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Seyed Hashemi5900 Tributary Ridge Dr, Austin, TX 78759

Seyed Hashemi Phones & Addresses

5900 Tributary Ridge Dr, Austin, TX 78759    512-4189212   

30636 Mirandela Ln, Laguna Niguel, CA 92677    949-4957520   

Education

School / High School: The George Washington University Law School

Ranks

Licence: New York - Currently registered Date: 2013

Mentions for Seyed Hashemi

Career records & work history

Lawyers & Attorneys

Seyed Hashemi Photo 1

Seyed Farid Hashemi - Lawyer

Licenses:
New York - Currently registered 2013
Education:
The George Washington University Law School
Seyed Hashemi Photo 2

Seyed Hashemi - Lawyer

ISLN:
922957802
Admitted:
2013
University:
George Washington University Law School

Medicine Doctors

Seyed M. Hashemi

Specialties:
Internal Medicine, Cardiovascular Disease
Work:
Dominion Cardiac Care PC
14904 Jefferson Davis Hwy STE 202, Woodbridge, VA 22191
703-4903700 (phone) 703-4903799 (fax)
Education:
Medical School
Isfahan Univ of Med Sci & Hlth Serv, Fac of Med, Isfahan, Iran
Graduated: 1997
Procedures:
Cardioversion, Echocardiogram, Angioplasty, Cardiac Catheterization, Cardiac Stress Test, Continuous EKG, Electrocardiogram (EKG or ECG), Pacemaker and Defibrillator Procedures
Conditions:
Angina Pectoris, Congenital Anomalies of the Heart, Heart Failure, Valvular Heart Disease, Acute Bronchitis, Acute Myocardial Infarction (AMI), Aortic Regurgitation, Aortic Valvular Disease, Atrial Fibrillation and Atrial Flutter, Cardiac Arrhythmia, Cardiomyopathy, Chronic Bronchitis, Conduction Disorders, Ischemic Heart Disease, Mitral Valvular Disease, Obstructive Sleep Apnea, Paroxysmal Supreventricular Tachycardia (PSVT), Pericardidtis, Pneumonia, Pulmonary Embolism
Languages:
English, Spanish
Description:
Dr. Hashemi graduated from the Isfahan Univ of Med Sci & Hlth Serv, Fac of Med, Isfahan, Iran in 1997. He works in Woodbridge, VA and specializes in Internal Medicine and Cardiovascular Disease. Dr. Hashemi is affiliated with Inova Fairfax Medical Campus.

Seyed E. Hashemi

Specialties:
Internal Medicine, Pediatrics
Work:
Primary Care Medical
1199 Ocean Ave Bsmt, Brooklyn, NY 11230
718-8597446 (phone) 718-8593395 (fax)
Education:
Medical School
Tehran University of Medical Sciences, Tehran, Iran
Graduated: 1966
Procedures:
Electrocardiogram (EKG or ECG), Pulmonary Function Tests, Vaccine Administration
Conditions:
Abdominal Hernia, Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Conjunctivitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Alzheimer's Disease, Anemia, Angina Pectoris, Anxiety Phobic Disorders, Atrial Fibrillation and Atrial Flutter, Autism, Benign Prostatic Hypertrophy, Benign Thyroid Diseases, Breast Disorders, Bronchial Asthma, Calculus of the Urinary System, Cardiac Arrhythmia, Chronic Fatigue Syndrome, Chronic Renal Disease, Constipation, Contact Dermatitis, Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Epilepsy, Erectile Dysfunction (ED), Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Gout, Heart Failure, Hemolytic Anemia, Herpes Genitalis, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Liver Disease, Inguinal Hernia, Iron Deficiency Anemia, Ischemic Heart Disease, Male Infertility, Non-Toxic Goiter, Osteoarthritis, Osteoporosis, Otitis Media, Overweight and Obesity, Peptic Ulcer Disease, Plantar Warts, Pneumonia, Prostatitis, Psoriasis, Pulmonary Embolism, Pulmonary Tuberculosis (TB), Rheumatoid Arthritis, Scoliosis or Kyphoscoliosis, Skin and Subcutaneous Infections, Systemic Lupus Erythematosus, Urinary Incontinence
Languages:
English, Spanish
Description:
Dr. Hashemi graduated from the Tehran University of Medical Sciences, Tehran, Iran in 1966. He works in Brooklyn, NY and specializes in Internal Medicine and Pediatrics. Dr. Hashemi is affiliated with The Brooklyn Hospital Center.

Seyed M. Hashemi

Specialties:
Psychiatry
Work:
Seyed M Hashemi MD
4715 Ft Hamilton Pkwy, Brooklyn, NY 11219
718-6330555 (phone) 718-8545607 (fax)
Education:
Medical School
Tehran University of Medical Sciences, Tehran, Iran
Graduated: 1969
Procedures:
Psychiatric Diagnosis or Evaluation, Psychiatric Therapeutic Procedures
Conditions:
Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Attention Deficit Disorder (ADD), Bipolar Disorder, Dementia, Depressive Disorders, Post Traumatic Stress Disorder (PTSD), Schizophrenia
Languages:
English
Description:
Dr. Hashemi graduated from the Tehran University of Medical Sciences, Tehran, Iran in 1969. He works in Brooklyn, NY and specializes in Psychiatry. Dr. Hashemi is affiliated with Maimonides Medical Center.
Seyed Hashemi Photo 3

Seyed Mn Hashemi

Specialties:
Psychiatry
Education:
Tehran School Of Medical Sciences (1969)

Seyed Hashemi resumes & CV records

Resumes

Seyed Hashemi Photo 29

Seyed Hashemi

Work:
Execution of Darband's Residential Apartment Project Mar 2014 to Mar 2014
Intern
Shahid Rajaee Teacher Training University Sep 2013 to Jan 2014 Marketing at Company of Hoor Faade and Interior Design Mar 2013 to Jun 2013 3D Mind Workshop Nov 2012 to Nov 2012
Shahid Rajaee Teacher Training University
Design a Super Market Mar 2011 to Dec 2011
Education:
Executive Affair in Journal in Shahid Rajaee University Jul 2013
Architecture and Urabanism
Danesh High School 2006 to 2010
High School Diploma in Mathematics & Physics
Seyed Hashemi Photo 30

Seyed Hashemi

Work:
Emtedad Ltd 2014 to 2000
Technical Safety Advisor/ Process Safety Courses Trainer
Petropars Ltd 2012 to 2014
HSE in Design Lead Engineer
Petropars Ltd 2008 to 2012
Process Safety Senior Engineer
Petropars Ltd 2004 to 2008
Process Safety Engineer
OTEC Company 2004 to 2004
Piping Senior Designer
Palafarayand Company 2002 to 2004
Process and Piping Design Engineer
VCM Plant 2000 to 2002
Process Design Engineer
Education:
University of Tehran 1999 to 2002
Master's in Chemical Engineering
University of Tehran 1994 to 1999
Bachelor's in Chemical Engineering

Publications & IP owners

Us Patents

Temperature Stabilization In Flip Chip Technology

US Patent:
6359343, Mar 19, 2002
Filed:
Mar 5, 2001
Appl. No.:
09/799446
Inventors:
Abdolreza Langari - Newport Beach CA
Seyed Hassan Hashemi - Laguna Niguel CA
Assignee:
Conexant Systems, Inc. - Newport Beach CA
International Classification:
H01L 2329
US Classification:
257789, 257795, 257796, 22818022
Abstract:
Phase Change Material (âPCMâ) are used to reduce the range of temperature excursions in a semiconductor die attached to an interconnect substrate in the flip chip technology. In one embodiment a PCM underfill, which comprises PCM microspheres interspersed within a polymer, is dispensed in the interface area between the semiconductor die and the interconnect substrate. Reduction of the range of temperature excursions in the semiconductor die is achieved since the PCM underfill acts as a cushion to dampen the range of temperature excursions of the semiconductor die. During dissipation of power pulses in the semiconductor die, the PCM underfill absorbs energy from the semiconductor die by changing phase from solid to liquid without a concomitant rise in the temperature of the PCM underfill. Thus, the energy released when power pulses are being dissipated in the semiconductor die does not result in a rise in the temperature of the PCM underfill. Accordingly, the temperature of the semiconductor die which is in thermal contact with the PCM underfill is not abruptly increased during power pulses.

Method And Structure For Temperature Stabilization In Semiconductor Devices

US Patent:
6586847, Jul 1, 2003
Filed:
Sep 14, 2000
Appl. No.:
09/661490
Inventors:
Abdolreza Langari - Newport Beach CA
Seyed H. Hashemi - Laguna Niguel CA
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H01L 2329
US Classification:
257788, 313103, 313105, 313534, 4283227, 174250
Abstract:
Method and structure for temperature stabilization in semiconductor devices are disclosed. In one embodiment, a carbon-based polymer is deposited on top of an interconnect metal line in the semiconductor die where relatively large power dissipation is known to occur. Reduction of the range of temperature excursions in the semiconductor die is achieved since the polymer acts as a cushion to dampen the range of temperature excursions of the semiconductor die. During occurrence of power pulses in the semiconductor die, the polymer absorbs energy from the interconnect metal, and thus from the semiconductor devices that are connected to the interconnect metal, by expanding without a rise in the temperature of the polymer. The energy generated when power pulses are being dissipated in the semiconductor die does not result in a substantial rise in the temperature of the polymer. Accordingly, the temperature of the semiconductor devices that are connected to the interconnect metal is not abruptly increased during power pulses.

Cooling System For Pulsed Power Electronics

US Patent:
6848500, Feb 1, 2005
Filed:
Mar 11, 1999
Appl. No.:
09/266376
Inventors:
Abdolreza Langari - Newport Beach CA, US
Seyed Hassan Hashemi - Laguna Niguel CA, US
Assignee:
Skyworks Solutions, Inc. - Irvine CA
International Classification:
F28D 1500
US Classification:
16510433, 165 10, 165902, 361699, 257714
Abstract:
The invention discloses an apparatus for reducing peak temperatures and thermal excursions, of semiconductor devices, particularly in pulsed power applications. The apparatus comprises thermally coupling Phase Change Material (PCM) to the dissipating semiconductor device. PCM absorbs heat and stays at a constant temperature during its phase change from solid to liquid. The PCM melting point is chosen so that it is just below the temperature the device would otherwise achieve. When the device approaches the maximum temperature, the PCM melts, drawing heat from the device and lowering the device's peak temperature. As the device stops dissipating, after its pulse period, the PCM material solidifies releasing the heat it absorbed. The apparatus lowers the peak temperature by absorbing heat when the device is dissipating. The apparatus also keeps the semiconductor device from cooling off as much as it would cool without the apparatus, as the PCM material releases heat during the part of the cycle when it is re-solidifying, i. e.

Integrated Circuit Structure With Heat Exchanger Elements Secured Thereto And Method Of Making

US Patent:
5265321, Nov 30, 1993
Filed:
Sep 22, 1992
Appl. No.:
7/949182
Inventors:
Richard D. Nelson - Austin TX
Michael A. Olla - Austin TX
Seyed H. Hashemi - Austin TX
Thomas P. Dolbear - Austin TX
Assignee:
Microelectronics And Computer Technology Corporation - Austin TX
International Classification:
H05K 720
US Classification:
29841
Abstract:
An integrated circuit structure and method of making in which the circuit has a plurality of metal heat exchanger elements spaced from each other with their first ends secured to the structure. The first ends may be adhesively secured to an integrated circuit chip or the underlying substrate, and the heat exchanger may be hermetically attached. The method uses a compliant removable support block for attaching the plurality of individual heat exchanger elements to integrated circuit structures having variations in their elevation.

System For Data Transfer Protection During Module Connection/Disconnection Onto Live Bus

US Patent:
5574865, Nov 12, 1996
Filed:
Dec 1, 1994
Appl. No.:
8/348653
Inventors:
Seyed H. Hashemi - Mission Viejo CA
Assignee:
Unisys Corporation - Blue Bell PA
International Classification:
G06F 1108
US Classification:
395283
Abstract:
A plurality of digital modules on a Futurebus Plus common system bus means in a network are connected by the Futurebus Plus system bus for transfer of data between modules. A sending module (master) transmits address and message data on the bus to a receiving module (slave). Each module provides an interface having a Longitudinal Redundancy Checker such that the sending module transmits a first check word to the receiving module which generates a second check-word. If these check words match, then the data is accepted as good. Thus, the network can work continuously using the system bus even while new digital modules are inserted onto the system bus or detached from the system bus.

Method Of Making Three Dimensional Integrated Circuit Interconnect Module

US Patent:
5383269, Jan 24, 1995
Filed:
Sep 2, 1993
Appl. No.:
8/114865
Inventors:
Claude Rathmell - Austin TX
Carroll S. Vance - Austin TX
David W. Barnes - Austin TX
Seyed H. Hashemi - Austin TX
Assignee:
Microelectronics And Computer Technology Corporation - Austin TX
International Classification:
H05K 336
US Classification:
29830
Abstract:
A three dimensional integrated circuit interconnect for connecting a plurality of chips in a module with a standard footprint for pin grid array or quad flat pack mounting. Each IC is mounted on a custom interconnect slice and tested. The slices are stacked together with electrical connections from one slice layer to the next. The module may use multi-layer ceramic slices or printed circuit board materials.

Interface System Having Plurality Of Channels And Associated Independent Controllers For Transferring Data Between Shared Buffer And Peripheral Devices Independently

US Patent:
5471586, Nov 28, 1995
Filed:
Sep 22, 1992
Appl. No.:
7/949286
Inventors:
Khorvash Sefidvash - Laguna Niguel CA
Seyed H. Hashemi - Mission Viejo CA
Assignee:
Unisys Corporation - Blue Bell PA
International Classification:
G06F 1300
G06F 1312
G06F 1336
US Classification:
395284
Abstract:
A device interface module provides multiple concurrently operating data transfer channels between multiple groups of peripheral devices and ad multiported buffer memory which communicates via an interface bus to other external modules of a computer system.

Mass Data Storage And Retrieval System

US Patent:
5337414, Aug 9, 1994
Filed:
Sep 22, 1992
Appl. No.:
7/949280
Inventors:
Seyed H. Hashemi - Mission Viejo CA
Khorvash Sefidvash - Laguna Niguel CA
Assignee:
Unisys Corporation - Blue Bell PA
International Classification:
G06F 1316
US Classification:
395275
Abstract:
A mass storage/retrieval module for controlling the storage and retrieval operations of massive amounts of data in peripheral devices such as tape, disk, optical, etc. provides for a buffer memory system in each of the interface control modules which permit simultaneous and concurrent writing to buffer storage and reading out of buffer storage through multiple ports for high rates of data transfer operations. Redundancy and high reliability is provided in that each module of the system has dual busses and live replacement units such that, upon failure, an alternate unit can carry the circuitry requirements until the failing unit has been replaced.

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