23015

A semiconductor package comprises a substrate that utilizes one or more pins to form external interconnects. The pins are bonded to bonding pads on the substrate by solder. The pins may each has a pin head that may have a bonding surface, wherein the bonding surface may comprises a center portion and a side portion that is tapered away relative to the center portion. In some embodiments, the bonding surface may comprise a round shape. In some embodiments, a gas escape path may be provided by the shape of the bonding surface to increase pin pull strength and/or solder strength. The package may further comprise a surface finish that may comprise a palladium layer with a reduced thickness to reduce the amount of palladium based IMC precipitation into the solder.

2011014, Jun 16, 2011

Dec 7, 2010

12/962473

Qinghua Yin - Tempe AZ, US
Xiwang Qi - Scottsdale AZ, US
Eliseo Ruiz - Queen Creek AZ, US

SDCMATERIALS, INC. - Tempe AZ

B01J 37/34
B01J 35/02
B01J 23/42
B01J 21/04
B01J 23/72
B82Y 30/00
B82Y 40/00

502 5, 502100, 502339, 502355, 502334, 502331, 502300, 977775, 977840

A nanoparticle comprises a nano-active material and a nano-support. In some embodiments, the nano-active material is platinum and the nano-support is alumina. Pinning and affixing the nano-active material to the nano-support is achieved by using a high temperature condensation technology. In some embodiments, the high temperature condensation technology is plasma. Typically, a quantity of platinum and a quantity of alumina are loaded into a plasma gun. When the nano-active material bonds with the nano-support, an interface between the nano-active material and the nano-support forms. The interface is a platinum alumina metallic compound, which dramatically changes an ability for the nano-active material to move around on the surface of the nano-support, providing a better bond than that of a wet catalyst. Alternatively, a quantity of carbon is also loaded into the plasma gun. When the nano-active material bonds with the nano-support, the interface formed comprises a platinum copper intermetallic compound, which provides an even stronger bond.

2011014, Jun 16, 2011

Dec 7, 2010

12/962518

Qinghua Yin - Tempe AZ, US
Xiwang Qi - Scottsdale AZ, US
Maximilian A. Biberger - Scottsdale AZ, US
David Leamon - Gilbert AZ, US

SDCMATERIALS, INC. - Tempe AZ

B01J 23/42
B01J 35/02
B01J 21/04
B01J 21/08
B01J 21/06
B01J 21/18
B01J 21/12
C23C 16/52
B82Y 30/00

502180, 502100, 502355, 502232, 502350, 502263, 502339, 118715, 977775

A method of tuning the size of an nano-active material on a nano-carrier material comprising: providing a starting portion of a carrier material and a starting portion of an active material in a first ratio; adjusting the first ratio, forming a second ratio, thereby tuning the ratio of active material and carrier material; combining the portion of the active material in a vapor phase and the portion of the carrier material in a vapor phase, forming a conglomerate in a vapor phase; and changing the phase of the conglomerate, thereby forming nano-spheres comprising a nano-carrier material decorated with a nano-active material, wherein the size of the nano-active material is dependent upon the second ratio.

2011014, Jun 16, 2011

Dec 7, 2010

12/962490

Qinghua Yin - Tempe AZ, US
Xiwang Qi - Scottsdale AZ, US
Maximilian A. Biberger - Scottsdale AZ, US

SDCmaterials, Inc. - Tempe AZ

B01J 23/42
B01J 35/02
B01J 23/46
B01J 21/04
B01J 21/06
B01J 23/44
B82Y 30/00

502252, 502100, 502339, 502326, 502355, 977775

Embodiments of present inventions are directed to an advanced catalyst. The advanced catalyst includes a honeycomb structure with an at least one nano-particle on the honeycomb structure. The advanced catalyst used in diesel engines is a two-way catalyst. The advanced catalyst used in gas engines is a three-way catalyst. In both the two-way catalyst and the three-way catalyst, the at least one nano-particle includes nano-active material and nano-support. The nano-support is typically alumina. In the two-way catalyst, the nano-active material is platinum. In the three-way catalyst, the nano-active material is platinum, palladium, rhodium, or an alloy. The alloy is of platinum, palladium, and rhodium.