Xuefeng Liu resumes & CV records
Resumes
Xuefeng Liu
Xuefeng F Liu, 511092 Prouty Way, San Jose, CA 95129
Xuefeng Liu Phones & Addresses
1092 Prouty Way, San Jose, CA 95129
Redwood City, CA
Sunnyvale, CA
Greenbelt, MD
Mountain View, CA
Beltsville, MD
College Park, MD
Hyattsville, MD
Las Vegas, NV
Mentions for Xuefeng F Liu
Publications & IP owners
Us Patents
Process Aware Metrology
US Patent:
8468471, Jun 18, 2013
Filed:
Mar 2, 2012
Appl. No.:
13/411433
Inventors:
Xuefeng Liu - San Jose CA, US
Yung-Ho Alex Chuang - Cupertino CA, US
John Fielden - Los Altos CA, US
Jingjing Zhang - San Jose CA, US
Yung-Ho Alex Chuang - Cupertino CA, US
John Fielden - Los Altos CA, US
Jingjing Zhang - San Jose CA, US
Assignee:
KLA-Tencor Corp. - Milpitas CA
International Classification:
G06F 19/00
G06F 17/50
G06F 17/50
US Classification:
716 54, 716 52, 716 53, 716 55, 716136, 700110, 700120, 700121
Abstract:
Systems and methods for process aware metrology are provided.
Intensity Modulated Electron Beam And Application To Electron Beam Blanker
US Patent:
2009002, Jan 29, 2009
Filed:
Jul 26, 2007
Appl. No.:
11/829034
Inventors:
Vincenzo Lordi - Livermore CA, US
Kirkwood Rough - San Jose CA, US
Xuefeng Liu - San Jose CA, US
Shem-Tov Levi - Beit hanan, IL
Kirkwood Rough - San Jose CA, US
Xuefeng Liu - San Jose CA, US
Shem-Tov Levi - Beit hanan, IL
International Classification:
H01J 37/302
H01J 29/51
H01J 37/30
H01J 29/51
H01J 37/30
US Classification:
313414, 25049223
Abstract:
Method and apparatus for achieving an intensity modulated electron blanker are disclosed. An apparatus includes a cathode exposed to an activation source to generate an electron beam. Cathode control circuitry adjusts a cathode control amplifier to regulate cathode voltage and the potential of the electron beam. In some approaches the electron beam potential is used to control the blanking frequency, switching speeds, and duty cycle. In another approach electron generating beams directed on to the cathode are modulated to control the electron beam.
Illuminating A Specimen For Metrology Or Inspection
US Patent:
2011022, Sep 22, 2011
Filed:
Mar 28, 2011
Appl. No.:
13/073986
Inventors:
Yung-Ho (Alex) Chuang - Cupertino CA, US
Vladimir Levinski - Nazareth-Ilit, IL
Xuefeng Liu - San Jose CA, US
John Fielden - Los Altos CA, US
Vladimir Levinski - Nazareth-Ilit, IL
Xuefeng Liu - San Jose CA, US
John Fielden - Los Altos CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G01J 3/00
US Classification:
356300
Abstract:
Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided.
Illumination Subsystems Of A Metrology System, Metrology Systems, And Methods For Illuminating A Specimen For Metrology Measurements
US Patent:
2011027, Nov 17, 2011
Filed:
Sep 29, 2009
Appl. No.:
13/061936
Inventors:
Yung-Ho (Alex) Chuang - Cupertino CA, US
Vladimir Levinski - Nazareth-Ilit, IL
Xuefeng Liu - San Jose CA, US
Vladimir Levinski - Nazareth-Ilit, IL
Xuefeng Liu - San Jose CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G02F 1/03
G01B 11/00
G01B 11/00
US Classification:
356445, 359264
Abstract:
Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided.
Method Of Optimizing An Optical Parametric Model For Structural Analysis Using Optical Critical Dimension (Ocd) Metrology
US Patent:
2012032, Dec 20, 2012
Filed:
Jun 20, 2011
Appl. No.:
13/164398
Inventors:
Thaddeus G. Dziura - San Jose CA, US
Yung-Ho Chuang - Cupertino CA, US
Xuefeng Liu - San Jose CA, US
John J. Hench - San Jose CA, US
Yung-Ho Chuang - Cupertino CA, US
Xuefeng Liu - San Jose CA, US
John J. Hench - San Jose CA, US
International Classification:
G06F 19/00
G06F 17/50
G06F 17/50
US Classification:
700121, 703 2
Abstract:
Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.
Electron-Bombarded Charge-Coupled Device And Inspection Systems Using Ebccd Detectors
US Patent:
2013014, Jun 13, 2013
Filed:
Dec 10, 2012
Appl. No.:
13/710315
Inventors:
Xuefeng Liu - San Jose CA, US
John Fielden - Los Altos CA, US
David L. Brown - Los Gatos CA, US
John Fielden - Los Altos CA, US
David L. Brown - Los Gatos CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G01N 21/88
G01N 21/95
H01L 27/148
G01N 21/95
H01L 27/148
US Classification:
3562371, 2502081
Abstract:
A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.
Immortalization Of Epithelial Cells And Methods Of Use
US Patent:
2013030, Nov 21, 2013
Filed:
Nov 11, 2011
Appl. No.:
13/885078
Inventors:
Richard Schlegel - Rockville MD, US
Xuefeng Liu - Gaithersburg MD, US
Xuefeng Liu - Gaithersburg MD, US
Assignee:
Georgetown University - Washington DC
International Classification:
C12N 5/071
US Classification:
435 612, 435184, 435375
Abstract:
The present invention is directed towards methods of culturing non-keratinocyte epithelial cells, with the methods comprising culturing non-keratinocyte epithelial cells in the presence of feeder cells and a calcium-containing medium while inhibiting the activity of Rho kinase (ROCK) in the feeder cell, the non-keratinocyte epithelial cells or both during culturing.
Overlay Metrology System And Method
US Patent:
2019028, Sep 19, 2019
Filed:
Apr 12, 2018
Appl. No.:
15/952081
Inventors:
- Milpitas CA, US
Yinying Xiao-Li - San Jose CA, US
John Fielden - Los Altos CA, US
Xuefeng Liu - San Jose CA, US
Peilin Jiang - Santa Clara CA, US
Yinying Xiao-Li - San Jose CA, US
John Fielden - Los Altos CA, US
Xuefeng Liu - San Jose CA, US
Peilin Jiang - Santa Clara CA, US
International Classification:
G01B 11/27
Abstract:
A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.
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