Yun Zhang, 42Rye, NY

6342148, Jan 29, 2002

Apr 22, 1999

09/296574

See Hong Chiu - Brooklyn NY
Yun Zhang - Warren NJ

Lucent Technologies Inc. - Murray Hill NJ

C25D 332

205302, 205254

An electrolyte bath for plating tin or tin alloy onto metal substrates using a high speed plating process is described. The electrolyte bath contains a stannous alkyl sulfonate and an alkyl sulfonic acid. The bath also contains an organic compound that is the reaction product of polyalkylene glycol and phenolphthalein or derivatives of phenolphthalein.

6590962, Jul 8, 2003

Jun 21, 2000

09/598595

David J. Groessl - Vernon Hills IL
Kurt E. Schmidt - Burlington WI
Yun Zhang - Wheeling IL

Teradyne, Inc. - Boston MA

H04M 124

379 1401, 379 101, 379 1505, 379 2203, 379 2903, 324512, 324522, 324525

A method and apparatus to non-interactively test telephone networks and more specifically to localize faults such as resistive faults in the subscriber loop of the telephone network is presented. The method and apparatus determine whether the fault is in the tip line or ring line of a phone line. The existence of a fault voltage, if any, is also determined. The resistance of the tip line to ground and the resistance of the ring line to ground is measured. A fault resistance is calculated from this information, from which the location of the fault is determined.

7670950, Mar 2, 2010

Aug 4, 2008

12/185641

Thomas B. Richardson - Killingworth CT, US
Yun Zhang - Warren NJ, US
Chen Wang - New Haven CT, US
Vincent Paneccasio, Jr. - Madison CT, US
Cai Wang - Milford CT, US
Xuan Lin - Northford CT, US
Richard Hurtubise - Clinton CT, US
Joseph A. Abys - Warren NJ, US

Enthone Inc. - West Haven CT

H01L 21/44

438675, 438 42, 438361, 438533, 257E21174, 257E21575, 257E21585

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

7713859, May 11, 2010

Aug 9, 2006

11/463355

Thomas B. Richardson - Killingworth CT, US
Marlies Kleinfeld - Wuppertal, DE
Christian Rietmann - Sonsbeck, DE
Igor Zavarine - New Haven CT, US
Ortrud Steinius - Wuppertal, DE
Yun Zhang - Warren NJ, US
Joseph A. Abys - Warren NJ, US

Enthone Inc. - West Haven CT

H01L 33/62

438613, 257772, 257779, 257E21508, 257E23026

A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Sn ions, a source of Ag ions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn—Ag alloy onto the under bump metal structure.

2013019, Aug 8, 2013

May 24, 2011

13/699910

Thomas B. Richardson - Killingworth CT, US
Wenbo Shao - Milford CT, US
Xuan Lin - Northford CT, US
Cai Wang - Woodbridge CT, US
Vincent Paneccasio, JR. - Madison CT, US
Joseph A. Abys - Guilford CT, US
Yun Zhang - Warren NJ, US
Richard Hurtubise - Clinton CT, US
Chen Wang - New Haven CT, US

ENTHONE INC. - West Haven CT

C25D 3/38

205157

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

5881130, Mar 9, 1999

Sep 15, 1997

8/929842

Yun Zhang - Wheeling IL

Teradyne, Inc. - Boston MA

H04M 124
G01R 2708
G01R 3108

379 6

Method and apparatus for detecting whether load coils are attached to a telephone line. A stimulus waveform having multiple frequency components is applied to the line. The current and voltage at the near end of the line are coherently sampled and transformed to the frequency domain. The frequency spectra are used to compute auto and cross power spectra of the current and voltage. These power spectra are then used to compute the impedance on the line as well as a coherence function that indicates the extent to which the computed impedance was influenced by noise. If the coherence values indicate that the computed impedance is sufficiently reliable, load coils are detected by finding peaks in the magnitude of the impedance function or sign changes in the phase of the impedance function. Calibration, offset adjustments and ensemble smoothing are used to increase the accuracy of the results. The computation is fast because computing the spectra avoids the need for individual measurements at multiple frequencies.

2021011, Apr 22, 2021

Oct 18, 2019

16/658017

- Armonk NY, US
Pavithra Harsha - White Plains NY, US
Ashish Jagmohan - Irvington NY, US
Ajay Ashok Deshpande - White Plains NY, US
Rakesh Mohan - Cortlandt Manor NY, US
Yun Zhang - Pittsburgh PA, US

G06Q 10/06
G06F 16/27

An example operation may include one or more of collecting, by a first node, a subset of data inputs from a plurality of second nodes over a blockchain underlying a supply-chain, executing, by the first node, a smart contract to simulate a state of the supply-chain based on the subset of the data inputs, and generating, by the first node, at least one policy decision based on the simulated state of the supply-chain.

2021011, Apr 22, 2021

Oct 18, 2019

16/658012

- Armonk NY, US
Pavithra Harsha - White Plains NY, US
Ashish Jagmohan - Irvington NY, US
Ajay Ashok Deshpande - White Plains NY, US
Rakesh Mohan - Cortlandt Manor NY, US
Yun Zhang - Pittsburgh PA, US

G06Q 10/08
G06Q 10/06
G06F 17/50
H04L 9/06

An example operation may include one or more of collecting, by a first node, a plurality of permissioned data inputs from a plurality of second nodes of a supply-chain, performing, by the first node, a granular simulation based on the permissioned data inputs to generate a plurality of key performance indicators (KPIs), and executing a smart contract to adjust order processes of the supply-chain based on the KPIs.