Zhiming Jiang5136 Rappolla Ct, Pleasanton, CA 94588
Zhiming Jiang Phones & Addresses
5136 Rappolla Ct, Pleasanton, CA 94588 925-2510835
4866 Bernal Ave, Pleasanton, CA 94566 925-6007237
Tracy, CA
Work
Position:
Professional/Technical
Emails
Mentions for Zhiming Jiang
Publications & IP owners
Us Patents
High Throughput Thin Film Characterization And Defect Detection
US Patent:
2013008, Apr 4, 2013
Filed:
Sep 25, 2012
Appl. No.:
13/626023
Inventors:
Leonid Poslavsky - Belmont CA, US
Zhiming Jiang - Pleasanton CA, US
Jun-Jie (Julien) Ye - Shanghai, CN
Torsten Kaack - Los Altos CA, US
Qiang Zhao - Milpitas CA, US
Zhiming Jiang - Pleasanton CA, US
Jun-Jie (Julien) Ye - Shanghai, CN
Torsten Kaack - Los Altos CA, US
Qiang Zhao - Milpitas CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G01N 21/95
US Classification:
3562375
Abstract:
Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
Spectral Matching Based Calibration
US Patent:
2013013, May 23, 2013
Filed:
Nov 19, 2012
Appl. No.:
13/680273
Inventors:
Zhiming Jiang - Pleasanton CA, US
Ward RDell Dixon - Livermore CA, US
Leonid Poslavsky - Belmont CA, US
Torsten Kaack - Los Altos CA, US
Ward RDell Dixon - Livermore CA, US
Leonid Poslavsky - Belmont CA, US
Torsten Kaack - Los Altos CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G01N 21/27
US Classification:
702104, 356402
Abstract:
Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.
Control By Sample Reflectivity
US Patent:
7903250, Mar 8, 2011
Filed:
Jun 3, 2009
Appl. No.:
12/477571
Inventors:
Fabio A. Faccini - San Jose CA, US
Torsten R. Kaack - Los Altos CA, US
Jiyou Fu - Sunnyvale CA, US
Zhiming Jiang - Pleasanton CA, US
Torsten R. Kaack - Los Altos CA, US
Jiyou Fu - Sunnyvale CA, US
Zhiming Jiang - Pleasanton CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G01N 21/55
US Classification:
356445, 356448
Abstract:
A method of performing an investigation of a substrate, by measuring a reflectivity of the substrate, comparing the reflectivity of the substrate to an anticipated reflectivity value, selectively subjecting the substrate to a laser beam for a predetermined duration and at a predetermined energy only when the reflectivity of the substrate is within a specified tolerance of the anticipated reflectivity value, selectively signaling a fault condition when the reflectivity of the substrate is not within the specified tolerance of the anticipated reflectivity value, and selectively performing the investigation of the substrate only when the reflectivity of the substrate is within the specified tolerance of the anticipated reflectivity value.
NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.