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Fang X Shi, 61109 Almansor St, Alhambra, CA 91801

Known as:
Fang Xiong Shi

Fang Shi Phones & Addresses

109 Almansor St, Alhambra, CA 91801    626-2892545   

109 S Almansor St #46, Alhambra, CA 91801    626-2892545   

Rancho Cucamonga, CA   

Baldwin Park, CA   

Dallas, TX   

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Mentions for Fang X Shi

Career records & work history

Medicine Doctors

Fang F. Shi

Specialties:
Family Medicine
Work:
Henry Ford Medical GroupHenry Ford Medical Center Novi
39450 W 12 Mile Rd, Novi, MI 48377
248-6617920 (phone) 248-3440720 (fax)
Site
Education:
Medical School
Lanzhou Med Coll, Lanzhou City, Gansu, China
Graduated: 1982
Languages:
English
Description:
Dr. Shi graduated from the Lanzhou Med Coll, Lanzhou City, Gansu, China in 1982. She works in Novi, MI and specializes in Family Medicine. Dr. Shi is affiliated with Henry Ford West Bloomfield Hospital.

Fang Shi resumes & CV records

Resumes

Fang Shi Photo 25

General Manager

Industry:
Think Tanks
Work:
Sslt Head Counting Company
General Manager
Skills:
Microsoft Office, Management, Project Management, Strategic Planning, Customer Service, Marketing, Leadership, Research, Microsoft Excel, Public Speaking
Fang Shi Photo 26

Assistant

Industry:
Civil Engineering
Work:
East Ocean Group
Assistant

Publications & IP owners

Us Patents

Low Temperature Fabrication Of Discrete Silicon-Containing Substrates And Devices

US Patent:
2007026, Nov 15, 2007
Filed:
Apr 19, 2007
Appl. No.:
11/788227
Inventors:
Meng Tao - Colleyville TX, US
Fang Shi - Boise ID, US
Assignee:
BOARD OF REGENTS, UNIVERSITY OF TEXAS SYSTEM - Austin TX
International Classification:
H01L 29/78
H01L 21/20
H01L 21/336
US Classification:
257288000, 438197000, 438478000, 257E21090, 257E29255, 257E21409
Abstract:
Fabrication methods and processes are described, the methods and processes occurring at a low-temperature and involving passivation. The methods and processes easily incorporate annealing, deposition, patterning, lithography, etching, oxidation, epitaxy and chemical mechanical polishing for forming suitable devices, such as diodes and MOSFETs. Such fabrication is a suitable and more cost-effective alternative to a process of diffusion or doping, typical for forming p-n junctions. The process flow does not require temperatures above 700 degrees Centigrade. Formation of p-n junctions in discrete silicon diodes and MOSFETs are also provided, fabricated at low temperatures in the absence of diffusion or doping.

Possible Relatives

Debbie Shi  Danhong S Shi  Daniel Z Shi  Feng X Shi  Frank F Shi  Gary R Shi  Guo X Shi  Fang G Lee  Fang Li  Fang M Peng 

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