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Yuko Fujimoto
Yuko FujimotoSunnyvale, CA
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Yuko Fujimoto
Yuko Fujimoto ( , Fujimoto Yko, born January 14, 1943) is a Japanese volleyball player and Olympic champion. She was a member of the Japanese ...
Us Patents
Manufacturing Method Of Thin Film Semiconductor Substrate
US Patent:
2012007, Mar 29, 2012
Filed:
Sep 2, 2011
Appl. No.:
13/225039
Inventors:
Toshiyuki SAMESHIMA - Fuchu-shi, JP
Yutaka Inouchi - Kyoto-shi, JP
Takeshi Matsumoto - Kyoto-shi, JP
Yuko Fujimoto - San Jose CA, US
Yutaka Inouchi - Kyoto-shi, JP
Takeshi Matsumoto - Kyoto-shi, JP
Yuko Fujimoto - San Jose CA, US
Assignee:
NISSIN ION EQUIPMENT CO., LTD. - Kyoto
National University Corporation Tokyo University of Agriculture and Technology - Tokyo
National University Corporation Tokyo University of Agriculture and Technology - Tokyo
International Classification:
H01L 21/304
US Classification:
438459, 257E21237
Abstract:
A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000 C. to 1200 C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
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