Yan H FangAlameda, CA

8171877, May 8, 2012

Jun 30, 2008

12/164285

Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Yan Fang - Fremont CA, US
Duane Outka - Fremont CA, US
Hong Shih - Walnut CA, US
Stephen Whitten - Danville CA, US

Lam Research Corporation - Fremont CA

B05C 13/00
B05C 13/02
B05C 21/00
C23C 16/00
C23C 16/50
C23F 1/00
H01L 21/306

118503, 118723 E, 118723 R, 118715, 118500, 1563451, 15634534

A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

8221552, Jul 17, 2012

Mar 30, 2007

11/730296

Duane Outka - Fremont CA, US
Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Stephen Whitten - Danville CA, US
Hong Shih - Walnut CA, US
Yan Fang - Fremont CA, US

Lam Research Corporation - Fremont CA

B08B 17/02
B08B 3/04
B08B 5/02
B08B 1/04

134 3, 134 6, 134 21, 134 26, 134 28, 134 30

Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

8276604, Oct 2, 2012

Jun 30, 2008

12/164288

Jason Augustino - Fremont CA, US
Armen Avoyan - Glendale CA, US
Yan Fang - Fremont CA, US
Duane Outka - Fremont CA, US
Hong Shih - Walnut CA, US
Stephen Whitten - Danville CA, US

Lam Research Corporation - Fremont CA

H05H 1/34
H01J 37/02
H01J 37/32
H01L 21/00
C23C 16/00

134137, 134 59, 134 85, 134166 R, 1563451, 15634514, 15634523, 15634551, 15634547, 118723 E

In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

2013010, Apr 25, 2013

Sep 24, 2012

13/625489

Lam Research Corporation - Fremont CA, US
Hong Shih - Walnut CA, US
Robert G. O'Neill - Fremont CA, US
Tae Won Kim - Dublin CA, US
Raphael Casaes - Santa Clara CA, US
Yan Fang - Fremont CA, US

Lam Research Corporation - Fremont CA

B05B 1/00
B32B 3/02
H01L 21/3065
B32B 3/30
B05D 3/12
C23C 16/44

438710, 427331, 4272481, 427289, 428155, 428 666, 239589, 257E21218

A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.

6752916, Jun 22, 2004

Feb 1, 2002

10/061519

Yan Fang - Fremont CA
Jayanthi Pallinti - Santa Clara CA
Ronald J. Nagahara - San Jose CA

LSI Logic Corporation - Milpitas CA

C25D 2112

205 82, 205 83, 205 84, 205640, 205641, 205644, 205645

A method for determining an end point of a planarization process for removing metal from a surface of a substrate submerged in an electrolytic solution or slurry. A first electrode is provided which is operable to contact the surface of the substrate, such as a working electrode of a potentiostat system. A second electrode is provided which is operable to contact the electrolytic solution, such as a reference electrode of the potentiostat system. The first electrode is contacted to the surface of the substrate and an electrochemical property is measured, such as the electrochemical potential between the first and second electrodes, where the electrochemical property is indicative of an electrochemical characteristic of the substrate-slurry system. The planarization process is preferably stopped when a substantial change in the electrochemical potential of the system is measured. By measuring the electrochemical potential between the substrate and slurry using the first and second electrodes during the planarization process, the present invention provides an accurate indication of the time at which the metal is completely removed from the surface of the substrate.

2017004, Feb 9, 2017

Aug 9, 2016

15/232214

- Fremont CA, US
John Michael Kerns - Livermore CA, US
Yan Fang - Fremont CA, US
Allan Ronne - Santa Clara CA, US

Lam Research Corporation - Fremont CA

H01J 37/32
B23K 31/02
C23C 22/50
C23C 30/00
C25F 3/24

In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.