Shih C Chen, 466020 Kingsmill Ter, Pleasanton, CA 94568

8592305, Nov 26, 2013

Nov 15, 2011

13/296715

Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Shih Chung Chen - Cupertino CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Mei Chang - Saratoga CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/4763

438649, 438683, 257E212

Provided are methods of providing aluminum-doped TaSifilms. Doping TaSifilms allows for the tuning of the work function value to make the TaSifilm better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSifilm with an aluminum-containing compound. Another method relates to depositing a TaSifilm, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSifilm using tantalum, aluminum and silicon precursors.

2012032, Dec 20, 2012

Jun 18, 2012

13/525604

Seshadri Ganguli - Sunnyvale CA, US
Xinliang Lu - Fremont CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Mei Chang - Saratoga CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/283

438585, 257E2119

Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.

2012032, Dec 20, 2012

Jun 18, 2012

13/525610

Seshadri Ganguli - Sunnyvale CA, US
Xinliang Lu - Fremont CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Mei Chang - Saratoga CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/28

438685, 257E21158

Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC.

2013029, Nov 7, 2013

Apr 18, 2013

13/865285

Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Yu Lei - Foster City CA, US
Xinyu Fu - Fremont CA, US
Wei Tang - Santa Clara CA, US
Srinivas Gandikota - Santa Clara CA, US

H01L 29/66

438591

Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

2014001, Jan 16, 2014

Jun 28, 2013

13/930194

Srinivas Gandikota - Santa Clara CA, US
Xinliang Lu - Fremont CA, US
Shih Chung Chen - Cupertino CA, US
Wei Tang - Santa Clara CA, US
Jing Zhou - Milpitas CA, US
Seshadri Ganguli - Sunnyvale CA, US
David Thompson - San Jose CA, US
Jeffrey W. Anthis - San Jose CA, US
Atif Noori - Saratoga CA, US
Faruk Gungor - San Jose CA, US
Dien-Yeh Wu - San Jose CA, US
Mei Chang - Saratoga CA, US
Xinyu Fu - Fremont CA, US
Yu Lei - Foster City CA, US

C23C 18/00

427343

Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl, TaCland HfClto provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)AlH], wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

4741873, May 3, 1988

Apr 15, 1986

6/852066

Mel J. Fischer - Alameda CA
Hollis O. Davis - Alameda CA
Shih Huei Chen - San Leandro CA

Kaiser Aerotech, a Division of Sowa & Sons - San Leandro CA

B29B 1116
B29C 5358

264 25

Rigidized composite preforms are fabricated by first serving individual reinforcement strands with a thread of a thermoplastic material. After shaping the reinforcement strands into a desired geometry, the shaped strands are heated to melt the thermoplastic threads. By then cooling the shaped reinforcement strands, the thermoplastic material solidifies and acts as an adhesive or glue in holding the preform together in a rigid fashion. Such rigid preforms are particularly suitable for handling, storage and transportation to other locations and media prior to densification. Densification may be performed by conventional techniques to produce the final composite article. Pyrolysis of the matrices and subsequent densification of the matrix may be accomplished.

2022036, Nov 17, 2022

Oct 8, 2021

17/497881

- Santa Clara CA, US
Yongjing Lin - San Jose CA, US
Satish Radhakrishnan - San Jose CA, US
Haoyan Sha - San Jose CA, US
Shih Chung Chen - Cupertino CA, US
Mario D. Silvetti - Fountain Hills AZ, US
Mandyam Sriram - San Jose CA, US
Vijay D. Parkhe - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/687
H01L 21/683
C23C 16/458
C23C 16/46

Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

2023000, Jan 5, 2023

Sep 9, 2022

17/941421

- Santa Clara CA, US
Yixiong Yang - Fremont CA, US
Yong Wu - Sunnyvale CA, US
Wei V. Tang - Santa Clara CA, US
Srinivas Gandikota - Santa Clara CA, US
Yongjing Lin - San Jose CA, US
Karla M Bernal Ramos - San Jose CA, US
Shih Chung Chen - Cupertino CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 27/11556
H01L 21/285
H01L 21/67
H01L 21/28
C23C 16/06
H01L 21/311
C23C 16/50
C23C 16/455
H01L 29/423

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).