Career records & work history
Lawyers & Attorneys
Fen Wei Chen, 55728 47Th St, Brooklyn, NY 11220
Fen Chen Phones & Addresses
728 47Th St, Brooklyn, NY 11220 917-2915675
645 53Rd St, Brooklyn, NY 11220 646-2263101
557 53Rd St, Brooklyn, NY 11220
733 53Rd St #1A, Brooklyn, NY 11220
745 53Rd St, Brooklyn, NY 11220
Staten Island, NY
115 Eldridge St, New York, NY 10002
539 Wales Ave APT 3, Bronx, NY 10455 718-2923441
539 Wales Ave, Bronx, NY 10455
Baltimore, MD
Mentions for Fen Wei Chen
Fen Chen resumes & CV records
Resumes
Military Police
Location:
New York, NY
Industry:
Automotive
Work:
82Nd 3Rd Bct Bstb Hhc
2008 - 2013
Military Police
Military Police
Education:
Charles Stuart School of Diamond Setting 2016 - 2017
New York Automotive and Diesel Institute 2014 - 2015
New York Automotive and Diesel Institute 2014 - 2014
New York Automotive and Diesel Institute 2014 - 2015
New York Automotive and Diesel Institute 2014 - 2014
Skills:
Management, Military Experience, Team Leadership, Policy, Customer Service, Security Clearance, Military Operations
Languages:
Mandarin
Supply Technician
Location:
Brooklyn, NY
Industry:
Military
Work:
U.s Army Corps of Enginners New York District
Supply Technician Us Army Active Duty Sep 2007 - Apr 2011
Supply Specialist and Unit Armorer U.s. Army Reserve Sep 2007 - Apr 2011
Supply Sergeant
Supply Technician Us Army Active Duty Sep 2007 - Apr 2011
Supply Specialist and Unit Armorer U.s. Army Reserve Sep 2007 - Apr 2011
Supply Sergeant
Education:
New York Automotive and Diesel Institute 2014 - 2015
University of Oklahoma 2007 - 2011
Bachelors
University of Oklahoma 2007 - 2011
Bachelors
Skills:
Logistics, Supply Chain Management, Cultural Awareness, Chinese Culture, Analytics, Fitness, Convincing People, Poker
Languages:
English
Founder And Chief Executive Officer
Location:
Albany, NY
Industry:
Food Production
Work:
Mad Dumplings
Founder and Chief Executive Officer J.p. Morgan Nov 2014 - Mar 2016
Relationship Banker Citi Nov 2011 - Oct 2014
Customer Service Representative and Internal Communications Queens Chronicle Sep 2011 - Nov 2011
Reporter Thecelebritycafe.com Feb 2011 - Sep 2011
Reporter Bleacher Report Jun 2010 - Jan 2011
Reporting and Editing Intern Frank Capri Photography Jun 2009 - Sep 2009
Public Relations
Founder and Chief Executive Officer J.p. Morgan Nov 2014 - Mar 2016
Relationship Banker Citi Nov 2011 - Oct 2014
Customer Service Representative and Internal Communications Queens Chronicle Sep 2011 - Nov 2011
Reporter Thecelebritycafe.com Feb 2011 - Sep 2011
Reporter Bleacher Report Jun 2010 - Jan 2011
Reporting and Editing Intern Frank Capri Photography Jun 2009 - Sep 2009
Public Relations
Education:
University at Albany, Suny 2006 - 2011
Bachelors, Journalism
Bachelors, Journalism
Skills:
Quark and Quarkxpress, Microsoft Word, Microsoft Excel, Bilingual Chinese and English, Microsoft Access, Twitter, Facebook, Facebook Marketing, Wordpress, Reporting, Writing, Creative Writing, Editing, Ap Style, Microsoft Outlook, Blogging
Fen Chen
Location:
Brooklyn, NY
Industry:
Accounting
Work:
Aa
Aa
Aa
Fen Chen
Fen Chen
Fen Chen
Location:
United States
Fen Chen
Location:
United States
Publications & IP owners
Us Patents
3D Via Capacitor With A Floating Conductive Plate For Improved Reliability
US Patent:
2013016, Jun 27, 2013
Filed:
Feb 21, 2013
Appl. No.:
13/772493
Inventors:
International Business Machines Corporation - Armonk NY, US
Fen Chen - Williston VT, US
Baozhen Li - South Burlington VT, US
Fen Chen - Williston VT, US
Baozhen Li - South Burlington VT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 49/02
US Classification:
257532
Abstract:
The present invention provides a 3D via capacitor and a method for forming the same. The capacitor includes an insulating layer on a substrate. The insulating layer has a via having sidewalls and a bottom. A first electrode overlies the sidewalls and at least a portion of the bottom of the via. A first high-k dielectric material layer overlies the first electrode. A first conductive plate is over the first high-k dielectric material layer. A second high-k dielectric material layer overlies the first conductive plate and leaves a remaining portion of the via unfilled. A second electrode is formed in the remaining portion of the via. The first conductive plate is substantially parallel to the first electrode and is not in contact with the first and second electrodes. An array of such 3D via capacitors is also provided.
Possible Relatives
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