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Song Zhao, 37Quincy, MA

Related to:
Amy Hsi Hua Chen 73 Feng Xian Chen 56 Jimmy Chen 43 Bingxin Chen

Song Zhao Phones & Addresses

Quincy, MA   

Brooklyn, NY   

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Career records & work history

Medicine Doctors

Song Zhao

Specialties:
Hematology/Oncology
Work:
Swedish Medical GroupMinor & James Medical
515 Minor Ave STE 170, Seattle, WA 98104
206-3869501 (phone) 206-3869547 (fax)
Site
Education:
Medical School
Peking Union Med Coll, Beijing, Beijing, China
Graduated: 1996
Conditions:
Anemia, Endocarditis
Languages:
English
Description:
Dr. Zhao graduated from the Peking Union Med Coll, Beijing, Beijing, China in 1996. He works in Seattle, WA and specializes in Hematology/Oncology. Dr. Zhao is affiliated with Harborview Medical Center and Swedish Medical Center - First Hill.

Song Q. Zhao

Specialties:
Anatomic Pathology & Clinical Pathology
Work:
Associated Pathologists
700 S Park St, Madison, WI 53715
608-2586914 (phone) 608-2586268 (fax)
Education:
Medical School
Henan Coll of Traditional Chinese Med, Zhengzhou City, Henan, China
Graduated: 1984
Languages:
English
Description:
Dr. Zhao graduated from the Henan Coll of Traditional Chinese Med, Zhengzhou City, Henan, China in 1984. He works in Madison, WI and specializes in Anatomic Pathology & Clinical Pathology. Dr. Zhao is affiliated with Grant Regional Health Center, Southwest Health Center, St Marys Hospital and Upland Hills Health.

Song Zhao resumes & CV records

Resumes

Song Zhao Photo 35

Song Zhao

Song Zhao Photo 36

Song Zhao

Publications & IP owners

Us Patents

Novel Method To Improve Performance By Enhancing Poly Gate Doping Concentration In An Embedded Sige Pmos Process

US Patent:
2011030, Dec 15, 2011
Filed:
Aug 28, 2009
Appl. No.:
12/549908
Inventors:
Xin WANG - New York NY, US
Zhiqiang WU - Allen TX, US
Weize XIONG - Austin TX, US
Song Zhao - Plano TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
H01L 21/336
US Classification:
438197, 257E21409
Abstract:
A method for forming an embedded SiGe (eSiGe) PMOS transistor () with improved PMOS poly gate () doping concentration without increasing mask count and causing S/D overrun issue. After gate sidewall spacer () formation, the gate electrode () and source/drain regions () are implanted. After the implant, a recess () is formed and SiGe is deposited in the recess. By implanting and removing the implanted material () from the source/drain regions prior to SiGe () deposition, high PMOS gate doping can be achieved without causing a S/D overrun issue.

Possible Relatives

Dayu C Zhao  Daisy Zhao  Danan Q Zhao  Ding J Zhao  Dong Zhao  Dongsheng Zhao  Elaine Zhao  Song M Johnston  Song D Jun  Song I Kirkham 

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