Yanfeng F Zhang, 54San Jose, CA

8477551, Jul 2, 2013

Nov 3, 2011

13/288152

Samuel S. Mao - Castro Valley CA, US
Yanfeng Zhang - Mountain View CA, US

U.S. Department of Energy - Washington DC

G11C 13/04

365215, 365114, 365234

Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

8003497, Aug 23, 2011

Jun 29, 2006

11/480280

Peidong Yang - El Cerrito CA, US
Heonjin Choi - Seoul, KR
Sangkwon Lee - Daejeon, KR
Rongrui He - Albany CA, US
Yanfeng Zhang - El Cerrito CA, US
Tevye Kuykendal - Berkeley CA, US
Peter Pauzauskie - Berkeley CA, US

The Regents of the University of California - Oakland CA

H01L 21/20

438478, 438 3, 438931, 977762, 257E43001

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires GaMnN (x=0. 07) were synthesized. The nanowires, which have diameters of 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.