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Yi Zheng, 36Redwood City, CA

Known as:
Patricia Mcmanamee Patricia Kim
Related to:
June Y Kim 80 Paul Y Kim 54 Kang S Seo 48 John R Mcmanamee 82 Wook Kim Chull 81 Caroline Y Kim 57 Kim C Chong Christine M Mcmanamee 50

Yi Zheng Phones & Addresses

Redwood City, CA   

San Jose, CA   

641 Woodhams Rd, Santa Clara, CA 95051    469-9399029   

Dallas, TX   

Richardson, TX   

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Mentions for Yi Zheng

Career records & work history

Lawyers & Attorneys

Yi Zheng Photo 1

Yi Zheng, San Francisco CA - Lawyer

Address:
330 Berry St Unit 100, San Francisco, CA 94158
Licenses:
Missouri - Good Standing, Active 2006

Medicine Doctors

Yi Zheng

Specialties:
Gastroenterology
Work:
Kaiser Permanente Medical GroupKaiser Permanente Gastroenterology
1 Quality Dr BLDG B, Vacaville, CA 95688
707-6242690 (phone) 707-6243441 (fax)
Site
Education:
Medical School
Tongji Med Univ, Wuhan City, Hubei, China
Graduated: 1995
Procedures:
Colonoscopy, Upper Gastrointestinal Endoscopy, Sigmoidoscopy
Conditions:
Anxiety Phobic Disorders, Celiac Disease, Cirrhosis, Constipation, Gastroesophageal Reflux Disease (GERD), Infectious Liver Disease, Inflammatory Bowel Disease (IBD)
Languages:
English
Description:
Dr. Zheng graduated from the Tongji Med Univ, Wuhan City, Hubei, China in 1995. She works in Vacaville, CA and specializes in Gastroenterology. Dr. Zheng is affiliated with Kaiser Permanente Medical Center Vacaville.
Yi Zheng Photo 2

Yi Zheng

License Records

Yi L. Zheng

Licenses:
License #: PST.017632 - Active
Issued Date: Feb 21, 2005
Expiration Date: Dec 31, 2017
Type: Pharmacist

Yi Zheng

Address:
2957 Nieman Blvd #57-304, San Jose, CA 95148
Licenses:
License #: A5250816
Category: Airmen

Yi Zheng resumes & CV records

Resumes

Yi Zheng Photo 36

System Automation Engineer

Location:
Santa Clara, CA
Industry:
Electrical/Electronic Manufacturing
Work:
Facebook
System Automation Engineer Amazon Lab126
Software Development Engineer In Test Amazon Lab126 Feb 2017 - Jul 2018
Software Qa Engineer Zte Usa Nov 2013 - Dec 2015
Software Testing Manager Zte Usa Dec 2012 - Dec 2015
Sofeware Qa Engineer
Education:
Stanford University 2016 - 2016
The University of Texas at Dallas 2010 - 2012
Masters, Electrical Engineering Harbin Engineering University 2006 - 2010
Bachelors, Bachelor of Science, Information Science, Engineering, Electronics Engineering
Skills:
Embedded Systems, C++, Android, Qxdm, Adb, Qpst, Java, Python, Eclipse, Quality Assurance, Javascript, Angularjs, Testing, Project Management
Languages:
English
Mandarin
Certifications:
License 9Muhg72W5Ut5
Try Python
Html, Css and Javascript
Coursera Course Certificates, License 9Muhg72W5Ut5
Yi Zheng Photo 37

Design Verification Engineer

Location:
Los Angeles, CA
Industry:
Consumer Electronics
Work:
Apple
Design Verification Engineer Oracle Jul 1, 2016 - Oct 31, 2017
Hardware Engineer Information Sciences Institute May 2015 - Dec 2015
Graduate Student Researcher
Education:
University of Southern California 2014 - 2016
Masters, Electronics Engineering Xidian University 2010 - 2014
Bachelors, Telecommunications, Engineering University of Southern California 1968 - 1969
Masters University of Southern California
Skills:
Verilog, C, C++, Python, Matlab, Perl, Linux, Modelsim, Cadence Virtuoso, Java, Microcontrollers, Netfpga, Xilinx Ise, Shell Scripting, Algorithms, Testing, Msp430, Raspberry Pi, Stm32, Deterlab, Altera Quartus, Pid, Pcb Design, Uart, I2C, Spi, Soldering, Ni Multisim, Css, Iar Embedded Workbench, Keil, Opencv, Dc Dc, Quadcopters, Android Development, Altium Designer, Surface Electromyograpy
Interests:
Bilim Ve Teknoloji
Languages:
English
Mandarin
Yi Zheng Photo 38

Technical Leader, Cisco Iot Engineering Group

Location:
San Francisco, CA
Industry:
Computer Networking
Work:
Cisco
Technical Leader, Cisco Iot Engineering Group Cisco Sep 2013 - Jan 2017
Solution Architect, Corporate Strategic Innovation Group Cisco Jul 2008 - Aug 2013
Technology Strategist, Corporate Development Technology Group Cisco Jun 2000 - Jun 2008
Senior Software Engineer, Multiple Groups
Skills:
Routing, Embedded Systems, Tcp/Ip, Network Architecture, Cisco Technologies, Voip, Unified Communications, Sip, Linux, Internet Protocol Suite, Wireless Networking, Security, Session Initiation Protocol, Voice Over Ip, Cisco Systems Products, Network Security, Intrusion Detection, Internet of Things, Cyber Security, Snort, Firewalls, Security Incident Response, Network Deployment, Network Infrastructure Architecture, Cisco Certified Internetwork Expert, Software Development, Software As A Service
Languages:
English
Mandarin
Certifications:
Ccie Routing & Switching
Yi Zheng Photo 39

Yi Zheng

Skills:
Medicare, Asset Management, Pharmacy
Yi Zheng Photo 40

Yi Zheng

Yi Zheng Photo 41

Yi Zheng

Yi Zheng Photo 42

Director Of Asian Marketing

Work:

Director of Asian Marketing
Yi Zheng Photo 43

Owner, Xyz Motors

Location:
San Francisco Bay Area
Industry:
Automotive

Publications & IP owners

Us Patents

Use Of Cyclic Siloxanes For Hardness Improvement Of Low K Dielectric Films

US Patent:
6815373, Nov 9, 2004
Filed:
Apr 16, 2002
Appl. No.:
10/124655
Inventors:
Vinita Singh - Mountain View CA
Srinivas D. Nemani - San Jose CA
Yi Zheng - San Jose CA
Lihua Li - San Jose CA
Li-Qun Xia - Santa Clara CA
Ellie Yieh - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2131
US Classification:
438787, 438788, 438789, 438790
Abstract:
A method for depositing a low dielectric constant film having a dielectric constant of about 3. 5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

Method Of Depositing Dielectric Materials In Damascene Applications

US Patent:
6890850, May 10, 2005
Filed:
Jul 15, 2002
Appl. No.:
10/196498
Inventors:
Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/4763
H01L021/31
H01L021/469
US Classification:
438631, 438634, 438638, 438789
Abstract:
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Method For Cleaning A Process Chamber

US Patent:
6902629, Jun 7, 2005
Filed:
Apr 12, 2002
Appl. No.:
10/122481
Inventors:
Yi Zheng - San Jose CA, US
Vinita Singh - Mountain View CA, US
Srinivas D. Nemani - San Jose CA, US
Chen-An Chen - Milpitas CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B005/00
US Classification:
134 31, 134 11, 134 221, 134 2218, 134 26, 134 30, 134902, 216 63, 216 67, 216 68, 438905
Abstract:
Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

Modulated/Composited Cvd Low-K Films With Improved Mechanical And Electrical Properties For Nanoelectronic Devices

US Patent:
7011890, Mar 14, 2006
Filed:
Mar 3, 2003
Appl. No.:
10/378783
Inventors:
Son Van Nguyen - Los Gatos CA, US
Yi Zheng - San Jose CA, US
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
B32B 25/20
B05D 3/06
US Classification:
428447, 426131, 427101, 427387, 427470, 427489, 427494, 427495, 427508, 427515, 427595
Abstract:
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Ultra Low Dielectric Materials Based On Hybrid System Of Linear Silicon Precursor And Organic Porogen By Plasma-Enhanced Chemical Vapor Deposition (Pecvd)

US Patent:
7056560, Jun 6, 2006
Filed:
Feb 4, 2004
Appl. No.:
10/773060
Inventors:
Kang Sub Yim - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric P. Hollar - Cupertino CA, US
Assignee:
Applies Materials Inc. - Santa Clara CA
International Classification:
C23C 16/56
C23C 16/48
C23C 16/42
C23C 16/40
H01L 21/473
US Classification:
427551, 42725537, 42724915, 438789, 438786
Abstract:
A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

Method For Forming Ultra Low K Films Using Electron Beam

US Patent:
7060330, Jun 13, 2006
Filed:
Nov 22, 2002
Appl. No.:
10/302393
Inventors:
Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric Hollar - Cupertino CA, US
Kang Sub Yim - Mountain View CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/56
US Classification:
427551, 427596, 4272556, 4272491
Abstract:
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2. 5 and a hardness greater than 0. 5 GPa.

Process Of Manufacturing Coil Layers Using A Novel Combination Of Photoexposure And Thermal Curing To Achieve Shape Control Of A Photoresist Material

US Patent:
7089651, Aug 15, 2006
Filed:
Oct 5, 2001
Appl. No.:
09/971277
Inventors:
Yi Zheng - San Ramon CA, US
Yi-Chun Liu - Fremont CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5/17
G03F 7/00
US Classification:
2960324, 2960323, 2960325, 2960308, 29606, 430320, 430313, 360122, 360123
Abstract:
A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.

Method Of Depositing Dielectric Materials Including Oxygen-Doped Silicon Carbide In Damascene Applications

US Patent:
7151053, Dec 19, 2006
Filed:
Apr 28, 2005
Appl. No.:
11/118678
Inventors:
Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/4763
H01L 21/31
H01L 21/469
US Classification:
438631, 438634, 438638, 438789
Abstract:
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Isbn (Books And Publications)

A New English-Chinese Dictionary

Author:
Yi Li Zheng
ISBN #:
0471808970

New English-Chinese Dictionary

Author:
Yi Li Zheng
ISBN #:
0828810036

Scarlet Memorial: Tales Of Cannibalism In Modern China

Author:
Yi Zheng
ISBN #:
0813326168

Old Well

Author:
Yi Zheng
ISBN #:
0835122751

Travelling Facts: The Social Construction, Distribution, And Accumulation Of Knowledge

Author:
Yi Zheng
ISBN #:
3593375079

Dongbei Nong Ye Jing Ji Shi Liao Ji Cheng

Author:
Yi Zheng
ISBN #:
7807021438

Possible Relatives

Cynthia W Zheng  David Z Zheng  Dayu T Zheng  De X Zheng  Dean Zheng  Dan L Zheng  Dejian H Zheng  Yi J Lam  Yi Meng  Yi Li 

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