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Yijie Li, 665113 S Mariposa Dr, Gilbert, AZ 85298

Yijie Li Phones & Addresses

5113 S Mariposa Dr, Gilbert, AZ 85298    518-3721738   

Casa Grande, AZ   

Chandler, AZ   

2312 Almeria Rd, Niskayuna, NY 12309    518-3721738   

Schenectady, NY   

Houston, TX   

Mentions for Yijie Li

Yijie Li resumes & CV records

Resumes

Yijie Li Photo 15

Mepfeco

Position:
Project Manager at Foreign Economic Cooperation Office, Ministry of Environmental Protection of China
Location:
Beijing City, China
Industry:
Environmental Services
Work:
Foreign Economic Cooperation Office, Ministry of Environmental Protection of China since Jun 2010
Project Manager
University of Wisconsin-Madison Nov 2007 - Jan 2010
Postdoctoral Fellow
Institute of Chemistry, Chinese Academy of Sciences Sep 2002 - Jul 2007
Graduate Research Assistant
Education:
University of Wisconsin-Madison 2007 - 2010
Postdoc, Chemistry
Institute of Chemistry, Chinese Academy of Sciences 2002 - 2007
Ph.D, Polymer Physics & Chemistry
Beihang University 1998 - 2002
B.Eng, Material Science and Engineering
Skills:
Communication Strategy, Imagination, Painting, Fortran, C, Microsoft Office, Linux, Windows, Mathematica, Gaussian, Mac, Research, Chemistry, Statistics, Science, Problem Solving, Polymers, Materials Science, English
Interests:
Reading, traveling, music.
Honor & Awards:
➢ Excellence in Research Award, Institute of Chemistry, Chinese Academy of Sciences (2005-2007) ➢ Excellent Student Award, Chinese Academy of Sciences (2005-2007) ➢ Scholarship in Beijing University of Aeronautics and Astronautics (1999-2001) ➢ Second prize in the “FengRu Cup” Science and Technology Competition held in Beijing University of Aeronautics and Astronautics (2001)
Yijie Li Photo 16

Yijie Li

Yijie Li Photo 17

Yijie Li

Yijie Li Photo 18

Mepfeco

Position:
Project Manager at Foreign Economic Cooperation Office, Ministry of Environmental Protection of China
Location:
Beijing City, China
Industry:
Environmental Services
Work:
Foreign Economic Cooperation Office, Ministry of Environmental Protection of China since Jun 2010
Project Manager
University of Wisconsin-Madison Nov 2007 - Jan 2010
Postdoctoral Fellow
Institute of Chemistry, Chinese Academy of Sciences Sep 2002 - Jul 2007
Graduate Research Assistant
Education:
University of Wisconsin-Madison 2007 - 2010
Postdoc, Chemistry
Institute of Chemistry, Chinese Academy of Sciences 2002 - 2007
Ph.D, Polymer Physics & Chemistry
Beihang University 1998 - 2002
B.Eng, Material Science and Engineering
Skills:
Communication Strategy, Imagination, Painting, Fortran, C, Microsoft Office, Linux, Windows, Mathematica, Gaussian, Mac, Research, Chemistry, Statistics, Science, Problem Solving, Polymers, Materials Science, English
Interests:
Reading, traveling, music.
Honor & Awards:
➢ Excellence in Research Award, Institute of Chemistry, Chinese Academy of Sciences (2005-2007) ➢ Excellent Student Award, Chinese Academy of Sciences (2005-2007) ➢ Scholarship in Beijing University of Aeronautics and Astronautics (1999-2001) ➢ Second prize in the “FengRu Cup” Science and Technology Competition held in Beijing University of Aeronautics and Astronautics (2001)

Publications & IP owners

Us Patents

High Throughput Continuous Pulsed Laser Deposition Process

US Patent:
7501145, Mar 10, 2009
Filed:
Oct 30, 2006
Appl. No.:
11/554428
Inventors:
Venkat Selvamanickam - Wynantskill NY, US
Yijie Li - Niskayuna NY, US
Chan Park - Kyung-Nam, KR
Assignee:
Superpower, Inc. - Schenectady NY
International Classification:
B05D 5/12
US Classification:
427 62, 427596, 20419224, 505474
Abstract:
A method includes feeding an uncoated substrate from a payout spool into a multi-chambered vacuum apparatus. The vacuum apparatus includes a plurality of deposition chambers defining an extended deposition zone, a multi-zone substrate heater located within the extended deposition zone, and multiple high-temperature superconductor (HTS) targets located within and being arranged linearly along the extended deposition zone. The multiple HTS targets include a first and second HTS target. The first and second HTS targets include a HTS material. The method farther includes translating the uncoated substrate along a translation path through the plurality of deposition chambers, impinging multiple laser beams simultaneously upon the multiple HTS targets and forming multiple overlapping plumes of HTS material within the extended deposition zone, depositing HTS material on a first major surface of the uncoated substrate to provide a coated substrate, and winding the coated substrate onto a take-up spool.

High Throughput Continuous Pulsed Laser Deposition Process And Apparatus

US Patent:
2005000, Jan 13, 2005
Filed:
Jun 23, 2003
Appl. No.:
10/602294
Inventors:
Venkat Selvamanickam - Wynantskill NY, US
Yijie Li - Niskayuna NY, US
Chan Park - Changwon, KR
International Classification:
C23C016/00
US Classification:
118718000
Abstract:
The present invention relates to an apparatus and method for forming a high-temperature superconducting film on a long tape substrate at speeds suitable for large-scale production. The method includes a spooling system for use in a high-throughput, continuous pulsed laser deposition (PLD) process in which a superconducting layer, such as yttrium-barium-copper-oxide (YBCO), is deposited atop a buffered metal substrate tape that is translated through one or more deposition chambers via the action of a reel-to-reel spooling system and a conductive-radiant multi-zone substrate heater. It also optionally includes a multi-target manipulator apparatus and multiple laser beams in which multiple targets are impinged upon simultaneously.

Rare-Earth-Ba-Cu-O Superconductors And Methods Of Making Same

US Patent:
2005000, Jan 13, 2005
Filed:
Jul 10, 2003
Appl. No.:
10/616719
Inventors:
Yijie Li - Niskayuna NY, US
Venkat Selvamanickam - Wynantskill NY, US
International Classification:
H01F001/00
US Classification:
335216000
Abstract:
Rare-earth-Ba—Cu—O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jof less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jin the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jthat is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jvalue that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.

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