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Ye E Zhang, 4610552 S Crest Haven Ct, South Jordan, UT 84095

Known as:
Ye Vhang Zhang Ye
Related to:
Aihua Zhang 51 Ying Wang

Ye Zhang Phones & Addresses

South Jordan, UT   

Salt Lake City, UT   

Springfield, MO   

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Ye Zhang resumes & CV records

Resumes

Ye Zhang Photo 43

Yield Enhancement Engineer

Location:
Salt Lake City, UT
Industry:
Semiconductors
Work:
Micron Technology
Yield Enhancement Engineer Im Flash Technologies
Yield Enhancement Engineer at Im Flash University of Utah May 2010 - May 2014
Postdoctoral Research Fellow University of Utah Aug 2003 - May 2010
Research Assistant Missouri State University Aug 2001 - Jun 2003
Graduate Assistant Advanced Semiconductor Manufacturing Corporation Limited Sep 2000 - Jun 2001
Internship
Education:
University of Utah May 2010
University of Utah 2003 - 2010
Doctorates, Doctor of Philosophy, Materials Science, Engineering Missouri State University Jun 2003
Missouri State University 2001 - 2003
Master of Science, Masters, Materials Science Fudan University 1997 - 2001
Bachelors, Bachelor of Science, Materials Science
Skills:
Afm, Characterization, Cvd, Design of Experiments, Dual Beam, Eds, Eels, Edx, Dry Etch, Failure Analysis, Fib, Flash Memory, Fortran, Graphene, Ion Milling, Jmp, Monte Carlo, Nand Flash, Nanotechnology, Plasma Etching, Profilometer, Scanning Electron Microscopy, Semiconductor Process, Technology Development, Tem, Photolithography, Semiconductor Fabrication, Semiconductor Device, Solar Cells, Sputtering, Statistical Data Analysis, Uv/Vis, Vacuum Deposition, Wafer Deprocessing, Wet Chemical Etching, X Ray Diffraction Analysis, Materials Science, Physics, R&D
Interests:
Social Services
Languages:
English
Mandarin
Ye Zhang Photo 44

Ye Zhang

Location:
Salt Lake City, UT
Industry:
Hospitality
Work:
University of Utah Campus Store Mar 2013 - Apr 2015
Retail Sales University Guest House at University of Utah Mar 2013 - Apr 2015
Conference Assistant University of Utah Mar 2013 - Apr 2015
Customer Service University Guest House at University of Utah Mar 2013 - Apr 2015
Conference Center Assistant at University of Utah Guesthouse
Education:
University of Utah 2012 - 2016
Bachelors, Bachelor of Science, Tourism, Management, Hospitality
Skills:
Event Planning, Leadership, Microsoft Office, Management, Public Relations, Marketing Communications, Research, Social Media, Microsoft Excel, Program Evaluation, Public Speaking, Powerpoint, Customer Service
Languages:
English
Certifications:
Ahle
Ye Zhang Photo 45

Credit Analyst, Concurrent Customer Relationship Manager

Location:
Salt Lake City, UT
Industry:
Financial Services
Work:
Industrial and Commercial Bank of China Guangzhou Jul 2007 - Jul 2008
Credit Analyst, Concurrent Customer Relationship Manager Snapfax Student Discount Card Sep 2003 - Jun 2007
Marketing Researcher
Education:
University of Utah - David Eccles School of Business 2008 - 2009
Master of Science, Masters, Finance University of Strathclyde 2003 - 2007
Bachelors, Bachelor of Arts, Management, Management Science, Finance
Ye Zhang Photo 46

Ye Zhang

Ye Zhang Photo 47

Ye Zhang

Ye Zhang Photo 48

Ye Zhang

Location:
United States
Ye Zhang Photo 49

Ye Zhang

Location:
United States

Publications & IP owners

Us Patents

Homogeneous Multiple Band Gap Devices

US Patent:
8624222, Jan 7, 2014
Filed:
Oct 19, 2012
Appl. No.:
13/656565
Inventors:
Ye Zhang - Salt Lake City UT, US
Rujie Sun - Salt Lake City UT, US
Assignee:
University of Utah Research Foundation - Salt Lake City UT
International Classification:
H01L 27/142
US Classification:
257 21, 257E31003, 257E51038, 136249, 977794, 977954
Abstract:
An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

Possible Relatives

David Zhang  Dawei Zhang  Dazhi Zhang  De K Zhang  Da Q Zhang  Dachuan Zhang  Daijun Zhang  Ye Jun  Ye W Lee  Ye S Lim 

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