Dominic A Schepis9707 Mountain View Rd, Scottsdale, AZ 85258

6395587, May 28, 2002

Feb 11, 2000

09/502809

Scott Crowder - Ossining NY
Dominic J. Schepis - Wappingers Falls NY
Melanie J. Sherony - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 2100

438149, 438144

A semiconductor device having a silicon-on-insulator (SOI) structure includes a field-effect transistor having amorphized source and drain regions formed by implanting silicon or germanium ions into a silicon layer formed over a buried insulator. The fully amorphized source and drain regions ultimately result in permanent crystalline defects that cause p-n junction leakage which allows charge in the body of the device to dissipate, thereby improving the overall efficiency and performance of the device. The source and drain regions are amorphized throughout their entire thickness to prevent single crystal re-crystallization from occurring during annealing and other subsequent processing steps that can degrade the quality of the p-n leakage junctions.

2017017, Jun 15, 2017

Dec 14, 2015

14/967914

- Armonk NY, US
Min Dai - Mahwah NJ, US
Dominic J. Schepis - Wappingers Falls NY, US
Shahab Siddiqui - Somers NY, US

H01L 21/8238
H01L 27/092
H01L 29/51
H01L 21/28

A method of manufacturing a semiconductor structure, and the resultant structure. The method includes forming an oxide layer above a substrate. The method includes forming a metal layer above the oxide layer. The method includes forming a first capping layer above the metal layer. A material forming the first capping layer may be titanium oxide, or titanium oxynitride. The method includes annealing the semiconductor structure. Annealing the semiconductor structure may result in diffusing a metal from the metal layer into the oxide layer.