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Song Sheng Xue, 597024 Elmsdale Dr, San Jose, CA 95120

Known as:
Song S Xue Sona S Xue Sheng Xue Song Songsheng S Xue Sheng Xue Songsheng Sorg S Zue Xue Songsheng
Related to:
Catherine Xue 24

Song Xue Phones & Addresses

7024 Elmsdale Dr, San Jose, CA 95120    408-8264555   

945 Summerleaf Pl, San Jose, CA 95120   

939 Marble Ct, San Jose, CA 95120    408-2687330   

5712 Continental Dr, Minneapolis, MN 55436    952-9385523   

Edina, MN   

Union City, CA   

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Song Xue resumes & CV records

Resumes

Song Xue Photo 33

Senior Process Engineer

Location:
San Francisco, CA
Industry:
Computer Hardware
Work:
Western Digital
Senior Process Engineer Western Digital Oct 2016 - Jul 2018
Process Technician O'rite International Corp Jul 2005 - Sep 2010
Sales Manager Shanghai Volkswagen Sep 2001 - Jun 2004
Sales
Education:
University of California, Los Angeles 2010 - 2013
Bachelors, Bachelor of Science, Materials Science
Skills:
Microsoft Office, Microsoft Excel, Microsoft Word, Powerpoint, Research, Teamwork, Social Media, Matlab, Customer Service, Photoshop, Public Speaking, C++, English, Windows, Event Planning, Time Management, Ceramic Materials, Polymer Composites, Semiconductor Fabrication
Interests:
Latest Engineering Technology
Football
Basketball
Reading
Certifications:
Comptia
Comptia A+ Ce
Song Xue Photo 34

Senior Manager Of Sensor Technology

Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Omnivision Technologies, Inc.
Senior Manager of Sensor Technology Rambus Jan 2012 - Dec 2013
Cis Principal Architect Pro Image Sports 2008 - 2009
Director of Engineering Proimage/Mvc 2008 - 2009
Director of Engineering Mvc 2008 - 2009
Director Eastman Kodak Sep 2004 - Mar 2008
Analog Design Lead and Senior Analog Ic Design Engineer National Semiconductor Sep 2003 - Sep 2004
Principal Circuit Design Engineer Rockwell Science Center 2000 - 2003
Senior Scientist Rockwell Scientific 2000 - 2003
Senior Scientist Photobit 1996 - 2000
Senior Analog Design Engineer
Education:
University of California, Los Angeles 1989 - 1995
Doctorates, Doctor of Philosophy, Electrical Engineering, Applied Physics
Skills:
Adcs, Semiconductors, Image Sensors, Mixed Signal, Sensors, Embedded Systems, Cmos, Microprocessors, Analog, Low Power Design, Soc, Integrated Circuit Design, Analog Circuit Design, R&D, Circuit Design, Ic
Song Xue Photo 35

Song Xue

Song Xue Photo 36

Song Xue

Song Xue Photo 37

Song Xue

Publications & IP owners

Wikipedia

Song Xue Photo 38

Xue Sg

From Wikipedia, the free encyclopedia. Jump to: navigation, search. Xue Song () (died 773), formally the Prince of Pingyang (), was a general of the ...

Us Patents

Laminated Hard Magnet In Mr Sensor

US Patent:
6351357, Feb 26, 2002
Filed:
Sep 20, 2000
Appl. No.:
09/665782
Inventors:
Song Sheng Xue - Edina MN
James F. Dolejsi - Chanhassen MN
Patrick J. Ryan - St. Paul MN
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 539
US Classification:
36032731
Abstract:
A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.

Overlaid Mr Structure With Magnetostatic Stabilized Soft Adjacent Layer

US Patent:
6449135, Sep 10, 2002
Filed:
Nov 6, 1998
Appl. No.:
09/180560
Inventors:
Juren Ding - Lakeville MN
Song Sheng Xue - Edina MN
James Dolejsi - Chanhassen MN
Patrick Joseph Ryan - St. Paul MN
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 539
US Classification:
36032731, 36032723
Abstract:
The present invention is a magnetoresistive (MR) sensor ( ) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) ( ) and the overlaid structure is used with the MR element ( ). The method of making the MR sensor ( ) comprises depositing SAL ( ) on top of the gap layer ( ) and depositing spacer material ( ) on top of the SAL ( ). A mask ( ) is placed over the central region of the spacer material ( ) and SAL ( ). The spacer material ( ) and SAL ( ) are removed in the areas not covered by the mask ( ). An underlayer material ( ) is deposited in the areas where the SAL ( ) and spacer material ( ) were removed. A hard-biasing material ( ) is deposited on top of the underlayer ( ). The mask ( ) is removed and the MR element ( ) is deposited on top of the spacer material ( ) in the active region of the sensor ( ) and on top of the hard-biasing material ( ) in the passive regions of the sensor ( ).

Giant Magnetoresistive Sensor With A Crmnpt Pinning Layer And A Nifecr Seed Layer

US Patent:
6498707, Dec 24, 2002
Filed:
Aug 25, 1999
Appl. No.:
09/367952
Inventors:
Zheng Gao - Bloomington MN
Song S. Xue - Eden Prairie MN
Sining Mao - Savage MN
Assignee:
Seagate Technology, LLC - Scotts Valley CA
International Classification:
G11B 539
US Classification:
36032411, 36032412
Abstract:
A giant magnetoresistive stack ( ) for use in a magnetic read head includes a NiFeCr seed layer ( ), a ferromagnetic free layer ( ), a nonmagnetic spacer layer ( ), a ferromagnetic pinned layer ( ), and a CrMnPt pinning layer ( ). The ferromagnetic free layer ( ) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer ( ). The ferromagnetic pinned layer ( ) has a fixed magnetic moment and is positioned adjacent to the CrMnPt pinning layer ( ). The nonmagnetic spacer layer ( ) is positioned between the free layer ( ) and the pinned layer ( ). The combination of layers with their respective atomic percentage compositions and thicknesses results in a GMR ratio of at least 12%.

Magnetic Head

US Patent:
6507457, Jan 14, 2003
Filed:
Aug 7, 2001
Appl. No.:
09/923981
Inventors:
Qing He - Bloomington MN, 55435
Song S. Xue - Scotts Valley CA, 95067-0360
Bryan K. Oliver - Scotts Valley CA, 95067-0360
Patrick J. Ryan - Scotts Valley CA, 95067-0360
International Classification:
G11B 5147
US Classification:
360126
Abstract:
A magnetic head comprising a substrate, a non-magnetic seed layer deposited on the substrate, a bottom magnetic core piece positioned over and contacting the non-magnetic seed layer, a magnetic seed layer, and a top magnetic core piece positioned over and contacting the magnetic seed layer.

Giant Magnetoresistive Sensor With A Multilayer Cap Layer

US Patent:
6621667, Sep 16, 2003
Filed:
Jul 18, 2001
Appl. No.:
09/908244
Inventors:
Qing He - Bloomington MN
Song S. Xue - Eden Prairie MN
Xuefei Tang - Eden Prairie MN
Bryan K. Oliver - Ames IA
Patrick J. Ryan - St. Paul MN
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 539
US Classification:
36032412, 3603241
Abstract:
A giant magnetoresistive spin valve for use in a magnetic read head includes a ferromagnetic free layer and a multilayer cap layer. The free layer has a rotatable magnetic moment. The multilayer cap layer is positioned adjacent to the free layer for increasing electron specular scattering of the free layer.

Side Flux Guide For Current Perpendicular To Plane Magnetoresistive Transducer

US Patent:
6801410, Oct 5, 2004
Filed:
Sep 19, 2002
Appl. No.:
10/247124
Inventors:
Song Sheng Xue - Eden Prairie MN
Paul E. Anderson - Eden Prairie MN
Patrick Joseph Ryan - St. Paul MN
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 539
US Classification:
360321, 3603242
Abstract:
A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

Method And Apparatus For Preventing Esd And Eos Damage In Manufacturing Magnetoresistive Effect Read Heads

US Patent:
6914758, Jul 5, 2005
Filed:
Jun 30, 2003
Appl. No.:
10/610165
Inventors:
Patrick Joseph Ryan - St. Paul MN, US
Song Sheng Xue - Edina MN, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B005/33
US Classification:
360323
Abstract:
A magnetoresistive head apparatus includes first and second readers. The first reader is a magnetoresistive reader. The second reader provides electrostatic discharge protection for the first magnetoresistive reader. The second reader can be a second magnetoresistive reader having substantially the same film structure as the first reader. The second reader can also include a phase change thin film, which has high and low resistance states that are changeable using a laser.

Transducing Head With Reduced Side Writing

US Patent:
7102854, Sep 5, 2006
Filed:
Oct 3, 2003
Appl. No.:
10/678439
Inventors:
Feng Wang - Lakeville MN, US
Shaoping Li - Naperville IL, US
Kaizhong Gao - Bloomington MN, US
Song S. Xue - Edina MN, US
Nurul Amin - Woodbury MN, US
Rick P. Michel - Minneapolis MN, US
Ibro M. Tabakovic - Edina MN, US
Yuming Zhou - Lakeville MN, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 5/147
US Classification:
360126
Abstract:
A transducing head has a main pole and at least one magnetic element (such as a return pole or a shield) which provides a potential return path for a magnetic field produced by the main pole. The magnetic element is spaced from the main pole. The magnetic element is formed at least in part of a magnetic material having a material property that reduces side writing at the magnetic element.

Possible Relatives

David T Xue  Fang C Xue  Fei Y Xue  Haihui Xue  Jian Z Xue  Jun Xue  Kevin Xue  Song M Johnston  Song D Jun  Song I Kirkham 

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