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Erica M Chen, 35Newark, CA

Known as:
Eric A Chen
Related to:
Harry H Chan 49 Ui Hwan Choi 58

Erica Chen Phones & Addresses

Newark, CA   

Ann Arbor, MI   

Bakersfield, CA   

Alameda, CA   

Languages

English
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Mentions for Erica M Chen

Career records & work history

Medicine Doctors

Erica Chen Photo 1

Erica Chen, Fremont CA

Specialties:
Social Work
Address:
3300 Capitol Ave Suite B, Fremont, CA 94538
510-5742050 (Phone) 510-5742054 (Fax)
Languages:
English

Resumes & CV records

Resumes

Erica Chen Photo 44

Account Manager At King And Partners

Position:
Account Manager at KING AND PARTNERS (Sole Proprietorship)
Location:
New York, New York
Industry:
Marketing and Advertising
Work:
KING AND PARTNERS - New York, New York since Nov 2012
Account Manager UPG - New York, New York Sep 2012 - Nov 2012
Marketing Assistant AR New York - New York, New York May 2011 - Aug 2011
Account Management Intern Halpern - London, United Kingdom Jan 2011 - Apr 2011
Fashion & Style Intern Studio Lekker - New York, New York May 2010 - Aug 2010
Intern
Education:
Indiana University - Kelley School of Business 2008 - 2012
Bachelor of Science, Business; Marketing City University London 2011 - 2011
Erica Chen Photo 45

Process Engineer In Direct Metals

Location:
Hillsboro, OR
Industry:
Research
Work:
Lam Research
Process Engineer In Direct Metals University of Michigan Aug 2011 - Apr 2017
Graduate Student Research Assistant, Ph.d Candidate Ucla Sep 2009 - May 2011
Undergraduate Researcher Wayne State University Jun 2009 - Aug 2009
Chemistry Intern
Education:
University of Michigan College of Engineering 2011 - 2016
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy University of Michigan College of Engineering 2013 - 2015
Masters, Materials Science, Engineering University of California, Los Angeles 2007 - 2011
Bachelors, Bachelor of Science, Materials Science, Engineering
Skills:
Lithium Ion Batteries, Powder X Ray Diffraction, Electrochemistry, Characterization, Sem, Xps, Thermal Analysis, Electron Transport Analysis, Scanning Electron Microscopy, Matlab, Microscopy, Spectroscopy, Nanomaterials, Research, Materials Science, Nanotechnology, Chemistry, Data Analysis, Microsoft Office, Electrode Materials Testing, Root Cause Analysis, Battery Fabrication Techniques, Strategic Planning, Laboratory, Jmp
Interests:
Cooking
Economic Empowerment
Environment
Education
Baking
Cycling
Reading
New Technologies
Hiking
Science and Technology
Golf
Languages:
English
Mandarin
Japanese
Erica Chen Photo 46

Erica Chen

Erica Chen Photo 47

Erica Chen

Publications & IP owners

Us Patents

Methods And Apparatus For Processing A Substrate

US Patent:
2022029, Sep 22, 2022
Filed:
Mar 22, 2021
Appl. No.:
17/208735
Inventors:
- Santa Clara CA, US
Joshua Alan RUBNITZ - Monte Sereno CA, US
Bhargav Sridhar CITLA - Fremont CA, US
Srinivas D. NEMANI - Saratoga CA, US
Erica CHEN - Santa Clara CA, US
Nikolaos BEKIARIS - Campbell CA, US
Jethro TANNOS - San Jose CA, US
Ellie YIEH - San Jose CA, US
International Classification:
C23C 16/455
C23C 16/515
C23C 16/505
C23C 16/52
C23C 16/458
Abstract:
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHfilm onto a substrate supported on the substrate support.

Methods And Apparatus For Processing A Substrate

US Patent:
2022030, Sep 22, 2022
Filed:
Mar 22, 2021
Appl. No.:
17/208719
Inventors:
- Santa Clara CA, US
Bhargav Sridhar CITLA - Fremont CA, US
Srinivas D. NEMANI - Saratoga CA, US
Ellie YIEH - San Jose CA, US
Joshua Alan RUBNITZ - Monte Sereno CA, US
Erica CHEN - Santa Clara CA, US
Soham Sunjay ASRANI - San Jose CA, US
Nikolaos BEKIARIS - Campbell CA, US
International Classification:
H01L 21/02
H01J 37/32
C23C 16/505
C23C 16/52
C23C 16/40
C23C 16/56
C23C 16/458
Abstract:
Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHfilm to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

Gap Fill Deposition Process

US Patent:
2021011, Apr 15, 2021
Filed:
Oct 15, 2019
Appl. No.:
16/653601
Inventors:
- Santa Clara CA, US
Nikolaos BEKIARIS - Campbell CA, US
Erica CHEN - Cupertino CA, US
Mehul B. NAIK - San Jose CA, US
International Classification:
H01L 21/768
H01L 21/762
H01L 21/285
H01L 21/3213
H01L 21/30
H01L 21/324
H01L 21/02
Abstract:
Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.

Methods For Gapfill In High Aspect Ratio Structures

US Patent:
2021002, Jan 28, 2021
Filed:
Oct 13, 2020
Appl. No.:
17/069195
Inventors:
- Santa Clara CA, US
Ludovic Godet - Sunnyvale CA, US
Rui Cheng - Santa Clara CA, US
Erica Chen - Cupertino CA, US
Ziqing Duan - San Jose CA, US
Abhijit Basu Mallick - Palo Alto CA, US
Srinivas Gandikota - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/762
H01L 21/02
H01L 21/768
H01L 23/31
H01L 29/06
Abstract:
Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

Wafer Treatment For Achieving Defect-Free Self-Assembled Monolayers

US Patent:
2020040, Dec 24, 2020
Filed:
Sep 8, 2020
Appl. No.:
17/014975
Inventors:
- Santa Clara CA, US
Lei Zhou - San Jose CA, US
Biao Liu - San Jose CA, US
Cheng Pan - San Jose CA, US
Yuanhong Guo - San Jose CA, US
Liqi Wu - San Jose CA, US
Michael S. Jackson - Sunnyvale CA, US
Ludovic Godet - Sunnyvale CA, US
Tobin Kaufman-Osborn - Sunnyvale CA, US
Erica Chen - Cupertino CA, US
Paul F. Ma - Santa Clara CA, US
International Classification:
H01L 21/027
H01L 21/02
H01L 21/67
H01L 21/3105
Abstract:
Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Methods For Graphene Formation

US Patent:
2020010, Apr 2, 2020
Filed:
Sep 27, 2019
Appl. No.:
16/585929
Inventors:
- Santa Clara CA, US
Erica Chen - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Chentsau Chris Ying - Cupertino CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Ellie Y. Yieh - San Jose CA, US
International Classification:
H01L 21/02
C23C 16/26
C23C 16/02
Abstract:
A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

Residual Removal

US Patent:
2019039, Dec 26, 2019
Filed:
May 2, 2019
Appl. No.:
16/401883
Inventors:
- Santa Clara CA, US
Biao LIU - San Jose CA, US
Cheng PAN - San Jose CA, US
Erica CHEN - Cupertino CA, US
Chentsau YING - Cupertino CA, US
Srinivas NEMANI - Sunnyvale CA, US
Ellie YIEH - San Jose CA, US
International Classification:
H01L 21/02
H01L 21/3105
H01L 21/311
Abstract:
Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

Methods For Gapfill In High Aspect Ratio Structures

US Patent:
2019015, May 23, 2019
Filed:
Jan 28, 2019
Appl. No.:
16/259175
Inventors:
- Santa Clara CA, US
Ludovic Godet - Sunnyvale CA, US
Rui Cheng - Santa Clara CA, US
Erica Chen - Cupertino CA, US
Ziqing Duan - San Jose CA, US
Abhijit Basu Mallick - Palo Alto CA, US
Srinivas Gandikota - Santa Clara CA, US
International Classification:
H01L 21/762
H01L 21/02
H01L 23/31
H01L 21/768
H01L 29/06
Abstract:
Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

Possible Relatives

Cynthia Chen  David Chen  Cyril X Chen  Cyrus Y Chen  Dawei W Chen  De T Chen  Dafang Chen  Erica S Johnson  Erica D Johnston  Erica N White 

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