Zhong Pan, 462611 Fairhauser Rd, Naperville, IL 60564

7834379, Nov 16, 2010

Jul 15, 2008

12/173189

Zhong Pan - San Jose CA, US
David Venables - Sunnyvale CA, US
Craig Ciesla - Mountain View CA, US

JDS Uniphase Corporation - Milpitas CA

H01L 31/18

257185, 257 99, 257186, 257436, 257E31022, 257E31061, 257E31064, 438 69, 438 87, 438 91

The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source. The result is that both the dopant concentration and the diffusion depth decrease gradually from the center to the edge of the device. This tailored diffusion profile enables control of the electric field distribution such that edge breakdown is suppressed.

7893464, Feb 22, 2011

Mar 28, 2008

12/057937

Syn-Yem Hu - San Jose CA, US
Zhong Pan - San Jose CA, US

JDS Uniphase Corporation - Milpitas CA

H01L 29/73

257199, 257186, 257481

A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode.

7948006, May 24, 2011

Jun 1, 2009

12/476070

Zhong Pan - San Jose CA, US
David Venables - Sunnyvale CA, US

JDS Uniphase Corporation - Milpitas CA

H01L 23/60

257173, 257452, 257458, 257656, 257459, 257461, 257E31061, 257E29336, 257E3111

A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.

8030684, Oct 4, 2011

Jul 16, 2008

12/174079

Syn-Yem Hu - San Jose CA, US
Zhong Pan - San Jose CA, US

JDS Uniphase Corporation - Milpitas CA

H01L 31/107

257186, 257442, 257E31005, 438 72

The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.

8064486, Nov 22, 2011

Sep 7, 2007

11/852186

Zhong Pan - Davis CA, US

Infinera Corporation - Sunnyvale CA

H04J 3/06
H04B 17/00
H04B 10/08
H04B 10/00

370516, 398 25, 398156

The present invention provides a system, apparatus, and method for determining latency differences in channels within a link at a single test site. In particular, the method allows for a single transmitting device to determine distinct latency differences on both transmitter and receiver-side paths without requiring a terminating node on the other side of the connection. In other words, a switch is used, in lieu of such a terminating node, at the other side of the paths that switches at least one channel's content onto another channel and sends it back for a round trip on various transmitter-and-receiver-side-paths combinations. The present invention is based on round trip measurements and switching capability of the receiving node.

8253175, Aug 28, 2012

Jan 18, 2010

12/689112

Zhong Pan - San Jose CA, US
Craig Ciesla - Mountin View CA, US

H01L 23/28

257222, 257E21407, 438522

A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper surface of a street area of the substrate is oxidized so that the oxidized region extends under the sealing layer. The presence of the oxidized region of the upper surface of the substrate helps reduce the delamination, because the oxidized surface does not react with water to the same extent as a non-oxidized surface. The semiconductor devices remain sealed after dicing through the street area because the oxidized surface does not delaminate.

8325413, Dec 4, 2012

Mar 25, 2010

12/732118

Abhijeet D. Deore - Sunnyvale CA, US
Andrew Q. Phan - San Jose CA, US
Zhong Pan - Davis CA, US

Infinera Corporation - Sunnyvale CA

H04B 10/17
H04B 10/12

359334, 3593413

A system is provided that includes optical amplifiers provided upstream from an optical add-drop multiplexer (OADM). One of the optical amplifiers may be a Raman amplifier that supplies amplified light to another optical amplifier, such as an erbium doped fiber amplifier (EDFA), which, in turn, further amplifies and feeds the light to an input of the OADM. During turn-up, for example, the EDFA may initially be disabled, the power of the pump lasers of the Raman amplifier may be gradually increased until light input to the EDFA exceeds a power threshold at which the EDFA can amplify the input light. Light supplied to the EDFA does not have an excessive amount of power. Accordingly, at this point, the gain of the EDFA may be appropriately adjusted and then activated to supply optical signals to the OADM. Such optical signals may have a low power but not too low so as to prevent proper operation of downstream EDFA. Moreover, these optical signal do not have power that is so high as to cause “spiking.

8553725, Oct 8, 2013

Sep 30, 2011

13/249642

Iftekhar Hussain - Santa Clara CA, US
Abinder Dhillon - Allen TX, US
Zhong Pan - San Jose CA, US
Marco E. Sosa - San Jose CA, US

Infinera Corporation - Sunnyvale CA

H04J 4/00

370478, 398 43, 398 55, 398 68, 398 69

A node is configured to receive an instruction to establish a channel having a bandwidth that corresponds to an operating spectrum an optical fiber; obtain information that identifies a channel spacing and a pointer that identifies where, within the spectrum, to establish bandwidth allocations; identify a group of bandwidth segments based on the spectrum and the channel spacing; and generate bit words that correspond to the bandwidth allocations, where the bit words includes bits that, when set to a value, cause sets of segments to be reserved within the spectrum, and where the sets of segments identify where the bandwidth allocations begin and end, within the spectrum, relative to the pointer.