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Charles F Lutz, 801710 New Bedford Dr, Ruskin, FL 33573

Charles Lutz Phones & Addresses

1710 New Bedford Dr, Sun City Center, FL 33573   

1131 Emerald Dunes Dr, Sun City Center, FL 33573    813-6336066   

Sun City Ctr, FL   

308 State Route 286, Seabrook, NH 03874    603-4746964   

Madison, AL   

Sutton, MA   

Sun City Ctr, FL   

204 6Th Ave SW, Ruskin, FL 33570    754-4230326   

Work

Position: Service Occupations

Education

Degree: High school graduate or higher

Mentions for Charles F Lutz

Career records & work history

Lawyers & Attorneys

Charles Lutz Photo 1

Charles Lutz - Lawyer

Office:
Speck Philbin Attorneys A Professional Corporation
Specialties:
Real Estate Law, Probate Law, Trusts
ISLN:
905308805
Admitted:
1968
University:
University of Oklahoma, B.A., 1965
Law School:
University of Oklahoma, LL.B., 1968

Medicine Doctors

Charles J. Lutz

Specialties:
Thoracic Surgery, General Surgery
Work:
Upstate University Hospital Surgical Specialties
750 E Adams St STE 4835, Syracuse, NY 13210
315-4641800 (phone) 315-4646282 (fax)
Cardiac Surgery Assocs CntrlVascular Cardiac & Thoracic Surgeons Of CNY PLLC
104 Un Ave STE 1001, Syracuse, NY 13203
315-4237192 (phone) 315-4238013 (fax)
Site
Education:
Medical School
SUNY Upstate Medical University
Graduated: 1993
Procedures:
Thoracoscopy, Bariatric Surgery, Coronary Artery Bypass, Heart Valve Procedures, Pacemaker and Defibrillator Procedures, Septal Defect Repair, Thoracic Aortic Aneurysm Repair
Conditions:
Aortic Aneurism, Congenital Anomalies of the Heart, Overweight and Obesity, Thoracid Aortic Aneurysm
Languages:
Chinese, English
Description:
Dr. Lutz graduated from the SUNY Upstate Medical University in 1993. He works in Syracuse, NY and 1 other location and specializes in Thoracic Surgery and General Surgery. Dr. Lutz is affiliated with Crouse Hospital, St Josephs Hospital Health Center, Upstate University Hospital and Upstate University Hospital Community Campus.

Charles K. Lutz

Specialties:
Otolaryngology
Work:
ENT Head & Neck SpecialistsENT Head/Neck Specialists
985 Berkshire Blvd STE 101, Reading, PA 19610
610-3745599 (phone) 610-3751262 (fax)
Site
Education:
Medical School
Boston University School of Medicine
Graduated: 1984
Procedures:
Myringotomy and Tympanotomy, Rhinoplasty, Sinus Surgery, Tympanoplasty, Hearing Evaluation, Inner Ear Tests, Skull/Facial Bone Fractures and Dislocations, Tonsillectomy or Adenoidectomy, Tracheostomy
Conditions:
Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Benign Paroxysmal Positional Vertigo, Chronic Sinusitis, Deviated Nasal Septum, Hearing Loss, Obstructive Sleep Apnea, Otitis Media
Languages:
English
Description:
Dr. Lutz graduated from the Boston University School of Medicine in 1984. He works in Reading, PA and specializes in Otolaryngology. Dr. Lutz is affiliated with Penn State Health St Joseph Medical Center, Reading Hospital & Medical Center and Surgical Institute Of Reading.

Charles L. Lutz

Specialties:
Family Medicine, Internal Medicine
Work:
Robbins Medical Park
322 Mulberry St SW STE A, Lenoir, NC 28645
828-7576400 (phone) 828-7576424 (fax)
New Hope Medical Clinic
3670 S New Hope Rd STE 1, Gastonia, NC 28056
704-8244560 (phone) 704-4788194 (fax)
Robbins Medical Park Pulmonology
322 Mulberry St SW STE A, Lenoir, NC 28645
828-7576463 (phone) 828-7576424 (fax)
Education:
Medical School
Tulane University School of Medicine
Graduated: 1970
Procedures:
Arthrocentesis, Colonoscopy, Continuous EKG, Destruction of Benign/Premalignant Skin Lesions, Electrocardiogram (EKG or ECG), Sigmoidoscopy, Skin Tags Removal, Upper Gastrointestinal Endoscopy, Vaccine Administration
Conditions:
Acute Bronchitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Chronic Bronchitis, Constipation, Contact Dermatitis, Dermatitis, Gastrointestinal Hemorrhage, Herpes Zoster, Ischemic Heart Disease, Otitis Media, Urinary Tract Infection (UT), Abnormal Vaginal Bleeding, Acne, Acute Myocardial Infarction (AMI), Alzheimer's Disease, Anal Fissure, Anemia, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Atherosclerosis, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Benign Polyps of the Colon, Benign Prostatic Hypertrophy, Bronchial Asthma, Calculus of the Urinary System, Candidiasis, Candidiasis of Vulva and Vagina, Cardiac Arrhythmia, Cardiomyopathy, Cholelethiasis or Cholecystitis, Chronic Renal Disease, Cirrhosis, Conduction Disorders, Dehydration, Dementia, Depressive Disorders, Diabetes Mellitus (DM), Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Diverticulitis, Diverticulosis, Emphysema, Erectile Dysfunction (ED), Esophagitis, Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gout, Hearing Loss, Heart Failure, Hemorrhoids, Herpes Genitalis, Herpes Simplex, Hypertension (HTN), Hypoparathyroidism, Hypothyroidism, Infectious Liver Disease, Infectious Mononucleosis, Inflammatory Bowel Disease (IBD), Insomnia, Intervertebral Disc Degeneration, Intestinal Obstruction, Iron Deficiency Anemia, Irritable Bowel Syndrome (IBS), Ischemic Bowel Disease, Ischemic Stroke, Malignant Neoplasm of Colon, Menopausal and Postmenopausal Disorders, Migraine Headache, Non-Toxic Goiter, Obstructive Sleep Apnea, Osteoarthritis, Osteoporosis, Overweight and Obesity, Parkinson's Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Peptic Ulcer Disease, Peripheral Nerve Disorders, Plantar Warts, Pneumonia, Polycystic Ovarian Syndrome (PCOS), Prostatitis, Psoriasis, Pulmonary Embolism, Rectal, Abdomen, Small Intestines, or Colon Cancer, Restless Leg Syndrome, Rheumatoid Arthritis, Rosacea, Rotator Cuff Syndrome and Allied Disorders, Sciatica, Skin and Subcutaneous Infections, Spinal Stenosis, Substance Abuse and/or Dependency, Sunburn, Systemic Lupus Erythematosus, Tempromandibular Joint Disorders (TMJ), Tinea Pedis, Tinea Unguium, Urinary Incontinence, Varicose Veins, Venous Embolism and Thrombosis, Vitamin B12 Deficiency Anemia, Vitamin D Deficiency
Languages:
English, Spanish
Description:
Dr. Lutz graduated from the Tulane University School of Medicine in 1970. He works in Lenoir, NC and 2 other locations and specializes in Family Medicine and Internal Medicine. Dr. Lutz is affiliated with Caldwell Memorial Hospital.
Charles Lutz Photo 2

Charles James Lutz

Specialties:
General Practice
Surgery
Thoracic Surgery
Cardiothoracic Vascular Surgery
Adult Medicine
Education:
Upstate Medical University Physical Medicine and Rehabilitation (1993)

License Records

Charles Kevin Lutz

Licenses:
License #: MT015364T - Expired
Category: Medicine
Type: Graduate Medical Trainee

Charles R Lutz

Licenses:
License #: RS162022A - Expired
Category: Real Estate Commission
Type: Real Estate Salesperson-Standard

Charles Lutz resumes & CV records

Resumes

Charles Lutz Photo 40

Charles Lutz

Charles Lutz Photo 41

Charles Lutz

Location:
United States

Publications & IP owners

Us Patents

Bipolar Transistor With Graded Base Layer

US Patent:
6847060, Jan 25, 2005
Filed:
Apr 10, 2002
Appl. No.:
10/121444
Inventors:
Roger E. Welser - Providence RI, US
Paul M. Deluca - Providence RI, US
Charles R. Lutz - Seekonk MA, US
Kevin S. Stevens - Providence RI, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 310328
H01L 310336
H01L 31072
H01L 31109
H01L 3526
US Classification:
257197, 257191, 257198, 257200, 257201
Abstract:
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

Bipolar Transistor With Graded Base Layer

US Patent:
7115466, Oct 3, 2006
Filed:
Jan 20, 2005
Appl. No.:
11/039299
Inventors:
Roger E. Welser - Providence RI, US
Paul M. Deluca - Providence RI, US
Charles R. Lutz - Seekonk MA, US
Kevin S. Stevens - Providence RI, US
Noren Pan - Wilmette IL, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 21/8249
US Classification:
438235, 257197
Abstract:
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III–V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

Bipolar Transistor

US Patent:
7345327, Mar 18, 2008
Filed:
Oct 20, 2004
Appl. No.:
10/969804
Inventors:
Roger E. Welser - Providence RI, US
Paul M. DeLuca - Providence RI, US
Charles R. Lutz - Seekonk MA, US
Kevin S. Stevens - Providence RI, US
Noren Pan - Wilmette IL, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 29/73
US Classification:
257200, 257197, 257201, 257E29188, 257E29189
Abstract:
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

Bipolar Transistor With Enhanced Base Transport

US Patent:
7566948, Jul 28, 2009
Filed:
Oct 20, 2004
Appl. No.:
10/969762
Inventors:
Eric M. Rehder - Providence RI, US
Roger E. Welser - Providence RI, US
Charles R. Lutz - Seekonk MA, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 29/732
US Classification:
257592, 257E27055
Abstract:
A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerating field of the base layer includes on average, a relatively low p-doping level in a first region proximate to the collector and a relatively high p-doping level in a second region proximate to an emitter. Alternatively, the accelerating field can be derived from band gap grading, wherein the grade of band gap in the first region is greater than the grade of band gap in the second region, and the average band gap of the first region is lower than that of the second region.

Bipolar Transistor With Enhanced Base Transport

US Patent:
7872330, Jan 18, 2011
Filed:
Jun 24, 2009
Appl. No.:
12/490774
Inventors:
Eric M. Rehder - Providence RI, US
Roger E. Welser - Providence RI, US
Charles R. Lutz - Seekonk MA, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 29/732
US Classification:
257592, 257E2919
Abstract:
A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerating field of the base layer includes on average, a relatively low p-doping level in a first region proximate to the collector and a relatively high p-doping level in a second region proximate to an emitter. Alternatively, the accelerating field can be derived from band gap grading, wherein the grade of band gap in the first region is greater than the grade of band gap in the second region, and the average band gap of the first region is lower than that of the second region.

Bipolar High Electron Mobility Transistor And Methods Of Forming Same

US Patent:
2012032, Dec 27, 2012
Filed:
Jun 21, 2012
Appl. No.:
13/528937
Inventors:
Kevin S. Stevens - Providence RI, US
Charles R. Lutz - Seekonk MA, US
International Classification:
H01L 27/06
H01L 21/8248
US Classification:
257195, 438312, 257E27015, 257E21695
Abstract:
An epilayer structure includes a field-effect transistor structure and a heterojunction bipolar transistor structure. The heterojunction bipolar transistor structure contains an n-doped subcollector and a collector formed in combination with the field-effect transistor structure, wherein at least a portion of the subcollector or collector contains Sn, Te, or Se. In one embodiment, a base is formed over the collector; and an emitter is formed over the base. The bipolar transistor and the field-effect transistor each independently contain a III-V semiconductor material.

Isbn (Books And Publications)

Practical Genetics For Aquaculture

Author:
Charles Gregory Lutz
ISBN #:
0852382855

Newton'S Apple: Business Strategy, Pure And Simple

Author:
Charles Lutz
ISBN #:
0738827398

Christians And A Land Called Holy: How We Can Foster Justice, Peace, And Hope

Author:
Charles P. Lutz
ISBN #:
0800637844

You Mean I Have A Choice

Author:
Charles P. Lutz
ISBN #:
0806611316

Farming The Lord'S Land: Christian Perspectives On American Agriculture

Author:
Charles P. Lutz
ISBN #:
0806617853

Peaceways: 16 Christian Perspectives On Security In A Nuclear Age

Author:
Charles P. Lutz
ISBN #:
0806620064

Church Roots: Stories Of Nine Immigrant Groups That Became The American Lutheran Church

Author:
Charles P. Lutz
ISBN #:
0806621567

Abounding In Hope: A Family Of Faith At Work Through The Lutheran World Federation

Author:
Charles P. Lutz
ISBN #:
0806621583

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