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Alvin S Chen, 35Mountain View, CA

Alvin Chen Phones & Addresses

Mountain View, CA   

Boston, MA   

9 Ponderosa, Irvine, CA 92604    714-8573684   

Cambridge, MA   

10 Cannes, Irvine, CA 92614   

Mentions for Alvin S Chen

Alvin Chen resumes & CV records

Resumes

Alvin Chen Photo 41

Senior Project Manager

Location:
917 Sakura Dr, San Jose, CA 95112
Industry:
Renewables & Environment
Work:
Deliv
Operations Success Lead
Directnu Energy Sep 2011 - Nov 2015
Operations Manager and Project Manager and Marketing and Business Development
Pat Malley Fitness and Recreation Center Sep 2011 - Dec 2013
Spinning Instructor
Mission Strings Sep 2011 - Dec 2013
Founder, Violinist
Blach Construction Company Aug 2007 - Oct 2009
Project Engineer
Target Aug 2007 - Oct 2009
Senior Project Manager
Education:
Santa Clara University 2015 - 2015
Master of Business Administration, Masters
Santa Clara University 2006 - 2006
Bachelors, Bachelor of Science, Civil Engineering
Skills:
Program Management, Project Management, Engineering, Business Strategy, Renewable Energy, Sustainability, Business Development, Construction Management, Photovoltaics, Solar Energy, Alternative Energy, Construction, Energy Efficiency, Consulting, Ms Project, Energy
Interests:
Education
Alvin Chen Photo 42

Senior Scientist, Precision Diagnosis And Image-Guided Therapies Research Group

Location:
15 Cairns Pl, Belle Mead, NJ 08502
Industry:
Research
Work:
Massachusetts General Hospital May 2016 - Dec 2017
Visiting Scientist, Deep Learning In Neuroimaging
Vasculogic, Rutgers Civet Sep 2010 - Sep 2016
Co-Founder, Chief Technology Officer
Philips Sep 2010 - Sep 2016
Senior Scientist, Precision Diagnosis and Image-Guided Therapies Research Group
Rutgers University Sep 2012 - Aug 2016
Nih Predoctoral Research Fellow, Yarmush Lab
Rutgers University Sep 2010 - Aug 2012
Graduate Research Fellow, Yarmush Lab
Rutgers University Sep 2007 - May 2010
Undergraduate Research Assistant
Education:
Rutgers University 2010 - 2016
Doctorates, Doctor of Philosophy, Biomedical Engineering
Rutgers University 2006 - 2010
Bachelors, Bachelor of Arts, Bachelor of Science, Biomedical Engineering, Philosophy
Skills:
Biomedical Engineering, Medical Devices, R&D, Commercialization, Robotics, Computer Vision, Medical Imaging, Machine Learning, C++, Matlab, Deep Learning, Neural Networks, Labview, Solidworks, Image Analysis, Biotechnology, Opencv, Statistics, Start Ups, Entrepreneurship, Image Processing, Signal Processing, Pattern Recognition, Neuroscience, Objective C, Finite Element Analysis, Spss, Sas, Autocad, Cad, 3D Studio Max, Data Analysis, Computational Neuroscience, Python, Artificial Intelligence, Nonlinear Optimization, Computational Modeling, Statistical Modeling, Unsupervised Learning, Stochastic Processes, Image Registration, Medical Image Analysis, Mobile Applications, Iso 13485, Six Sigma, Mobile Devices, Biomaterials, Spectrophotometry, Flow Cytometry, Confocal Microscopy, Research and Development
Interests:
Biomedicine
Entrepreneurship
Basketball
Reading
Architecture and Design
Games
Engineering
Running
Stem Education
Philosophy
Machine Learning and Data Science
Languages:
English
Spanish
Alvin Chen Photo 43

Cardiology Fellow

Location:
9 Ponderosa, Irvine, CA 92604
Industry:
Hospital & Health Care
Work:
Beth Israel Deaconess Medical Center
Cardiology Fellow
Stanford Health Care Jun 2015 - Jun 2018
Resident Physician
Education:
Harvard Medical School 2011 - 2015
Doctor of Medicine, Doctorates, Medicine
Massachusetts Institute of Technology 2007 - 2011
Bachelors, Bachelor of Science, Biological Engineering
Skills:
Internal Medicine, Cardiology, Protein Chemistry, Dna, Data Analysis, Molecular Biology, Cell Culture, Pcr, Biochemistry, Gel Electrophoresis, Life Sciences, Biomedical Engineering, Rnai, Monoclonal Antibodies, Cell Biology, Cancer, Lifesciences
Interests:
Medical Genetics
Biomedical Engineering
Medicine
Biological Engineering
Science and Technology
Cardiology
General Internal Medicine
Health
Heart Failure
Cancer Biology
Rna Interference
Languages:
English
Certifications:
Medical Board of California
Md
Alvin Chen Photo 44

Alvin Chen

Skills:
Management
Alvin Chen Photo 45

Alvin Chen

Alvin Chen Photo 46

Alvin Chen

Publications & IP owners

Us Patents

Hot-Carrier Reliability Design Rule Checker

US Patent:
7219045, May 15, 2007
Filed:
Sep 27, 2001
Appl. No.:
09/969186
Inventors:
Lifeng Wu - San Jose CA, US
Jeong Y. Choi - Portland OR, US
Alvin I. Chen - San Jose CA, US
Jingkun Fang - Santa Clara CA, US
Assignee:
Cadence Design Systems, Inc. - San Jose CA
International Classification:
G06F 17/50
G06F 9/45
US Classification:
703 14, 716 4, 716 12
Abstract:
The present invention is directed to methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects by allowing design rules on degradation to be included in the netlist. Once the hot-carrier circuit simulation is launched, the rules are checked and the reliability design rule violations are reported. The process can be performed on either the layout or schematic window. The design rule criteria can be any device parameter and can be expressed in absolute or relative terms. The criteria can be based on device type, model card name, instance geometry, or temperature. Additionally, values can be set prior to beginning the simulation.

Hot Carrier Circuit Reliability Simulation

US Patent:
7292968, Nov 6, 2007
Filed:
Apr 11, 2001
Appl. No.:
09/832933
Inventors:
Lifeng Wu - Fremont CA, US
Zhihong Liu - Cupertino CA, US
Alvin I. Chen - San Jose CA, US
Jeong Y. Choi - Portland OR, US
Bruce W. McGaughy - Fremont CA, US
Assignee:
Cadence Design Systems, Inc. - San Jose CA
International Classification:
G06F 17/50
G06F 9/44
US Classification:
703 13, 717135
Abstract:
The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described. To further improve the circuit reliability simulation, a gradual or multi-step aging is used instead of the standard one step aging process.

Hot-Carrier Device Degradation Modeling And Extraction Methodologies

US Patent:
7567891, Jul 28, 2009
Filed:
Sep 27, 2001
Appl. No.:
09/969185
Inventors:
Zhihong Liu - Cupertino CA, US
Lifeng Wu - Fremont CA, US
Jeong Y. Choi - Palo Alto CA, US
Ping Chen - San Jose CA, US
Alvin I. Chen - San Jose CA, US
Gang Zhang - Campbell CA, US
Assignee:
Cadence Design Systems, Inc. - San Jose CA
International Classification:
G06F 7/60
G06F 17/50
G06F 9/45
G01R 15/00
G01R 27/28
G01R 27/26
H03K 19/20
H03K 19/094
US Classification:
703 13, 703 2, 703 14, 716 4, 716 5, 324678, 326117, 326120, 326124, 702 57, 702117
Abstract:
The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added.

Hot Carrier Circuit Reliability Simulation

US Patent:
7835890, Nov 16, 2010
Filed:
Oct 4, 2007
Appl. No.:
11/867554
Inventors:
Lifeng Wu - Fremont CA, US
Zhihong Liu - Cupertino CA, US
Alvin I. Chen - San Jose CA, US
Jeong Y. Choi - Portland OR, US
Bruce W. McGaughy - Fremont CA, US
Assignee:
Cadence Design Systems, Inc. - San Jose CA
International Classification:
G06F 17/50
G06F 9/44
US Classification:
703 2, 703 14, 703 17, 717124, 324719
Abstract:
The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described. To further improve the circuit reliability simulation, a gradual or multi-step aging is used instead of the standard one step aging process.

Hot-Carrier Device Degradation Modeling And Extraction Methodologies

US Patent:
2009029, Dec 3, 2009
Filed:
Jun 17, 2009
Appl. No.:
12/486191
Inventors:
Zhihong Liu - Cupertino CA, US
Lifeng Wu - Fremont CA, US
Jeong Y. Choi - Palo Alto CA, US
Ping Chen - San Jose CA, US
Alvin I. Chen - San Jose CA, US
Gang Zhang - Campbell CA, US
International Classification:
G06F 17/50
G01R 31/26
US Classification:
703 13, 324719, 703 14
Abstract:
The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added. In an exemplary embodiment, only devices with minimum channel length have degraded models constructed. The present invention also allows the degradation of one device parameter to be determined based on an age value derived from another parameter. In yet another aspect, a degraded device is modeled as a fresh device with a voltage source connected to a terminal.

Hot Carrier Effect Simulation For Integrated Circuits

US Patent:
6278964, Aug 21, 2001
Filed:
May 29, 1998
Appl. No.:
9/087413
Inventors:
Jingkun Fang - Santa Clara CA
Hirokazu Yonezawa - Hyogo, JP
Lifeng Wu - Fremont CA
Yoshiyuki Kawakami - Osaka, JP
Nobufusa Iwanishi - Osaka, JP
Alvin I-Hsien Chen - Santa Clara CA
Norio Koike - Kyoto, JP
Ping Chen - Santa Clara CA
Zhihong Liu - Sunnyvale CA
Assignee:
Matsushita Electric Industrial Co., Ltd. - Osaka
BTA Technology Inc. - Santa Clara CA
International Classification:
G06F 1126
G05B 2302
US Classification:
703 19
Abstract:
An approach for simulating hot carrier effects in an integrated circuit (IC) at the circuit level includes generating a hot carrier library of delay data for each cell in the IC, using the hot carrier library data to generate a set of scaled timing data for the IC and using the scaled timing data with a IC performance simulator to simulate the IC operation. The scaled timing data is based upon the cell delay data and time-based switching activity of each cell in the IC.

Interactive Endoscopy For Intraoperative Virtual Annotation In Vats And Minimally Invasive Surgery

US Patent:
2022035, Nov 10, 2022
Filed:
Sep 11, 2020
Appl. No.:
17/641940
Inventors:
- EINDHOVEN, NL
Torre Michelle BYDLON - MELROSE MA, US
Alvin CHEN - CAMBRIDGE MA, US
William MCNAMARA - VALHALLA NY, US
International Classification:
G06V 20/70
G06V 10/44
G06T 7/73
G06T 7/00
G06T 7/13
G06T 7/246
G06V 10/764
G06T 7/30
G06T 11/00
A61B 1/00
Abstract:
A controller () for live annotation of interventional imagery includes a memory () that stores software instructions and a processor () that executes the software instructions. When executed by the processor (), the software instructions cause the controller () to implement a process that includes receiving (S) interventional imagery during an intraoperative intervention and automatically analyzing (S) the interventional imagery for detectable features. The process executed when the processor () executes the software instructions also includes detecting (S) a detectable feature and determining (S) at add an annotation to the interventional imagery for the detectable feature. The processor further includes identifying (S) a location for the annotation as an identified location in the interventional imagery and adding (S) the annotation to the interventional imagery at the identified location to correspond to the detectable feature. During the intraoperative intervention, a video is output (S) as video output based on interventional imagery and the annotation, including the annotation overlaid on the interventional imagery at the identified location.

Ultrasound-Based Device Localization

US Patent:
2022027, Sep 1, 2022
Filed:
Aug 12, 2020
Appl. No.:
17/634752
Inventors:
- EINDHOVEN, NL
Kunal VAIDYA - BOSTON MA, US
Molly Lara FLEXMAN - MELROSE MA, US
Alyssa TORJESEN - CHARLESTOWN MA, US
Ameet Kumar JAIN - BOSTON MA, US
Alvin CHEN - CAMBRIDGE MA, US
Shyam BHARAT - ARLINGTON MA, US
Ramon Quido ERKAMP - SWAMPSCOTT MA, US
International Classification:
A61B 8/00
A61B 8/08
Abstract:
A system for localizing a three-dimensional field of view of a beamforming ultrasound imaging probe based on a position indicator disposed within said field of view. The beamforming ultrasound imaging probe transmits and receives ultrasound signals within a three-dimensional field of view comprising a plurality of predetermined sub-volumes, each sub-volume being defined by a two dimensional array of beams. A controller causes the beamforming ultrasound imaging probe to scan the sub-volumes sequentially by transmitting and receiving ultrasound signals corresponding to each beam. A tracking system determines a position of the position indicator within the three-dimensional field of view; and determines a sub-volume in which the position indicator is located. The controller causes the beamforming ultrasound imaging probe to provide a localized field of view including the position of the position indicator by constraining the transmitting and receiving of ultrasound signals to a portion of the sub-volume in which the position indicator is located.

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