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Xuemei Xuemei Zhang, 56Alhambra, CA

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Alhambra, CA   

Monterey Park, CA   

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Us Patents

Ambient Infrared Detection In Solid State Sensors

US Patent:
7737394, Jun 15, 2010
Filed:
Aug 31, 2006
Appl. No.:
11/513582
Inventors:
Ilia Ovsiannikov - Studio City CA, US
Xuemei Zhang - Mountain View CA, US
Dmitri Jerdev - South Pasadena CA, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G03B 13/02
US Classification:
250226, 250214 AL, 250214 B, 250332, 257440, 348272, 356402, 356419
Abstract:
A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

Ambient Infrared Detection In Solid State Sensors

US Patent:
8569681, Oct 29, 2013
Filed:
Jun 11, 2010
Appl. No.:
12/813705
Inventors:
Ilia Ovsiannikov - Studio City CA, US
Xuemei Zhang - Mountain View CA, US
Dmitri Jerdev - South Pasadena CA, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G03B 13/02
US Classification:
250226, 250332
Abstract:
A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

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