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Debabrata GhoshUnion City, CA

Related to:
Arundhati S Ghosh 44 Ghosh A Sengupta 44

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Union City, CA   

Burlingame, CA   

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Career records & work history

Medicine Doctors

Debabrata Ghosh

Specialties:
Child Neurology, Neurology
Work:
Nationwide Childrens Hospital Neurology
700 Childrens Dr FL 5, Columbus, OH 43205
614-7224625 (phone) 614-7224633 (fax)
Education:
Medical School
Calcutta Med Coll, Calcutta Univ, Kolkata, West Bengal, India
Graduated: 1985
Procedures:
Neurological Testing
Conditions:
Dementia, Epilepsy, Meningitis, Parkinson's Disease, Peripheral Nerve Disorders, Restless Leg Syndrome
Languages:
Chinese, English, Spanish
Description:
Dr. Ghosh graduated from the Calcutta Med Coll, Calcutta Univ, Kolkata, West Bengal, India in 1985. He works in Columbus, OH and specializes in Child Neurology and Neurology. Dr. Ghosh is affiliated with Nationwide Childrens Hospital and OSU Harding Hospital.

Resumes & CV records

Resumes

Debabrata Ghosh Photo 32

Senior Manager, Data Scientist, Regulatory Research And Analytics

Location:
3756 Firpointe St, San Ramon, CA 94582
Industry:
Utilities
Work:
Pacific Gas and Electric Company 2003 - 2011
Manager, Market and Credit Risk Management Pacific Gas and Electric Company 2003 - 2011
Senior Manager, Data Scientist, Regulatory Research and Analytics Sun Microsystems 2001 - 2003
Business Delivery Consultant | Solution Architect Fortuna Technologies 1998 - 2001
Consultant | Data Warehouse Architect | Business Architect Tech Mahindra 1995 - 1998
Senior Software Engineer Jenson & Nicholson (I) Ltd 1993 - 1995
Senior Programmer Analyst
Education:
Jadavpur University, India 1990 - 1993
Master of Science, Masters, Computer Application Jadavpur University
Skills:
Risk Management, Business Process Improvement, Change Management, Data Warehousing, Project Management, Business Intelligence, Data Modeling, Requirements Gathering, Solution Architecture, Data Warehouse Architecture, Business Strategy, Business Solution Delivery, Program Management, Business Architecture, Business Analysis, It Strategy, It Solutions, Sdlc, Smart Grid, Customer Analysis, Big Data, Data Analysis, Teradata, Oracle, Informatica, Business Objects, Microstrategy, Smart Metering, Sas, Etl, Sql, Analytical Skills, Analysis, Data Integration, Software Development Life Cycle, Business Transformation, Data Analytics, Master Data Management, Information Technology, Integration, Product Management, Customer Experience, Customer Insight, Renewable Energy, Research and Development, Data Migration, Engineering, Digital Strategy, Strategic Planning, Contract Management, Solar Energy, Hadoop, Amazon Web Services, Python, Tableau, R, Leadership, Stakeholder Management, Product Strategy, Data Governance, Big Data Analytics, Demand Forecasting, Revenue Forecasting, Predictive Analytics, Risk Analytics, Marketing Analytics, Data Engineering
Interests:
Social Services
Cooking
Collecting Antiques
Electronics
Traveling
Home Improvement
International Traavel
Reading
The Arts
Travel
Collecting
Home Decoration
Languages:
English
Debabrata Ghosh Photo 33

Debabrata Ghosh

Debabrata Ghosh Photo 34

Debabrata Ghosh

Debabrata Ghosh Photo 35

Debabrata Ghosh

Location:
United States
Debabrata Ghosh Photo 36

Debabrata Ghosh

Location:
United States

Publications & IP owners

Us Patents

Alternate Steps Of Imp And Sputtering Process To Improve Sidewall Coverage

US Patent:
6350353, Feb 26, 2002
Filed:
Nov 24, 1999
Appl. No.:
09/449202
Inventors:
Praburam Gopalraja - Sunnyvale CA
Sergio Edelstein - Los Gatos CA
Avi Tepman - Cupertino CA
Peijun Ding - San Jose CA
Debabrata Ghosh - San Jose CA
Nirmalya Maity - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
2041923, 20429808, 20429806, 20419212, 20419232, 20429813
Abstract:
The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

Integrated Electrodeposition And Chemical Mechanical Polishing Tool

US Patent:
6352467, Mar 5, 2002
Filed:
Jun 8, 2000
Appl. No.:
09/591186
Inventors:
Sasson Somekh - Los Altos Hills CA
Debabrata Ghosh - San Jose CA
Bret W. Adams - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B24B 100
US Classification:
451 28, 451 41, 451288, 438687
Abstract:
A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Alternate Steps Of Imp And Sputtering Process To Improve Sidewall Coverage

US Patent:
2002008, Jul 4, 2002
Filed:
Nov 7, 2001
Appl. No.:
10/037172
Inventors:
Praburam Gopalraja - Sunnyvale CA, US
Sergio Edelstein - Los Gatos CA, US
Avi Tepman - Cupertino CA, US
Peijun Ding - San Jose CA, US
Debabrata Ghosh - San Jose CA, US
Nirmalya Maity - Sunnyvale CA, US
Assignee:
Applied Materials, Inc.
International Classification:
C23C014/35
C23C014/44
US Classification:
204/192120, 204/192300, 204/298080, 204/298060, 204/298160, 204/298110
Abstract:
The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

Integrated Electrodeposition And Chemical-Mechanical Polishing Tool

US Patent:
6110011, Aug 29, 2000
Filed:
Nov 10, 1997
Appl. No.:
8/966939
Inventors:
Sasson Somekh - Los Altos Hills CA
Debabrata Ghosh - San Jose CA
Bret W. Adams - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B24B 722
US Classification:
451 28
Abstract:
A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Pedestal Insulator For A Pre-Clean Chamber

US Patent:
6077353, Jun 20, 2000
Filed:
Jun 2, 1998
Appl. No.:
9/088759
Inventors:
Mohamed A. Al-Sharif - San Jose CA
Bradley O. Stimson - San Jose CA
Debabrata Ghosh - San Jose CA
Barney M. Cohen - Santa Clara CA
Kenny King-Tai Ngan - Fremont CA
Murali Narasimhan - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B05C 1302
US Classification:
118500
Abstract:
The invention generally provides an apparatus that reduces backside sputtering of the substrate in a pre-clean chamber and other etch chambers. The invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit. One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.

Isbn (Books And Publications)

Perspectives In Reproductive Health

Author:
Debabrata Ghosh
ISBN #:
8122409040

Possible Relatives

Debalina Ghosh  Debashis Ghosh  Debashish Ghosh  Debjani Ghosh  Debaprasad J Ghosh  Debraj Ghosh  Deepak Ghosh  Debabrata Biswas 

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